Intelligent flexible memristors for artificial synapses and neuromorphic computing DOI Creative Commons
Qing Mao,

Zhenqian Zhu,

Jialin Meng

et al.

FlexMat., Journal Year: 2025, Volume and Issue: unknown

Published: May 12, 2025

Abstract Memristors have garnered significant attention in the field of non‐volatile memory devices due to their excellent characteristics such as miniaturization, low power consumption, high performance, and non‐volatility. Particularly with development flexible electronics recent years, memristors shown immense potential areas neuromorphic models memristor‐based neural networks, thanks unique structural features superior electrical properties. This paper systematically reviews working principles material systems memristors, followed by a summary current research progress on memristors. It also concludes an overview applications frontier fields image recognition, wearable sensing, while briefly analyzes challenges faced future prospects. is believed that this will provide valuable guidance for more fields.

Language: Английский

2D materials-memristive devices nexus: From status quo to Impending applications DOI Creative Commons
Muhammad Muqeet Rehman, Yarjan Abdul Samad, Jahan Zeb Gul

et al.

Progress in Materials Science, Journal Year: 2025, Volume and Issue: unknown, P. 101471 - 101471

Published: Feb. 1, 2025

Language: Английский

Citations

3
Rapidly one-step fabrication of durable superhydrophobic graphene surface with high temperature resistance and self-clean DOI
Zhen Zhang,

Haozhe Chang,

Peng Wang

et al.

Journal of Colloid and Interface Science, Journal Year: 2024, Volume and Issue: 679, P. 476 - 486

Published: Sept. 30, 2024

Language: Английский

Citations

12
A novel composite film with superhydrophobic graphene for anti-icing/deicing via chemical-assisted magnetically controllable picosecond laser writing DOI

Haozhe Chang,

Zhen Zhang, Peng Wang

et al.

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101726 - 101726

Published: April 1, 2025

Language: Английский

Citations

2
Interface engineering for enhanced memristive devices and neuromorphic computing applications DOI Creative Commons
Ming Xiao, Daozhi Shen, Jijie Huang

et al.

International Materials Reviews, Journal Year: 2025, Volume and Issue: unknown

Published: March 3, 2025

Memristors, or memristive devices, have gained substantial attention as valuable building blocks for neuromorphic computing systems. Their dynamic reconfiguration enables simulation of essential analog synaptic and neuronal functionalities, making them promising candidates brain-inspired neural network computing. In recent years, conventional thin film materials low-dimensional nanomaterials been extensively explored in devices the development applications. Despite progress several technical challenges persist, such device-to-device uniformity high device density integration, requiring further improvement at single system level integration. Interface engineering, through careful design physical chemical nature interface two-terminal structure, emerges a method to address these challenges. This review highlights utilization engineering techniques optimize behavior, covering both including 0D quantum dots nanoparticles, 1D nanowire/nanotube, 2D materials, heterostructures nanoscale materials. Two main classes mechanisms involved specifically, electronic ionic modulating are described detail. Recent advancements optical artificial functionalities integration also reviewed. concludes with remaining how would be addressing issues. comprehensive serves guide atomic-scale research, while emphasizing broader potential kinetics enabling various exciting physiochemical properties reconfigurable functionalities.

Language: Английский

Citations

0
Effect of grain boundaries on metal atom migration and electronic transport in 2D TMD-based resistive switches DOI Creative Commons
Mohit D. Ganeriwala,

Daniel Luque-Jarava,

Francisco Pasadas

et al.

Nanoscale, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

This study examines metal atom migration across MoS 2 grain boundaries in vertical and lateral 2DM memristors. DFT transport simulations reveal how GBs defects affect filament formation resistive switching performance.

Language: Английский

Citations

0
Intelligent flexible memristors for artificial synapses and neuromorphic computing DOI Creative Commons
Qing Mao,

Zhenqian Zhu,

Jialin Meng

et al.

FlexMat., Journal Year: 2025, Volume and Issue: unknown

Published: May 12, 2025

Abstract Memristors have garnered significant attention in the field of non‐volatile memory devices due to their excellent characteristics such as miniaturization, low power consumption, high performance, and non‐volatility. Particularly with development flexible electronics recent years, memristors shown immense potential areas neuromorphic models memristor‐based neural networks, thanks unique structural features superior electrical properties. This paper systematically reviews working principles material systems memristors, followed by a summary current research progress on memristors. It also concludes an overview applications frontier fields image recognition, wearable sensing, while briefly analyzes challenges faced future prospects. is believed that this will provide valuable guidance for more fields.

Language: Английский

Citations

0