Observation of electronic and structural transitions in two-dimensional ferroelastic semiconductor of Nb2GeTe4 via pressure manipulation

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(11)

Published: March 1, 2025

Nb2GeTe4, a two-dimensional ferroelastic semiconductor, has garnered intense research interest due to its nontrivial physicochemical characteristics of high carrier mobility as well extraordinary ferroelasticity and optical absorbance along with potential applications in electronic optoelectronic devices. In this work, the high-pressure structural, vibrational, electrical transport properties Nb2GeTe4 up 60.0 GPa under different hydrostatic environments were systematically studied by Raman spectroscopy, conductivity, first-principles theoretical calculations. Under non-hydrostatic compression, experienced metallization at 11.8 originating from closure bandgap considerable compression interlayer distance sequential an isostructural phase transition (IPT) 26.5 GPa. The comparable pressure pronounced delay IPT ∼4.0 condition can be reasonably interpreted influence deviatoric stress. Upon decompression, was demonstrated reversible possible structural destruction environments. Moreover, underwent Ohmic-to-super-Ohmic conversion 1000 mV pressure, which presumably caused higher sinusoidal voltage than thermal voltage. These findings enrich our foundational comprehension on thereby fostering

Language: Английский

Pressure- and temperature-induced phase transition in the semiconductor SnS

Physical review. B./Physical review. B, Journal Year: 2025, Volume and Issue: 111(17)

Published: May 14, 2025

Language: Английский