Sub‐10‐nm Lithography for Sn4–Oxo Clusters: Effect of Molecular Polarity on Sensitivity and Resolution DOI

Yingdong Zhao,

Riyao Cong,

Zijian Chen

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 7, 2025

Abstract Tin‐based metal–oxo clusters have recently garnered considerable attention in high‐energy irradiation lithography because of their nanoscale patterning capabilities. However, achieving sub‐10 nm resolution remains a challenge due to uncontrolled latent image gradients after exposure. In this study, the development mechanism Sn4–oxo cluster is investigated using molecular polarity index model. Resolutions 8 and 17 are successfully achieved for Sn4‐TF electron beam (EBL) extreme ultraviolet (EUVL), respectively. A novel pre‐irradiation modification strategy proposed enhance sensitivity by one‐third both EBL EUVL. The experimental findings theoretical analysis demonstrate that deep (DUV) primarily degrades organic ligands promotes Sn–O–Sn crosslinking, whereas EUVL drive hydrocarbon crosslinking among clusters. This study deepens our understanding Sn–oxo photolithographic reaction mechanisms, offering critical insights optimizing developers enhancing sensitivity. These expected aid realization node technology.

Language: Английский

Single Rare-Earth Ion Doped Tin-Oxo Nanocluster Photoresists for High-Resolution Extreme Ultraviolet Lithography DOI
Fangfang Liu, Guangyue Shi, Zhen Ni

et al.

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 26, 2025

Rare-earth (RE) metals are known as industrial vitamins and show significant regulatory effects in many fields. In this work, we first demonstrated that the vitamin effect of RE can also be applied to extreme ultraviolet (EUV) lithography. Using a Sn8RE oxo cluster universal platform, different individual metal ions were successfully doped obtain series isomorphic heterometallic clusters (RE = Y, Sm, Eu, Ho, Er). Lithography experiments have shown displayed influence on technical parameters. As result, an electron-beam lithography (EBL) line width 11.95 nm was achieved by Sn8Er, EUV critical dimension (CD) 15.90 obtained Sn8Ho under exposure dose 52.64 mJ/cm2. These findings expand applications rare earths high-precision semiconductor manufacturing provide new strategy for development high-resolution photoresists.

Language: Английский

Citations

0
Enhancing performance of Ti-Zn-oxo clusters for advanced lithography: effect of vertical ionization potential on sensitivity DOI
Daohan Wang, Xiao‐Feng Gong,

Runfeng Xu

et al.

Science China Chemistry, Journal Year: 2025, Volume and Issue: unknown

Published: April 28, 2025

Language: Английский

Citations

0
Performance Optimization of Sulfonium-Functionalized Molecular Resists for EUV and Electron Beam Lithography DOI
Zhuoran Liu,

Jinping Chen,

Tianjun Yu

et al.

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 7, 2025

We report the synthesis and lithographic evaluation of a series sulfonium-functionalized molecules nonchemically amplified resists (n-CARs) designed for high-resolution lithography. These molecular resists, built upon rigid adamantane core, feature varied substitution positions (meta or para), side chains (methoxy butoxy), counteranions (CF3SO3–, BF4–, PF6–, SbF6–). Our study highlights that meta-substitution incorporation flexible butoxy significantly enhance film quality performance. Notably, ADMBu-TF resist, functionalized with CF3SO3– meta-substituted chains, exhibits best Using extreme ultraviolet lithography, we achieved 15 nm line/space (L/S) patterns line-edge roughness 2.2 nm, positioning this resist as promising candidate next-generation processes.

Language: Английский

Citations

0
Sub‐10‐nm Lithography for Sn4–Oxo Clusters: Effect of Molecular Polarity on Sensitivity and Resolution DOI

Yingdong Zhao,

Riyao Cong,

Zijian Chen

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 7, 2025

Abstract Tin‐based metal–oxo clusters have recently garnered considerable attention in high‐energy irradiation lithography because of their nanoscale patterning capabilities. However, achieving sub‐10 nm resolution remains a challenge due to uncontrolled latent image gradients after exposure. In this study, the development mechanism Sn4–oxo cluster is investigated using molecular polarity index model. Resolutions 8 and 17 are successfully achieved for Sn4‐TF electron beam (EBL) extreme ultraviolet (EUVL), respectively. A novel pre‐irradiation modification strategy proposed enhance sensitivity by one‐third both EBL EUVL. The experimental findings theoretical analysis demonstrate that deep (DUV) primarily degrades organic ligands promotes Sn–O–Sn crosslinking, whereas EUVL drive hydrocarbon crosslinking among clusters. This study deepens our understanding Sn–oxo photolithographic reaction mechanisms, offering critical insights optimizing developers enhancing sensitivity. These expected aid realization node technology.

Language: Английский

Citations

0