Nano Select,
Journal Year:
2024,
Volume and Issue:
5(9)
Published: May 5, 2024
Abstract
The
primary
aim
of
this
work
is
to
investigate
the
use
iron
di‐silicide
(FeSi
2
)
as
a
photoactive
layer
in
order
achieve
superior
performance
solar
cell
architecture—ITO/TiO
/FeSi
/CuSCN/Ni.
optimum
thickness
absorber
was
found
be
1000
nm,
which
gave
optimal
properties
proposed
cell—a
short‐circuit
current
density
(
J
sc
51.41
mAm
−2
,
an
open‐circuit
voltage
V
oc
0.93
V,
fill
factor
(FF)
77.99%,
and
power
conversion
efficiency
(PCE)
37.17%.
introduction
ultrathin
interfacial
between
electron
transport
(ETL),
perovskite
interface,
hole
(HTL)
enhanced
electrical
output
cell.
increased
51.86
mAcm
rose
0.97
while
FF
PCE
82.86%
41.84%,
respectively.
Accordingly,
architecture
promising
can
introduced
into
manufacturing
workflow
for
commercial
applications.
Moreover,
because
its
exceptional
photon
absorption
capabilities,
FeSi
potentially
excellent
material
fabrication.
detailed
findings
study
have
therefore
indicated
that
high‐performance
‐based
achieved
future.
Nano Select,
Journal Year:
2023,
Volume and Issue:
4(11-12), P. 632 - 645
Published: Sept. 10, 2023
Abstract
The
remarkable
structural,
optical,
and
electronic
characteristics
of
inorganic
perovskite
materials
have
generated
significant
enthusiasm
within
the
field
solar
technology.
material
Ca
3
PI
belongs
to
same
category
as
metal
halide
perovskites.
This
research
utilized
first‐principles
density
functional
theory
(FP‐DFT)
examine
how
optical
are
impacted
by
strain.
To
accurately
determine
band
arrangement,
we
incorporated
relativistic
spin‐orbit
coupling
(SOC)
effect
into
our
calculations.
planar
molecule
has
a
direct
bandgap
1.582
eV
(PBE)
at
its
Г(gamma)‐point,
but
while
SOC
is
included,
decreases
1.329
eV.
Under
compressive
strain,
all
structures
decreases,
whereas
under
tensile
it
increases.
,
including
dielectric
function,
absorption
coefficient,
electron
loss
indicate
strong
capabilities
in
visible
range,
driven
properties.
Besides,
photon
energy
spectrum
displays
red‐shift
(blue‐shift)
coefficient
function
with
increasing
amounts
(tensile)
Therefore,
study
strain‐induced
bears
valuable
implications
for
potential
use
design
cells
optoelectronic
devices.
Results in Physics,
Journal Year:
2024,
Volume and Issue:
61, P. 107751 - 107751
Published: May 11, 2024
Perovskite
materials
are
getting
attention
day
by
due
to
their
numerous
optoelectronic
properties.
Lead
perovskites
well-known
for
various
applications
in
photovoltaic
devices
non-toxicity
which
has
no
impacts
on
both
the
environment
and
health.
Cs2PtI6,
a
lead-free
halide
perovskite,
is
renowned
its
broad-spectrum
light
absorption
remarkably
high
coefficient.
Its
stability
under
ambient
conditions
surpasses
that
of
other
perovskites,
rendering
it
exceptionally
appealing
The
device
configuration
with
FTO/ETL/Cs2PtI6/HTL/Au
used
this
study
where
4
different
ETLs
10
HTLs
investigate
best
configuration.
impact
parameters
like
thickness,
acceptor
density,
donor
defect
density
optimized
attain
efficient
SCAPS-1D
simulator
perform
numerical
analysis
intensity
AM
1.5
spectrum
(100
mW/cm2).
After
optimization
parameters,
configured
FTO/SnS2/Cs2PtI6/MoTe2/Au
shows
performance
among
four
PCE
32.98
%,
VOC
1.11
V,
JSC
33.19
mA/cm2,
FF
88.89
%.
This
suggested
Cs2PtI6-based
perovskite
solar
cells
demonstrate
superior
compared
lead
perovskite-based
cells,
highlighting
Cs2PtI6
as
promising
alternative
while
mitigating
toxicity
concerns.
Nano Select,
Journal Year:
2024,
Volume and Issue:
5(9)
Published: May 5, 2024
Abstract
The
primary
aim
of
this
work
is
to
investigate
the
use
iron
di‐silicide
(FeSi
2
)
as
a
photoactive
layer
in
order
achieve
superior
performance
solar
cell
architecture—ITO/TiO
/FeSi
/CuSCN/Ni.
optimum
thickness
absorber
was
found
be
1000
nm,
which
gave
optimal
properties
proposed
cell—a
short‐circuit
current
density
(
J
sc
51.41
mAm
−2
,
an
open‐circuit
voltage
V
oc
0.93
V,
fill
factor
(FF)
77.99%,
and
power
conversion
efficiency
(PCE)
37.17%.
introduction
ultrathin
interfacial
between
electron
transport
(ETL),
perovskite
interface,
hole
(HTL)
enhanced
electrical
output
cell.
increased
51.86
mAcm
rose
0.97
while
FF
PCE
82.86%
41.84%,
respectively.
Accordingly,
architecture
promising
can
introduced
into
manufacturing
workflow
for
commercial
applications.
Moreover,
because
its
exceptional
photon
absorption
capabilities,
FeSi
potentially
excellent
material
fabrication.
detailed
findings
study
have
therefore
indicated
that
high‐performance
‐based
achieved
future.
