A Review of Deep-Red (650–700 nm)-Emitting Semiconductor Nanocrystals DOI Creative Commons

Geyu Jin,

Fangze Liu, Jing Wei

et al.

Crystals, Journal Year: 2024, Volume and Issue: 14(9), P. 788 - 788

Published: Sept. 5, 2024

Deep-red light has significant application value in various fields, including biomedicine, plant cultivation, and displays. The development of high-efficiency deep-red luminescent materials is therefore great importance. Semiconductor nanocrystals have been extensively studied as novel due to their wavelength tunability, narrow emission linewidth, high luminescence efficiency. However, the advancement lagged behind that red, green, blue nanocrystals, primarily material selection limitations. This review summarizes recent progress synthesis based on composition, II-VI, III-V, I-III-VI, perovskite nanocrystals.

Language: Английский

Defects Passivation Engineering of Chalcogenide Quantum Dots via In-Situ Fluorination Treatment DOI
Zhe Sun,

Jiahua Kong,

Qinggang Hou

et al.

Nanoscale, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Efficient carrier transport through reducing the traps in chalcogenide quantum dots (QDs) is crucial for their application optoelectronic devices.

Language: Английский

Citations

0
Shell Composition-Mediated Band Alignment and Defect Engineering in Indium Phosphide-Based Core/Shell Quantum Dots DOI

Qinggang Hou,

Yixiao Huang,

Jiahua Kong

et al.

The Journal of Physical Chemistry C, Journal Year: 2025, Volume and Issue: unknown

Published: March 28, 2025

Realization of a suitable energy band structure core–shell-structured indium phosphide (InP)-based quantum dots (QDs) is crucial for their anticipated use in various optoelectronic devices. In this study, we demonstrate how to achieve the optimal alignment and defect engineering InP core/Zn1–xCdxSe shell QDs by systematically varying composition. Using advanced spectroscopic techniques, show alloyed Zn1–xCdxSe reduces surface defects while simultaneously tuning charge carrier wave functions from localization delocalization mode due shift type-I quasi-type-II. These InP-based core/shell also exhibit outstanding stability under high-energy ultraviolet irradiation thermal treatment, as well long-term storage stability, which essential device applications. Furthermore, studies using floating gate transistors based on synergistic influence injection spontaneous recovery trapped charges.

Language: Английский

Citations

0
A comprehensive review on the lifetime of cadmium-free quantum-dot light-emitting diodes DOI Creative Commons
Hansol Seo, Ganghyun Park, Beomsoo Chun

et al.

Journal of Information Display, Journal Year: 2025, Volume and Issue: unknown, P. 1 - 17

Published: May 14, 2025

Language: Английский

Citations

0
Advancing Ecofriendly Indium Phosphide Quantum Dots: Comprehensive Strategies toward Color-Pure Luminescence for Wide Color Gamut Displays DOI
Jie Zhao, Rui Jiang,

Ming-De Huang

et al.

ACS Energy Letters, Journal Year: 2025, Volume and Issue: unknown, P. 2096 - 2132

Published: April 4, 2025

Language: Английский

Citations

0
A Review of Deep-Red (650–700 nm)-Emitting Semiconductor Nanocrystals DOI Creative Commons

Geyu Jin,

Fangze Liu, Jing Wei

et al.

Crystals, Journal Year: 2024, Volume and Issue: 14(9), P. 788 - 788

Published: Sept. 5, 2024

Deep-red light has significant application value in various fields, including biomedicine, plant cultivation, and displays. The development of high-efficiency deep-red luminescent materials is therefore great importance. Semiconductor nanocrystals have been extensively studied as novel due to their wavelength tunability, narrow emission linewidth, high luminescence efficiency. However, the advancement lagged behind that red, green, blue nanocrystals, primarily material selection limitations. This review summarizes recent progress synthesis based on composition, II-VI, III-V, I-III-VI, perovskite nanocrystals.

Language: Английский

Citations

0