Optics Express,
Journal Year:
2021,
Volume and Issue:
30(3), P. 3172 - 3172
Published: Dec. 31, 2021
We
demonstrate
unique
reflective
properties
of
light
from
bare
and
gold-coated
InP
nanowire
(NW)
photonic
crystal
arrays.
The
undoped
wurtzite
arrays
are
grown
by
selective
area
epitaxy
coated
with
a
12-nm
thick
Al2O3
film
to
suppress
atmospheric
oxidation.
A
nominally
10-nm
gold
is
deposited
around
the
NWs
investigate
plasmonic
effects.
reflectance
spectra
show
pronounced
Fabry-Perot
oscillations,
which
shifted
for
p-
s-polarized
due
strong
intrinsic
birefringence
in
NW
Gold-coating
array
leads
significant
increase
factor
two
three
compared
uncoated
array,
partially
attributed
plasmon
resonance
caps
on
top
antenna
effect
p-polarized
light.
These
interpretations
supported
finite-difference-time-domain
simulations.
Our
experiments
simulations
indicate
that
can
be
used
design
micrometer-sized
polarizers,
analyzers,
mirrors
important
optical
elements
optoelectronic
integrated
circuits.
Advanced Materials Technologies,
Journal Year:
2023,
Volume and Issue:
8(13)
Published: April 4, 2023
Abstract
In
recent
years,
III–V
semiconductor
nanowires
have
been
widely
investigated
for
infrared
photodetector
applications
due
to
their
direct
and
suitable
bandgap,
unique
optical
electrical
properties,
flexibility
in
device
design
create
heterostructures,
and/or
grow
on
a
foreign
substrate
such
as
Si
with
more
effective
strain
relaxation
compared
planar
structures.
particular,
vertically
aligned
ordered
nanowire
arrays
emerged
promising
platform,
since
geometry‐related
light
absorption
carrier
transport
properties
can
be
tailored
achieve
high
performance
new
functionalities.
this
article,
the
state‐of‐the‐art
progress
development
of
various
types
photodetectors
based
is
reviewed.
The
synthesis/fabrication
methods
are
introduced
briefly
at
first,
followed
by
discussions
working
principle
array‐based
emerging
applications.
Finally,
we
analyze
challenges
present
perspectives
future
low‐cost,
large‐scale,
high‐performance
array
practical
Advanced Functional Materials,
Journal Year:
2021,
Volume and Issue:
32(3)
Published: July 2, 2021
Abstract
III‐V
semiconductor
nanowires
with
quantum
wells
(QWs)
are
promising
for
ultra‐compact
light
sources
and
photodetectors
from
visible
to
infrared
spectral
region.
However,
most
of
the
reported
InGaAs/InP
QW
based
on
wurtzite
phase
exhibit
non‐uniform
morphology
due
complex
heterostructure
growth,
making
it
challenging
incorporate
multiple‐QWs
(MQW)
optoelectronic
applications.
Here,
a
new
strategy
growth
MQW
nanowire
arrays
by
selective
area
metalorganic
vapor
epitaxy
is
reported.
It
revealed
that
{110}
faceted
InP
mixed
zincblende
phases
can
be
achieved,
forming
critical
base
subsequent
highly‐uniform,
taper‐free,
hexagonal‐shaped
excellent
optical
properties.
Room‐temperature
lasing
at
wavelength
≈1
µm
under
pumping
achieved
low
threshold.
By
incorporating
dopants
form
an
n
+
‐i‐n
structure,
40‐QW
array
demonstrated
broadband
response
(400–1600
nm)
high
responsivities
2175
A
W
−1
980
nm
outperforming
those
conventional
planar
InGaAs
photodetectors.
The
results
show
highly
feasible
achieve
high‐quality
development
future
devices
integrated
photonic
systems.
Chinese Physics B,
Journal Year:
2020,
Volume and Issue:
30(2), P. 028507 - 028507
Published: Dec. 1, 2020
In
recent
years,
low-dimensional
materials
have
received
extensive
attention
in
the
field
of
electronics
and
optoelectronics.
Among
them,
photoelectric
devices
based
on
photoconductive
effect
a
broad
development
space.
contrast
to
positive
photoconductivity,
negative
photoconductivity
(NPC)
refers
phenomenon
that
conductivity
decreases
under
illumination.
It
has
novel
application
prospects
optoelectronics,
memory,
gas
detection,
etc
.
this
paper,
we
review
reports
about
NPC
systematically
summarize
mechanisms
form
existing
materials.
Nanotechnology,
Journal Year:
2024,
Volume and Issue:
35(38), P. 382002 - 382002
Published: May 17, 2024
Abstract
Due
to
the
suitable
bandgap
structure,
efficient
conversion
rates
of
photon
electron,
adjustable
optical
bandgap,
high
electron
mobility/aspect
ratio,
low
defects,
and
outstanding
electrical
properties
for
device
design,
III–V
semiconductors
have
shown
excellent
optoelectronic
applications,
including
photodiodes,
photodetectors,
solar
cells,
photocatalysis,
etc.
In
particular,
nanostructures
attracted
considerable
interest
as
a
promising
photodetector
platform,
where
high-performance
photodetectors
can
be
achieved
based
on
geometry-related
light
absorption
carrier
transport
materials.
However,
detection
ranges
from
Ultraviolet
Terahertz
broadband
still
not
been
more
broadly
development
despite
significant
efforts
obtain
performance
semiconductors.
Therefore,
recent
in
broad
range
Terahertz,
future
requirements
are
highly
desired.
this
review,
semiconductor
with
different
is
discussed.
First,
materials
synthesis
methods
explored,
subsequently,
mechanism
key
figures-of-merit
introduced,
then
emerging
applications
provided.
Lastly,
challenges
research
directions
presented.
Applied Physics Letters,
Journal Year:
2025,
Volume and Issue:
126(4)
Published: Jan. 27, 2025
Recently,
InGaAs/InP
multiple
quantum
well
nanowires
grown
by
selective
area
epitaxy
have
been
demonstrated
with
uniform
morphology
and
high
optical
quality.
The
InGaAs
wells
wrapping
around
the
nanowire
core
are
formed
both
axial
radial
components.
As
such
configuration
presents
a
unique
advantage
for
realization
of
intraband
absorption
normal-incidence
light
in
nanowires,
which
cannot
be
achieved
conventional
planar
structures
due
to
polarization
selection
rules.
We
report
here
mid-infrared
transitions
within
atmospheric
window
(3–5
μm)
InP
arrays
embedded
five
under
light.
coefficient
is
modeled,
peak
indicates
bound-to-continuum
transition.
photocurrent
shows
linear
dependence
on
incident
power,
while
interband
photoresponse
sublinear
surface
states
nanowires.
These
open
up
great
opportunities
developing
next-generation
mid-
long-wavelength
infrared
photodetectors
focal
plane
arrays.
National Science Review,
Journal Year:
2020,
Volume and Issue:
8(9)
Published: Dec. 12, 2020
In
modern
electronics
and
optoelectronics,
hot
electron
behaviors
are
highly
concerned,
as
they
determine
the
performance
limit
of
a
device
or
system,
like
associated
thermal
power
constraint
chips
Shockley-Queisser
for
solar
cell
efficiency.
To
date,
however,
manipulation
electrons
has
been
mostly
based
on
conceptual
interpretations
rather
than
direct
observation.
The
problem
arises
from
fundamental
fact
that
energy-differential
mixed
up
in
real-space,
making
it
hard
to
distinguish
them
each
other
by
standard
measurements.
Here
we
demonstrate
distinct
approach
artificially
(spatially)
separate
cold
ones
semiconductor
nanowire
transistors,
which
thus
offers
unique
opportunity
observe
modulate
occupied
state,
energy,
mobility
even
path.
Such
process
is
accomplished
through
scanning-photocurrent-microscopy
measurements
activating
intervalley-scattering
events
1D
charge-neutrality
rule.
Findings
here
may
provide
new
degree
freedom
manipulating
non-equilibrium
both
electronic
optoelectronic
applications.
Nanotechnology,
Journal Year:
2024,
Volume and Issue:
35(21), P. 215206 - 215206
Published: Feb. 21, 2024
Here
we
report
on
an
experimental
and
theoretical
investigation
of
the
long-wavelength
infrared
(LWIR)
photoresponse
photodetectors
based
arrays
three
million
InP
nanowires
with
axially
embedded
InAsP
quantum
discs.
An
ultra-thin
top
indium
tin
oxide
contact
combined
a
novel
photogating
mechanism
facilitates
improved
LWIR
normal
incidence
sensitivity
in
contrast
to
traditional
planar
well
photodetectors.
The
electronic
structure
discs,
including
strain
defect-induced
effects,
optical
transition
matrix
elements
were
calculated
by
8-band
Nanoscale,
Journal Year:
2021,
Volume and Issue:
13(12), P. 6227 - 6233
Published: Jan. 1, 2021
We
report
on
experimental
results
and
advanced
self-consistent
simulations
revealing
a
non-linear
optical
response,
resulting
from
trap-induced
photogating
mechanism,
observed
in
InP
nanowire
array
photoconductors
with
embedded
InAsP
quantum
discs.
