In-situ preparation of II & S-type hybrid heterojunction Ag2MoO4/AgCl/SiC photocatalyst from waste photovoltaic silicon for cefaclor and pharmaceutical wastewater degradation
Separation and Purification Technology,
Journal Year:
2025,
Volume and Issue:
361, P. 131465 - 131465
Published: Jan. 9, 2025
Language: Английский
Reversible Redox Probes to Determine Band‐Edge Locations and Dopant Concentrations of Nano‐TiO2 Thin‐Films: Settling the Mott‐Schottky Conundrum
Angewandte Chemie,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Nov. 6, 2024
Abstract
Knowing
the
exact
location
of
semiconductor
band‐edges
is
key
for
mechanistic
insights
into
their
use
water
and
CO
2
photo/electrocatalysis.
In
this
regard,
a
reliable
strategy
nano‐semiconductors
did
not
exist
yet.
We
demonstrate
reversible
redox
probes
on
nano‐semiconductor
electrodes
to
determine
band‐edge
locations
in
aqueous
solutions.
Rectifying
current‐potential
(i‐U)
characteristics
with
high
work
function
(i.e.
more
positive
formal
potential)
Fe(CN)
6
3−
/Fe(CN)
4−
couple
yielded
flatband
potential
at
various
pH
whereas
i‐U
low
negative
Ru(NH
3
)
3+
/Ru(NH
2+
provided
conduction
dopant
concentration
30
nm
thin‐film
n‐TiO
.
The
methodology
can
be
extended
other
serves
as
an
alternative
goes
beyond
capabilities
Mott‐Schottky
procedure
bulk
electrodes.
Language: Английский
Reversible Redox Probes to Determine Band‐Edge Locations and Dopant Concentrations of Nano‐TiO2 Thin‐Films: Settling the Mott‐Schottky Conundrum
Angewandte Chemie International Edition,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Nov. 6, 2024
Abstract
Knowing
the
exact
location
of
semiconductor
band‐edges
is
key
for
mechanistic
insights
into
their
use
water
and
CO
2
photo/electrocatalysis.
In
this
regard,
a
reliable
strategy
nano‐semiconductors
did
not
exist
yet.
We
demonstrate
reversible
redox
probes
on
nano‐semiconductor
electrodes
to
determine
band‐edge
locations
in
aqueous
solutions.
Rectifying
current‐potential
(i‐U)
characteristics
with
high
work
function
(i.e.
more
positive
formal
potential)
Fe(CN)
6
3−
/Fe(CN)
4−
couple
yielded
flatband
potential
at
various
pH
whereas
i‐U
low
negative
Ru(NH
3
)
3+
/Ru(NH
2+
provided
conduction
dopant
concentration
30
nm
thin‐film
n‐TiO
.
The
methodology
can
be
extended
other
serves
as
an
alternative
goes
beyond
capabilities
Mott‐Schottky
procedure
bulk
electrodes.
Language: Английский