Dual‐Electrolyte Neuromorphic Transistor for Risk Detection and Image Processing DOI
Su‐Kyung Kim, Seungwon Choi,

Mingyu Kim

et al.

Advanced Materials Technologies, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 30, 2024

Abstract The human brain is a highly efficient structure that can easily perform various complex tasks, such as shape recognition, presentation, and classification, while consuming minimal energy occupying only small volume. This study introduces bio‐inspired electrolyte‐gated neuromorphic transistor mimics the functionality of brain. A dual‐electrolyte combining lithium phosphorus oxynitride silicate achieves best performance, with mobility 3.1 cm 2 V −1 s , paired‐pulse facilitation index 162.6%, nonlinearity coefficients 0.02 0.03 (for potentiation depression, respectively). Further, risk pre‐detection image recognition are successfully demonstrated using developed synaptic transistors. test conducted on Modified National Institute Standards Technology database indicates an accuracy 91.0%. Thus, device has potential to advance artificial vision systems.

Language: Английский

Reconfigurable Al2O3-Based Memristor for All-in-One Artificial Synapse and Nociceptor Neurons DOI

Hongshun Du,

Fang Wang, Zewen Li

et al.

The Journal of Physical Chemistry Letters, Journal Year: 2025, Volume and Issue: unknown, P. 2722 - 2730

Published: March 6, 2025

Multifunctional bionic devices have widespread applications in neuromorphic computing, intelligent sensors, and robotics. The inherent properties of memristors make them suitable for these emerging applications, but different require either volatile or nonvolatile operations a unique device. In this work, we developed novel reconfigurable Ag/Al2O3/ITO memristor, which achieves adjustable switching behavior between by modulating the compliance current. A proposed mechanism controls state conductive filaments device adjusting current, elucidating process states. Additionally, synaptic functionality nociceptor characteristics, including threshold, relaxation, inadaptation, sensitization, been successfully simulated. This integration artificial functions into single is achieved, with single-pulse power consumption reaching as low 0.912 nJ when threshold reached. These results provide insights construction multifunctional demonstrate significant potential future network applications.

Language: Английский

Citations

0
Deciphering Mechanisms of Oxygen Vacancy Conducting Channel-Based LiSiOx Artificial Nociceptors DOI

Z.Y. Li,

Yao Shi,

Dianyou Song

et al.

Vacuum, Journal Year: 2025, Volume and Issue: unknown, P. 114296 - 114296

Published: March 1, 2025

Language: Английский

Citations

0
Flexible Memristor Based on Lead‐Free Cs2AgBiBr6 Perovskite for Artificial Nociceptors and Information Security DOI
Jie Tang, Xiaoxin Pan, Xiang Chen

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 9, 2024

Abstract The emergence of the artificial intelligence urgently requires novel devices to handle massive data and bionic simulations. As one new generation memory devices, memristor has great potential in information storage brain‐like learning due its merits, such as low energy consumption, high speed etc. In addition, randomness for breakage conducting filaments can generate true random numbers realize image encryption. this work, ITO/Cs 2 AgBiBr 6 /Al based exhibit prominent resistance variation characteristics long‐term environmental stability (≥6 months). Additionally, flexible PET/ITO/Cs are assembled measured properties, which adopt cryptographic processing information. synaptic plasticity is also verified, including paired pulse facilitation spiking timing‐dependent plasticity. Finally, nociceptive responses simulated with via imposing different voltage. Nociceptive “threshold,” “relaxation,” “sensitization” have been successfully determined. work provides possibility lead‐free perovskite memristors security biomimicry.

Language: Английский

Citations

3
Performance improvement of bilayer memristor based on hafnium oxide by Ti/W synergy and its synaptic behavior DOI
Fei Wang, Fang Wang, Xin Lin

et al.

Vacuum, Journal Year: 2024, Volume and Issue: 227, P. 113392 - 113392

Published: June 12, 2024

Language: Английский

Citations

2
Artificial pain-perceptual nociceptor emulation based on graphene oxide synaptic transistors DOI
Yanmei Sun,

Xinru Meng,

Gexun Qin

et al.

Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: 498, P. 155571 - 155571

Published: Sept. 7, 2024

Language: Английский

Citations

0
A pectin-based artificial nociceptor enabling actual tactile perception DOI
L. Zhou,

Junqing Wei,

Zewen Li

et al.

Journal of Materials Chemistry C, Journal Year: 2024, Volume and Issue: unknown

Published: Jan. 1, 2024

This work focuses on biocompatible material-pectin based artificial nociceptor design, successfully mimicking four basic pain perception characteristics and validating tactile functions by constructing a sensing system.

Language: Английский

Citations

0
Dual‐Electrolyte Neuromorphic Transistor for Risk Detection and Image Processing DOI
Su‐Kyung Kim, Seungwon Choi,

Mingyu Kim

et al.

Advanced Materials Technologies, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 30, 2024

Abstract The human brain is a highly efficient structure that can easily perform various complex tasks, such as shape recognition, presentation, and classification, while consuming minimal energy occupying only small volume. This study introduces bio‐inspired electrolyte‐gated neuromorphic transistor mimics the functionality of brain. A dual‐electrolyte combining lithium phosphorus oxynitride silicate achieves best performance, with mobility 3.1 cm 2 V −1 s , paired‐pulse facilitation index 162.6%, nonlinearity coefficients 0.02 0.03 (for potentiation depression, respectively). Further, risk pre‐detection image recognition are successfully demonstrated using developed synaptic transistors. test conducted on Modified National Institute Standards Technology database indicates an accuracy 91.0%. Thus, device has potential to advance artificial vision systems.

Language: Английский

Citations

0