MXene‐Based Flexible Memory and Neuromorphic Devices
Yan Li,
No information about this author
Guanglong Ding,
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Yongbiao Zhai
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et al.
Small,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 31, 2025
As
the
age
of
Internet
Things
(IoTs)
unfolds,
along
with
rapid
advancement
artificial
intelligence
(AI),
traditional
von
Neumann-based
computing
systems
encounter
significant
challenges
in
handling
vast
amounts
data
storage
and
processing.
Bioinspired
neuromorphic
strategies
offer
a
promising
solution,
characterized
by
features
in-memory
computing,
massively
parallel
processing,
event-driven
operations.
Compared
to
rigid
silicon-based
devices,
flexible
devices
are
lightweight,
thin,
highly
stretchable,
garnering
considerable
attention.
Among
materials
utilized
these
transition
metal
carbides/nitrides
(MXenes)
particularly
noteworthy
their
excellent
flexibility,
exceptional
conductivity,
hydrophilicity,
which
confer
remarkable
properties
upon
devices.
Herein,
comprehensive
discussion
is
provided
on
applications
MXenes
memory
This
review
covers
basic
principles
device
structures
common
parameters
emerging
as
well
synthesis,
functionalization
methods,
distinct
MXenes.
The
remaining
future
opportunities
relevant
also
presented.
can
serve
valuable
reference
lay
cornerstone
for
practical
feasible
implementation
technologies.
Language: Английский
Optically-modulated and mechanically-flexible MXene artificial synapses with visible-to-near IR broadband-responsiveness
Chung Won Lee,
No information about this author
Seung Ju Kim,
No information about this author
Han-Kyun Shin
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et al.
Nano Today,
Journal Year:
2025,
Volume and Issue:
61, P. 102633 - 102633
Published: Jan. 10, 2025
Language: Английский
An innovative biomimetic technology: Memristors mimic human sensation
Kun Wang,
No information about this author
Mengna Wang,
No information about this author
Bai Sun
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et al.
Nano Energy,
Journal Year:
2025,
Volume and Issue:
unknown, P. 110698 - 110698
Published: Jan. 1, 2025
Language: Английский
Multifunctional Artificial Electric Synapse of MoSe2-Based Memristor toward Neuromorphic Application
Yumo Li,
No information about this author
Hao Sun,
No information about this author
Langchun Yue
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et al.
The Journal of Physical Chemistry Letters,
Journal Year:
2025,
Volume and Issue:
unknown, P. 1175 - 1183
Published: Jan. 23, 2025
Research
on
memristive
devices
to
seamlessly
integrate
and
replicate
the
dynamic
behaviors
of
biological
synapses
will
illuminate
mechanisms
underlying
parallel
processing
information
storage
in
human
brain,
thereby
affording
novel
insights
for
advancement
artificial
intelligence.
Here,
an
electric
synapse
is
demonstrated
a
one-step
Mo-selenized
MoSe2
memristor,
having
not
only
long-term
stable
resistive
switching
characteristics
(reset
0.51
±
0.01
V,
on/off
ratio
>
30,
retention
103
s)
but
also
diverse
electrically
adjustable
synaptic
behaviors,
including
multilevel
conductance
(synaptic
weight),
excitatory
postsynaptic
current
(EPSC),
paired-pulse
facilitation
(PPF),
potentiation/depression
(LTP/D),
spike-timing-dependent
plasticity
(STDP),
especially
activity-dependent
(ADSP).
More
significantly,
neuromorphic
functions
both
image
edge
extraction
perception
imitation
have
been
successfully
achieved.
These
results
present
promising
design
toward
advancing
systems
with
integrated
brain-like
neural
sensing,
memory,
recognition.
Language: Английский
Two-Dimensional Zeolitic Imidazolate Framework Based Optoelectronic Synaptic Transistor
Ziqi Jia,
No information about this author
Wen-Min Zhong,
No information about this author
Kui Zhou
No information about this author
et al.
The Journal of Physical Chemistry Letters,
Journal Year:
2025,
Volume and Issue:
unknown, P. 3012 - 3021
Published: March 17, 2025
Neuromorphic
computing
systems
that
integrate
memory
and
computation
offer
a
solution
to
the
limitations
of
traditional
von
Neumann
architectures.
Optoelectronic
synaptic
transistors,
responding
both
optical
electrical
signals,
enable
multifunctional
operation
with
low
power
consumption.
However,
challenges
such
as
short
data
retention
processing
efficiency
remain.
This
study
presents
an
optoelectronic
transistor
utilizing
two-dimensional
(2D)
MoS2,
2D
zeolitic
imidazolate
framework
(ZIF)
Zn2(bim)4,
gold
(Au)
nanoparticles
(NPs)
semiconductor,
tunneling
layer,
floating
gate
materials,
respectively.
By
adjusting
layer
thickness,
charge-blocking
capacity
Zn2(bim)4
is
modulated,
improving
long-term
retention.
The
properties
MoS2
charge-trapping
ability
Au
NPs
mimic
behaviors
postsynaptic
current
(PSC),
potentiation
(LTP),
transition
from
short-term
(STM-LTM).
device
can
also
be
integrated
into
artificial
neural
network
(ANN)
for
smart
healthcare
applications,
achieving
88.1%
accuracy
in
electrocardiogram
classification
through
dual-mode
stimulation.
Language: Английский