Recent Advances in PVT Growth of Large‐Diameter, High‐Quality Aluminum Nitride Single Crystals DOI
Wenliang Li,

Qianling Liu,

Jun Tan

et al.

Crystal Research and Technology, Journal Year: 2025, Volume and Issue: unknown

Published: June 2, 2025

Abstract Aluminum Nitride (AlN), an ultra‐wide bandgap semiconductor, boasts a direct of 6.2 eV, exceptional thermal conductivity (340 W m⁻¹ K⁻¹), and high breakdown electric field (15.4 MV cm⁻¹), making it highly attractive for deep ultraviolet optoelectronics high‐frequency power applications. Despite these advantages, the industrial deployment AlN is impeded by challenges in producing large, defect‐controlled single crystals. The Physical Vapor Transport (PVT) method has emerged as leading technique fabricating high‐quality This review systematically examines recent technological breakthroughs PVT‐grown AlN, including both homogeneous heterogeneous substrate strategies, stress management, mechanisms point defect formation, integration simulation techniques process optimization. Innovations temperature gradient control, gas‐phase composition, seed crystal orientation, novel crucible designs have enabled stable growth 2–4 inch crystals with markedly reduced impurity levels. Future research should emphasize multi‐scale modeling experimental validation to surmount existing limitations accelerate practical application advanced electronic devices.

Language: Английский

High breakdown voltage normally off Ga2O3 transistors on silicon substrates using GaN buffer DOI
Mritunjay Kumar, Vishal Khandelwal, Dhanu Chettri

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(19)

Published: May 12, 2025

Normally off beta-phase gallium oxide (β-Ga2O3) metal-oxide field-effect transistors (MOSFETs) on GaN-on-Si substrates were fabricated with a threshold voltage (VTH) of 3 V. β-Ga2O3 thin films deposited using pulsed laser deposition. The device demonstrated an excellent breakdown ∼540 V at VGS = 0 and extremely low gate leakage current ∼10−7 mA/mm. Additionally, it exhibited subthreshold swing (SS) ∼167 mV/dec on/off ratio ∼106. growth fabrication MOSFETs are significant for high performance their monolithic integration GaN devices in future power-integrated circuits.

Language: Английский

Citations

0
Enhancing the Crystal Quality of AlN Thin Films on Patterned Sapphire Substrates Using Temperature-Modulated Growth in the PALE Technique DOI Creative Commons

F. K. Özbakir,

İsmail Altuntaş

Arabian Journal for Science and Engineering, Journal Year: 2025, Volume and Issue: unknown

Published: May 23, 2025

Language: Английский

Citations

0
Recent Advances in PVT Growth of Large‐Diameter, High‐Quality Aluminum Nitride Single Crystals DOI
Wenliang Li,

Qianling Liu,

Jun Tan

et al.

Crystal Research and Technology, Journal Year: 2025, Volume and Issue: unknown

Published: June 2, 2025

Abstract Aluminum Nitride (AlN), an ultra‐wide bandgap semiconductor, boasts a direct of 6.2 eV, exceptional thermal conductivity (340 W m⁻¹ K⁻¹), and high breakdown electric field (15.4 MV cm⁻¹), making it highly attractive for deep ultraviolet optoelectronics high‐frequency power applications. Despite these advantages, the industrial deployment AlN is impeded by challenges in producing large, defect‐controlled single crystals. The Physical Vapor Transport (PVT) method has emerged as leading technique fabricating high‐quality This review systematically examines recent technological breakthroughs PVT‐grown AlN, including both homogeneous heterogeneous substrate strategies, stress management, mechanisms point defect formation, integration simulation techniques process optimization. Innovations temperature gradient control, gas‐phase composition, seed crystal orientation, novel crucible designs have enabled stable growth 2–4 inch crystals with markedly reduced impurity levels. Future research should emphasize multi‐scale modeling experimental validation to surmount existing limitations accelerate practical application advanced electronic devices.

Language: Английский

Citations

0