Perovskite Field-Effect Transistor Memory Employing a Large Grain Sized α-Phase Formamidinium Lead Triiodide DOI

Donghyeok Kim,

Young Ran Park,

Chanhyeok Kim

et al.

ACS Applied Electronic Materials, Journal Year: 2024, Volume and Issue: 6(9), P. 6561 - 6568

Published: Aug. 27, 2024

Halide perovskite materials have emerged as highly promising candidates for a wide range of electrical and optical devices due to their high charge carrier mobility, tunable band gaps, facile manufacturability. However, potential use active channels in field-effect transistor (FET) memory remains underexplored, primarily challenges related operational instability the control interfaces crystallinity. Here, we present significant advancement (PeFET) devices, utilizing large grain-sized α-phase formamidinium lead triiodide (FAPbI3). The FAPbI3 was synthesized using black powder method with MACl MDACl2 additives, resulting enhanced crystallinity well-defined energy bandgap. Additionally, it demonstrated excellent stability external environmental conditions, such humidity (≥40 RH %) thermal conditions (≤150 °C). Using this method, fabricated PeFET anticlockwise p-type switching behavior an ION/IOFF ratio 1.34 ± 0.54 × 103 durability over 100 continuous sweeping cycles under ambient conditions. We propose mechanism that relies on combined effects mixed ionic-electronic conduction trapping detrapping at interface between SiO2.

Language: Английский

Ion Migration at Metal Halide Perovskite Grain Boundaries Elucidated with a Machine Learning Force Field DOI Creative Commons
Mikhail R. Samatov, Dongyu Liu, Long Zhao

et al.

The Journal of Physical Chemistry Letters, Journal Year: 2024, Volume and Issue: unknown, P. 12362 - 12369

Published: Dec. 9, 2024

Metal halide perovskites are promising optoelectronic materials with excellent defect tolerance in carrier recombination, believed to arise largely from their unique soft lattices. However, weak lattice interactions also promote ion migration, leading serious stability issues. Grain boundaries (GBs) have been experimentally identified as the primary migration channels, but relevant mechanism remains elusive. Using molecular dynamics a machine learning force field, we directly model at common CsPbBr3 GB. We demonstrate that as-built GB model, containing 6400 atoms, experiences structural reconstruction over several nanoseconds, and only Br atoms diffuse after that. A fraction of near either migrate toward center or along through different channels. Increasing temperature not accelerates via Arrhenius activation allows more migrate. The energies much lower than bulk due large-scale distortions favorable non-stoichiometric local environments available GBs. Making composition stoichiometric by doping annealing can suppress migration. reported results provide valuable atomistic insights into properties metal perovskites.

Language: Английский

Citations

4
Peering into interfaces in perovskite solar cells: A first-principles perspective DOI

Xiang-lin LIU,

Jinshan Li, Xie Zhang

et al.

Journal of Physics Condensed Matter, Journal Year: 2025, Volume and Issue: 37(15), P. 151502 - 151502

Published: Feb. 24, 2025

Over the past decade, perovskite solar cells (PSCs) have experienced a rapid development. The remarkable increase in photoelectric conversion efficiency demonstrates great promise of halide perovskites field photovoltaics. Despite excellent photovoltaic performance, further efforts are needed to enhance and stability. Interfacial engineering plays crucial role enhancing stability PSCs, enabling champion sustain power above 26% for over 1000 h. As powerful theoretical tool characterizing interfaces first-principles calculations contributed understanding interfacial properties guiding materials design. In this Perspective, we highlight recent progress theoretically profiling between other materials, focusing on effects energy band alignment electronic structure carrier transport at interfaces. These help reveal atomic interfaces, provide important guidance experimental research device optimization. We also analyze potential strategies separation discuss challenges accurate modeling which will understand fundamental physics PSCs guide their

Language: Английский

Citations

0
Microstructure-modulated conductive filaments in Ruddlesden-Popper perovskite-based memristors and their application in artificial synapses DOI
Fu-Chiao Wu, Zhicheng Su, Yu‐Chieh Hsu

et al.

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101708 - 101708

Published: March 1, 2025

Language: Английский

Citations

0
Using the Transversal Admittance to Understand Organic Electrochemical Transistors DOI Creative Commons
Juan Bisquert, Scott T. Keene

Advanced Science, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 25, 2024

The transient behavior of organic electrochemical transistors (OECTs) is complex due to mixed ionic-electronic properties that play a central role in bioelectronics and neuromorphic applications. Some works applied impedance spectroscopy OECTs for understanding transport the frequency-dependent response devices. transversal admittance (drain current vs gate voltage) used sensing However, general theory admittance, until now, has been incomplete. derive model combines electronic motion along channel vertical ion diffusion by insertion from electrolyte, depending on several features as chemical capacitance, coefficient ions, mobility. Based charge conservation equations, it shown produces standard result intercalation systems, while contains parameters hole accumulation channel. spectral shapes drain currents spectra are established reference equivalent circuit models impedances, describe well measurements PEDOT:PSS OECT. New insights provided determination mobility ratio between currents.

Language: Английский

Citations

3
Exciton Transport in Perovskite Materials DOI Open Access
Thomas Sheehan, Seryio Saris, William A. Tisdale

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 30, 2024

Halide perovskites have emerged as promising materials for a wide variety of optoelectronic applications, including solar cells, light-emitting devices, photodetectors, and quantum information applications. In addition to their desirable optical electronic properties, halide provide tremendous synthetic flexibility through variation not only chemical composition but also structure morphology. At the heart use in technologies is interaction light with excitations form excitons. This review discusses properties behavior excitons perovskite materials, particular emphasis on low-dimensional effects nanoscale morphology excitonic behavior. The basic theory energy migration semiconductor nanomaterials introduced, novel observations that evolved our current understanding are explored. Finally, many important questions remain unanswered presented exciting emerging directions exciton physics discussed.

Language: Английский

Citations

3
Organic Surface Doping for High‐Performance Perovskite Transistors DOI Creative Commons
Ju‐Hyeon Kim, Chang‐Mok Oh, In‐Wook Hwang

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 35(2)

Published: Aug. 29, 2024

Abstract Quasi‐2D perovskites have attracted significant attention because of their environmental robustness and superior long‐term stability compared with 3D counterparts. However, they typically consist a mixture multiple quantum wells different optoelectrical properties, which degrades the electronic properties hinders further applications. Here, to challenge this issue, surface p‐doping strategy involving introduction thiophene‐containing polymer onto quasi‐2D tin is reported. The ions in effectively interact sulfur atoms thiophene moieties, thereby generating hole carriers inducing p‐doping. resulting doped exhibit excellent crystallinity, lower trap density, enhanced charge carrier transport capability along perovskite semiconductor channels. Consequently, perovskite‐based transistors high field‐effect mobility 53 cm 2 V −1 s (7 for control device) an outstanding on/off ratio (>10 7 ), together operational stability.

Language: Английский

Citations

1
Perovskite Field-Effect Transistor Memory Employing a Large Grain Sized α-Phase Formamidinium Lead Triiodide DOI

Donghyeok Kim,

Young Ran Park,

Chanhyeok Kim

et al.

ACS Applied Electronic Materials, Journal Year: 2024, Volume and Issue: 6(9), P. 6561 - 6568

Published: Aug. 27, 2024

Halide perovskite materials have emerged as highly promising candidates for a wide range of electrical and optical devices due to their high charge carrier mobility, tunable band gaps, facile manufacturability. However, potential use active channels in field-effect transistor (FET) memory remains underexplored, primarily challenges related operational instability the control interfaces crystallinity. Here, we present significant advancement (PeFET) devices, utilizing large grain-sized α-phase formamidinium lead triiodide (FAPbI3). The FAPbI3 was synthesized using black powder method with MACl MDACl2 additives, resulting enhanced crystallinity well-defined energy bandgap. Additionally, it demonstrated excellent stability external environmental conditions, such humidity (≥40 RH %) thermal conditions (≤150 °C). Using this method, fabricated PeFET anticlockwise p-type switching behavior an ION/IOFF ratio 1.34 ± 0.54 × 103 durability over 100 continuous sweeping cycles under ambient conditions. We propose mechanism that relies on combined effects mixed ionic-electronic conduction trapping detrapping at interface between SiO2.

Language: Английский

Citations

0