Ultraviolet Photothermal Radiation Customized Nitrogen Terminals of Ti3C2Tx MXene for High-Performance Supercapacitors DOI
Yongfang Liang,

Man Cai,

Jianghai Li

et al.

Langmuir, Journal Year: 2025, Volume and Issue: unknown

Published: May 1, 2025

Two-dimensional MXenes have emerged as exceptional electrode materials for supercapacitors (SCs), making them highly attractive energy storage and conversion applications. However, their electrochemical performance is strongly influenced by surface terminal groups interlayer spacing. In this study, we introduce an ultraviolet(UV)-induced nitrogen-doping method that employs UV radiation to promote the thermal decomposition of ammonium oxalate while inducing nitrogen-doping. The resulting UV-induced nitrogen-doped Ti3C2Tx (I-Ti3C2Tx-N) exhibits a high N doping level 1.46 at. % expanded lattice spacing 1.43 nm. As result, I-Ti3C2Tx-N demonstrates pseudocapacitance performance, achieving remarkable specific capacitance 466.28 F g-1, significantly exceeding raw (367.96 g-1). Furthermore, when integrated into quasi-solid-state SC device, it delivers impressive density 12.58 Wh kg-1 at power 250.00 W kg-1. enhanced attributed effects radiation, which introduces groups, eliminates detrimental -F -OH terminals, increases This study highlights simple yet effective modifying MXene materials, offering another way optimizing properties in

Language: Английский

Ultraviolet Photothermal Radiation Customized Nitrogen Terminals of Ti3C2Tx MXene for High-Performance Supercapacitors DOI
Yongfang Liang,

Man Cai,

Jianghai Li

et al.

Langmuir, Journal Year: 2025, Volume and Issue: unknown

Published: May 1, 2025

Two-dimensional MXenes have emerged as exceptional electrode materials for supercapacitors (SCs), making them highly attractive energy storage and conversion applications. However, their electrochemical performance is strongly influenced by surface terminal groups interlayer spacing. In this study, we introduce an ultraviolet(UV)-induced nitrogen-doping method that employs UV radiation to promote the thermal decomposition of ammonium oxalate while inducing nitrogen-doping. The resulting UV-induced nitrogen-doped Ti3C2Tx (I-Ti3C2Tx-N) exhibits a high N doping level 1.46 at. % expanded lattice spacing 1.43 nm. As result, I-Ti3C2Tx-N demonstrates pseudocapacitance performance, achieving remarkable specific capacitance 466.28 F g-1, significantly exceeding raw (367.96 g-1). Furthermore, when integrated into quasi-solid-state SC device, it delivers impressive density 12.58 Wh kg-1 at power 250.00 W kg-1. enhanced attributed effects radiation, which introduces groups, eliminates detrimental -F -OH terminals, increases This study highlights simple yet effective modifying MXene materials, offering another way optimizing properties in

Language: Английский

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