The nature of photocatalytic hydrogen generation on silicon nanowires prepared by MAWC DOI
Tingsen Ming,

Xiuzhi Hu,

Zhaohao Wang

et al.

International Journal of Hydrogen Energy, Journal Year: 2024, Volume and Issue: 71, P. 42 - 47

Published: May 20, 2024

Language: Английский

Perovskites and their constructed near-infrared photodetectors DOI

Wenhuan Gao,

Cong Chen

Nano Energy, Journal Year: 2024, Volume and Issue: 128, P. 109904 - 109904

Published: June 22, 2024

Language: Английский

Citations

15
Exploring Nanoscale Perovskite Materials for Next-Generation Photodetectors: A Comprehensive Review and Future Directions DOI Creative Commons
Xin Li,

Sikandar Aftab,

Maria Mukhtar

et al.

Nano-Micro Letters, Journal Year: 2024, Volume and Issue: 17(1)

Published: Sept. 30, 2024

Abstract The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications. These are promising candidates next-generation photodetectors (PDs) due to their unique optoelectronic properties and flexible synthesis routes. This review explores the approaches used development use devices made different architectures, including quantum dots, nanosheets, nanorods, nanowires, nanocrystals. Through a thorough analysis recent literature, also addresses common issues like mechanisms underlying degradation PDs offers perspectives on potential solutions improve stability scalability that impede widespread implementation. In addition, it highlights encompasses detection light fields dimensions other than intensity suggests avenues future research overcome these obstacles fully realize state-of-the-art systems. provides comprehensive overview guides efforts towards improved performance wider applicability, making valuable resource researchers.

Language: Английский

Citations

11
Tunable cold/warm white light emission from Bi3+/Te4+ co-doped Cs2ZrCl6 perovskite phosphors DOI Creative Commons
Shaolong Liu, Wenfeng Sun,

Jingxuan He

et al.

APL Materials, Journal Year: 2024, Volume and Issue: 12(3)

Published: March 1, 2024

Combining a single-component white-light phosphor with ultraviolet light emitting diode chips emerges as promising method to produce white-light-emitting diodes (WLEDs). Nevertheless, it is still challenge for synthesizing phosphors high color rendering index (CRI). Herein, Bi3+/Te4+ co-doped Cs2ZrCl6 perovskite presented CRI of 91.7 and good stability against oxygen, water, heat. The microcrystals were prepared using an ultrasound-assisted hydrochloric acid controllable Bi3+ Te4+ dopant contents. By manipulating the excitation wavelength, emission can be altered between cold warm white. also emit warm-white light, showing photoluminescence quantum yield 82.9%. great environmental offer new approach synthesis single-phase have potentiality application WLEDs.

Language: Английский

Citations

5
High‐Performance Bi2O3/SnS–SnO2/p‐Si Heterojunction Broadband Photodetector with Low Dark Current and Fast Response DOI Open Access

Yuanhao Kang,

Le Wang, Hui Dong

et al.

physica status solidi (RRL) - Rapid Research Letters, Journal Year: 2025, Volume and Issue: unknown

Published: March 24, 2025

Currently, constructing multiheterojunction photodetectors by using reasonable band arrangement between different materials is an effective means to enhance the photodetector's optical response, broaden its working range, and reduce response time. In this investigation, a novel heterojunction structure of Bi 2 O 3 /SnS–SnO /p‐Si (BSS) fabricated via modified two‐step sol–gel spin coating technique. Comparative analysis with original SnS–SnO binary (BS) heterojunctions reveals that ternary BSS photodetector demonstrates broad‐spectrum light reduced dark current, operating within wavelength range from 254 1200 nm. Under bias voltage −5 V illumination at 780 nm, device exhibits photocurrent 1.42 × 10 A low current −10 A, yielding impressive switching ratio 2.91 4 . Additionally, time 0.04 s, which 123 times faster than device. Furthermore, under nm illumination,the responsivity R detection sensitivity are measured be 0.14 W −1 1.13 12 Jones, respectively. These findings underscore rational alignment pivotal for their exceptional performance highlights potential advancement as broadband high‐performance photodetector.

Language: Английский

Citations

0
High‐Performance Broadband Photodetector Based on PbI2/Bi2S3/p‐Si Heterojunction DOI
Le Wang,

Yuanhao Kang,

He Zhang

et al.

physica status solidi (a), Journal Year: 2025, Volume and Issue: unknown

Published: April 1, 2025

Herein, Bi 2 S 3 (BS) device is prepared using the sol–gel spin coating method, which rarely employed in field of photodetectors (PDs), and PbI /Bi /p‐Si (PBSS) heterojunction constructed for first time. The PBSS PD exhibits a ultraviolet–visible light–infrared (UV–Vis–IR) broadband response ranging from 365 to 1200 nm. Under 5 V bias 880 nm illumination, switching ratio, responsivity, detectivity are 4.64 × 10 , 397.60 mA W −1 5.67 11 Jones, higher than those single BS 25, 7, 13 times, respectively. Besides, current decay time 22.5 ms, 157 times faster that PD. Furthermore, energy band analysis reveals stepped alignment p‐Si semiconductors plays pivotal role facilitating efficient carrier separation. These findings underscore obtained high‐performance shows significant potential applications UV–Vis–IR

Language: Английский

Citations

0
High‐Performance Self‐Powered Organic Photodetectors for Near‐Infrared Weak Light Detection DOI

Haixia Liang,

Junyao Zhang, Xinglei Zhao

et al.

Small, Journal Year: 2025, Volume and Issue: unknown

Published: April 3, 2025

Near-infrared (NIR) organic photodetectors (OPDs) have significant potential in the development of night vision, optical communication, and image-sensing systems. However, most them require external energy consumption, particularly investigation focuses on weak light detection NIR region at or beyond 1000 nm remains limited. In this study, self-powered OPDs with a PCE10:COTIC-4F bulk heterojunction as photoactive layer are designed, which capable responding to an ultra-weak signal 6.3 pW cm-2 nm, demonstrating significantly low level comparison currently reported OPDs. addition, also exhibit other outstanding photodetection performance, including large Ilight/Idark ratio 3.47 × 106, high responsivity 1.50 A W-1, detectivity 3.17 1013/1.80 1011 Jones (evaluated by dark/noise current methods). Furthermore, unencapsulated demonstrate almost no obvious attenuation air during 224-day test aging environment 67-day test. More importantly, for flexible electronics, imaging, selectivity visible-blind characteristic. The provides accessible viable route advancing detection.

Language: Английский

Citations

0
Scalable growth of lead-free single-crystalline CsAg2I3 perovskite microribbons with 1D electronic structure: Insights from experiment and DFT DOI Creative Commons
Md. Zahidur Rahaman, Chun‐Ho Lin

Journal of Physics and Chemistry of Solids, Journal Year: 2025, Volume and Issue: unknown, P. 112799 - 112799

Published: April 1, 2025

Language: Английский

Citations

0
High Detectivity and Stability Self-Powered UV Photodetector Based on the GaN/CsAg₂I₃ Microbelt Heterojunction DOI
Xin Wang, Pengbin Gui, Xinjian Wei

et al.

IEEE Electron Device Letters, Journal Year: 2024, Volume and Issue: 45(8), P. 1488 - 1491

Published: June 7, 2024

Language: Английский

Citations

3
The nature of photocatalytic hydrogen generation on silicon nanowires prepared by MAWC DOI
Tingsen Ming,

Xiuzhi Hu,

Zhaohao Wang

et al.

International Journal of Hydrogen Energy, Journal Year: 2024, Volume and Issue: 71, P. 42 - 47

Published: May 20, 2024

Language: Английский

Citations

1