Advanced Materials Interfaces,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Oct. 3, 2024
Abstract
Green
energy
collection
is
crucial
for
achieving
future
net‐zero
carbon
emissions,
with
harvesting
being
a
key
solution.
Silicon,
widely
used
p‐type
semiconductor
doped
boron
ions,
prevalent
in
modern
electronics.
However,
the
impact
of
lattice
boundaries
from
ion
implantation
doping
on
thermoelectric
properties
remains
underexplored.
A
heavily
boron‐doped
silicon
layer
to
enhance
performance.
The
layers,
formed
silicon,
exhibit
epitaxial
crystal
structures
under
all
conditions
using
an
system.
Transmission
electron
microscopy
and
atom
probe
tomography
reveal
that
interstitial
create
lattice.
These
effectively
reduce
thermal
conductivity
compared
intrinsic
silicon.
At
372.76
K,
best
power
factor
3.05
mW/m·K
2
,
obtained
at
implant
dose
10
16
cm
−2
.
This
study
demonstrates
raised
electrical
induced
by
substituting
atoms,
reduced
caused
interstitial‐formed
findings
highlight
potential
improving
materials
advancing
energy‐efficient
technologies.
Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: April 21, 2025
Abstract
With
dramatically
growing
demand
for
highly
complicated,
high
power‐consumed
3D
stacked
integrated
circuit
electronics,
the
advancement
of
effective
thermal
management
has
become
a
key
technology
to
secure
both
performance
and
stability.
To
ensure
better
heat
microelectronics,
especially
pursuing
unconventional
devices
assembled
on
sheet
paper
or
plastics,
more
feasible
is
inevitable.
In
this
study,
mechanically
robust
bi‐directionally
conductive
material
are
presented
by
micro‐molding
with
boron‐nitride
(BN)
microscale
platelets
(µ‐platelets)
dispersed
in
polymeric
matrix.
Micro‐pattern‐induced
bifurcation
assembly
orientation
BN
µ‐platelets
bi‐directionality
conduction
characteristics
observed.
The
bifurcated
orientations
optimized
geometry
micro‐pattern
unit
size
assistance
particle‐fluid
simulation.
Indeed,
exceptionally
enhanced
conductivities
through
directions:
6.9
W
m
−1
K
through‐plane
7.4
in‐plane,
respectively
achieved.
It
also
exhibits
flexibility
minimum
radius
curvature
≈1
mm
capability
conformal
contact
diverse
morphologies
stably
flow
even
deformed
device
structures.
developed
TIM
can
be
applied
high‐power,
high‐temperature,
deformable
application
environments
3D‐integrated
electronics.
Nanomaterials,
Journal Year:
2024,
Volume and Issue:
14(6), P. 542 - 542
Published: March 20, 2024
Flexible
thermoelectric
generators
(FTEGs),
which
can
overcome
the
energy
supply
limitations
of
wearable
devices,
have
received
considerable
attention.
However,
use
toxic
Te-based
materials
and
fracture-prone
electrodes
constrains
application
FTEGs.
In
this
study,
a
novel
Ag2Se
Poly
(3,4-ethylene
dioxythiophene):
poly
(styrene
sulfonate)
(PEDOT:PSS)/multi-walled
carbon
nanotube
(MWCNT)
FTEG
with
high
output
performance
good
flexibility
is
developed.
The
columns
formulated
in
work
are
environmentally
friendly
reliable.
key
enabler
embedded
EGaIn
electrodes,
increase
temperature
difference
collected
by
column,
thereby
improving
performance.
Additionally,
could
be
directly
printed
on
polydimethylsiloxane
(PDMS)
molds
without
wax
paper,
simplifies
preparation
process
FTEGs
enhances
fabrication
efficiency.
exhibits
highest
power
density
25.83
μW/cm2
10.95
μW
at
ΔT
=
15
K.
latter
31.6%
higher
than
that
silver-based
2.5%
covered
EGaIn-based
Moreover,
prepared
has
an
excellent
(>1500
bends)
stability
(>30
days).
At
humidity
temperature,
maintains
These
results
demonstrate
used
as
stable
for
devices.
Advanced Materials Technologies,
Journal Year:
2024,
Volume and Issue:
9(14)
Published: April 9, 2024
Abstract
Wearable
thermoelectric
devices
are
widely
used
due
to
their
ability
generate
heat
and
cool
rapidly
without
the
need
for
bulky
external
equipment.
Researchers
have
explored
methods
enhance
flexibility
stretchability
by
incorporating
liquid
metal
as
an
electrode.
However,
challenge
lies
in
low
thermal
conductivity
of
polymer,
which
hampers
heating
cooling
performance.
Traditional
methods,
like
molding
spraying,
increase
thickness
both
polymer
channels,
but
this
added
does
not
significantly
improve
device's
stretchability.[1,
2]
To
overcome
these
issues,
paper
proposes
a
stretchable
device
(STED),
offers
improved
capabilities,
well
enhanced
stretchability.
Ag
powder
with
varying
particle
sizes
is
mixed
material.
Additionally,
deposited
using
direct
ink
writing
(DIW)
method,
reducing
whole
STED.
The
air
layer
created
printing
molten
isomalt,
subsequently
removed
water.
proposed
STED
exhibits
high
stretchability,
reaching
up
150
%,
enabling
flexible
twisting
various
directions.
double‐layer
structure
resulted
maximum
temperature
decrease
14
°C
at
room
temperature.
Next Materials,
Journal Year:
2023,
Volume and Issue:
2, P. 100092 - 100092
Published: Dec. 30, 2023
Ambient
gas
monitoring
has
been
studied
for
over
a
century,
and
the
field
of
self-powered
sensors
is
advancing
rapidly.
Currently,
main
solution
conversion
ambient
energy
into
electrical
its
use
to
power
sensors.
Various
harvesters
are
available,
such
as
frictional
electric
nanogenerators,
piezoelectric
thermoelectric
generators,
photovoltaic
cells,
capture
different
forms
energy.
Simultaneously,
can
be
designed
atmospheric
sensing
requirements.
Self-powered
have
shown
great
promise
in
applications
human
health
monitoring,
detection
hazardous
leaks,
prevention
drunk
driving,
preservation
food
pharmaceuticals,
agricultural
production,
condition
industrial
equipment.
However,
commercial
applications,
significant
progress
still
needs
made
on
In
this
review,
an
objective
overview
four
typical
harvesting
devices
provided,
covering
types,
structures,
materials,
sources.
systematically
categorized,
with
latest
research
presented.
Future
trends
then
envisioned
potential
commercialisation
discussed.
Advanced Materials Interfaces,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Oct. 3, 2024
Abstract
Green
energy
collection
is
crucial
for
achieving
future
net‐zero
carbon
emissions,
with
harvesting
being
a
key
solution.
Silicon,
widely
used
p‐type
semiconductor
doped
boron
ions,
prevalent
in
modern
electronics.
However,
the
impact
of
lattice
boundaries
from
ion
implantation
doping
on
thermoelectric
properties
remains
underexplored.
A
heavily
boron‐doped
silicon
layer
to
enhance
performance.
The
layers,
formed
silicon,
exhibit
epitaxial
crystal
structures
under
all
conditions
using
an
system.
Transmission
electron
microscopy
and
atom
probe
tomography
reveal
that
interstitial
create
lattice.
These
effectively
reduce
thermal
conductivity
compared
intrinsic
silicon.
At
372.76
K,
best
power
factor
3.05
mW/m·K
2
,
obtained
at
implant
dose
10
16
cm
−2
.
This
study
demonstrates
raised
electrical
induced
by
substituting
atoms,
reduced
caused
interstitial‐formed
findings
highlight
potential
improving
materials
advancing
energy‐efficient
technologies.