Indirect In Situ Oxidization of Metallic Nanoparticles for a High‐Performance Broadband Transparent Detector by Plasmonic and Pyro‐Phototronic Coupling DOI Open Access
Thanh Tai Nguyen,

Sanh Vo Thi,

Naveen Kumar

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 25, 2024

Abstract Near‐infrared (NIR) photodetectors are valuable technological devices with numerous uses, and transforming opaque NIR into transparent ones will aid in the development of invisible interfaces for rapidly emerging technology human–computer interactions. However, typically suffer from considerable optical loss, which reduces device sensitivity. The current study enhances trade‐off between transparency sensitivity by investigating pyro‐phototronic effect, is accomplished using an ITO/Ag‐Ag(O)/ZnO/NiO/AgNWs design. design has a see‐through feature visible light transmittance 62.1%. An ultrathin Ag‐Ag(O) layer absorbs light, generating 476% more photocurrent because ZnO layer's pyroelectric effect. effect allows to be responsive diverse intensities response time 0.18 ms. metallic–semiconductor mixed‐phase properties combination produced indirectly oxidizing embedded Ag nanostructures adding oxygen during development. approach exploits plasmonic nanoparticles, improves photothermal utilization layer, resulting stronger at shorter wavelengths. Transparent sensors high broadband operation would advance image processing human augmentation.

Language: Английский

Recent Progress in Pyro-Phototronic Effect-Based Photodetectors: A Path Toward Next-Generation Optoelectronics DOI Open Access
Vishwa Bhatt, Min‐Jae Choi

Materials, Journal Year: 2025, Volume and Issue: 18(5), P. 976 - 976

Published: Feb. 21, 2025

Since photodetectors are widely used in a variety of applications, such as imaging, optical communication, security and safety, motion detection, environmental sensing, more, they crucial part many technologies. The performance has significantly improved due to the advanced development third-generation semiconducting materials caused by novel pyro-phototronic effect. This effect; induced localized heating under pulsed incident light, enhances generation, separation, collection charge carriers within photodetectors. combined pyroelectric photoelectric effects resulting from this process collectively termed It is understand how effect affects optoelectronic processes that take place during photodetection. review addresses latest advancements photodetector presenting for range semiconductors. We provide comprehensive summary different outline recent developments

Language: Английский

Citations

0
A programmable logic gate constructed with Ga2O3/CdS self-powered photodetector based on the pyro-phototronic effect: A new avenue for achieving secure encrypted optical communication DOI
Junjie He, Shujie Jiao,

Chenyang Tao

et al.

Chemical Engineering Journal, Journal Year: 2025, Volume and Issue: unknown, P. 162392 - 162392

Published: April 1, 2025

Language: Английский

Citations

0
Indirect In Situ Oxidization of Metallic Nanoparticles for a High‐Performance Broadband Transparent Detector by Plasmonic and Pyro‐Phototronic Coupling DOI Open Access
Thanh Tai Nguyen,

Sanh Vo Thi,

Naveen Kumar

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 25, 2024

Abstract Near‐infrared (NIR) photodetectors are valuable technological devices with numerous uses, and transforming opaque NIR into transparent ones will aid in the development of invisible interfaces for rapidly emerging technology human–computer interactions. However, typically suffer from considerable optical loss, which reduces device sensitivity. The current study enhances trade‐off between transparency sensitivity by investigating pyro‐phototronic effect, is accomplished using an ITO/Ag‐Ag(O)/ZnO/NiO/AgNWs design. design has a see‐through feature visible light transmittance 62.1%. An ultrathin Ag‐Ag(O) layer absorbs light, generating 476% more photocurrent because ZnO layer's pyroelectric effect. effect allows to be responsive diverse intensities response time 0.18 ms. metallic–semiconductor mixed‐phase properties combination produced indirectly oxidizing embedded Ag nanostructures adding oxygen during development. approach exploits plasmonic nanoparticles, improves photothermal utilization layer, resulting stronger at shorter wavelengths. Transparent sensors high broadband operation would advance image processing human augmentation.

Language: Английский

Citations

1