High-performance, broadband, and self-driven photodetector based on MoTe2 homojunction with asymmetrical contact interfaces

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(9)

Published: March 1, 2025

The van der Waals junction of two-dimensional materials has the characteristics weak interlayer interaction and strong light–mass interaction. internal electric field formed at interface Van promotes separation efficient transfer photogenerated carriers, showing low power consumption, self-drive, high responsiveness, ultrafast response. Therefore, we fabricate a transverse homojunction photodetector by mechanical stripping. Furthermore, considering influence contact between two sides metal electrodes, select electrodes corresponding to matching work function according Fermi level with different thicknesses MoTe2, anti-barrier layers are obtained. Finally, self-driven Au-thin MoTe2-thick MoTe2–Ni/Au structure is fabricated, which improves photosensitivity response time, broadens spectral detection range. When Vds = 0 V, rectifier ratio increases 4.6 × 103, 50 times higher than that symmetrical electrode homojunction. Under zero bias voltage, when spot area 3 10−9 m2, reaches 28 mA/W (637 nm), time 38.83/40.17 μs, infrared extended 1550 nm. It potential applications in optoelectronics optical signal detection.

Language: Английский

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Ultraviolet to Near-Infrared Polarization-Sensitive Photodetectors Based on (Phenethylammonium)₂PbI₄/PdSe₂ Nanosheet Heterojunctions

ACS Applied Nano Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 19, 2025

Two-dimensional (2D) Ruddlesden–Popper perovskites have demonstrated significant potential in high-performance optoelectronic devices due to their exceptional properties and remarkable stability. However, research on photodetection 2D perovskite/PdSe2 nanosheet heterojunction structures remains limited. In this work, a stable photodetector with high responsivity based heterostructure of perovskite (PEA)2PbI4 PdSe2 nanosheets is demonstrated. The device performance reveals that photodetectors fabricated 191 nm-thick 2.5 provide broadband detection from ultraviolet near-infrared regions offer tunable photoresponse profiles. Specifically, under 532 nm illumination 1 V bias, the achieves 1.81 A/W specific detectivity 5.53 × 1011 Jones. also demonstrates ultrafast transient response speeds at microsecond scale, outperforming single by approximately 2 orders magnitude. Furthermore, it maintains excellent stability less than 5% photocurrent degradation after continuous cycling over thousands cycles. Notably, owing in-plane lattice asymmetry PdSe2, exhibits sensitivity linearly polarized visible light, achieving linear dichroism ratios (Imax/Imin) 1.05 1.12 405 nm, respectively. capability polarization imaging wavelengths was achieved through self-constructed platform. This work holds implications for advancing material heterojunctions, nanomaterial-based optoelectronics, photodetectors.

Language: Английский

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Polarization Reversal Enhanced Intelligent Recognition in Two-Dimensional MoTe2/GeSe Heterostructure

Chip, Journal Year: 2025, Volume and Issue: unknown, P. 100143 - 100143

Published: March 1, 2025

Language: Английский

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Polarization-Sensitive and Self-Driven Photodetector Based on 2D PdSe₂/InSe Asymmetric van der Waals Heterojunction with Vertical Transportation Channel

The Journal of Physical Chemistry Letters, Journal Year: 2025, Volume and Issue: unknown, P. 3769 - 3777

Published: April 7, 2025

Polarized photodetectors are promising in civil and military fields. Limited response range low integration level critical challenges which can be solved by the introduction of a 2D asymmetric vertical heterojunction. Vertical structure design has advantages higher shorter channel length. In this work, PdSe2/InSe heterojunction is constructed with an short transportation for polarization-sensitive self-driven photodetection. The device exhibits excellent photoresponse characteristics, including wide spectral spanning from 405 to 980 nm, high responsivity 296 mA/W, specific detectivity 1.97 × 1011 Jones. It also demonstrates photovoltaic performance notable open-circuit voltage reaching 480.6 mV remarkable polarization sensitivity. Finally, integrated into polarized light imaging system successfully. This finding underscores role advancing compact, high-performance, broadband, photodetectors.

Language: Английский

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Wavelength‐Dependent Bipolar Photoresponse Enabled All‐in‐One Optoelectronic Logic Gates on Epitaxial GaSe/GaN 2D‐3D Hybrid Heterojunctions

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 11, 2025

Abstract The growing demand for information processing and transmission requires high‐performance device platforms efficient computing telecommunications. Optoelectronic logic devices are promising candidates next‐generation in‐sensor units, owing to their intrinsically high optical gain speed. However, reliable all‐in‐one optoelectronic gates that integrate all logical operations into a single still lacking. Herein, new architecture is reported an fabricated using large‐scale epitaxial GaSe/GaN heterojunction. functioning mechanism of such based on the unique wavelength‐dependent bipolar photoresponse originating from competition between photovoltaic photothermoelectric effects, which can be tuned by film thickness. GaSe films epitaxially grown GaN substrate physical vapor deposition in ultrahigh‐vacuum environment, guarantees atomically clean interface. demonstrates superior performance with detectivity 4 × 10 12 Jones on‐off ratio 3 . All seven gates, “AND,” “OR,” “NOT,” “XOR,” “NOR,” “XNOR,” “NAND,” have been performed via modulation within device. This study provides novel approach fabricating multifunctional gates.

Language: Английский

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SnSe/MoS₂ Van der Waals Heterojunction for Ultrasensitive and Broadband Photodetection

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 18, 2025

Abstract Broadband photodetectors capable of detecting light from ultraviolet (UV) to near‐infrared (NIR) wavelengths are crucial for advanced optoelectronic applications. Here, the fabrication and characterization a SnSe/MoS 2 van der Waals heterojunction photodetector with exceptional broadband sensitivity ultrahigh responsivity reported. Theoretical calculations experimental analyses reveal type‐II band alignment in heterojunction, enabling efficient charge separation transport. The demonstrates high current on/off ratio (≈10 3 ) outstanding responsivity, achieving 518 A W −1 at 380 nm, 540 600 25 900 nm under 1 V bias. Furthermore, device exhibits specific detectivity up 1.93 × 10 12 cm Hz 1/2 ·W an external quantum efficiency exceeding 195 000%. Raman spectroscopy atomic force microscopy confirm quality SnSe MoS films successful formation heterojunction. Time‐dependent photoresponse power‐dependent measurements demonstrate stable, repeatable performance across UV, visible, NIR spectra. This work highlights as promising platform broadband, energy‐efficient photodetection, offering significant potential applications optical communication, imaging, sensing technologies.

Language: Английский

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Multicolor and Polarization-Sensitive Photodetection of α-In₂Se₃/2H-MoTe₂ vdW Heterostructure for Imaging and Optical Communication

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: May 17, 2025

Polarization-sensitive photodetection across multiple wavelengths holds great potential for advanced optoelectronic applications. Traditional polarization photodetectors require complex polarizers and lens system, while emerging van der Waals (vdW) heterojunction still face performance limitations. Here, we present a vdW-stacked α-In2Se3/2H-MoTe2 heterostructure, enabling multicolor polarization-sensitive the visible near-infrared (NIR) spectral ranges. A peak responsivity of 3.7 A·W-1, specific detectivity 5.1 × 109 Jones, external quantum efficiency 486%, response time ∼6 ms are demonstrated at NIR wavelength 940 nm, facilitated by efficient photocarriers separation within built-in electric field in heterostructure region, as confirmed high-spatial-resolution photocurrent mappings. The sensitivity with ratios 1.40 638 nm 1.07 1550 is also verified, imaging high resolution. Furthermore, photodetector can act an optical signal receiver, high-fidelity encoded communication. Leveraging intrinsic material properties field-tunability vdW heterostructures provides promising pathway next-generation high-performance multifunctional photodetectors.

Language: Английский

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Polarization‐Sensitive Photosynapse Based on PdSe₂/WS₂ Heterostructure for Visible‐Infrared Broadband Artificial Vision System

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 8, 2025

Abstract Polarization‐sensitive visual systems with adaptability enable organisms to accurately perceive the external world very even in a rapidly variable environment and efficiently process information. However, most of current polarization‐sensitive adaptive devices are based on individual materials exhibiting low performance high power consumption which hinder their practical integrated applications. In this paper, visible‐infrared broadband synaptic device PdSe 2 /WS heterojunction is proposed constructed for an artificial vision system. The shows extremely dark 0.31 nA, excellent polarization detection capability 488–1550 nm wavelengths sensitivity 10.55 under 980 nm. exhibits high‐resolution imaging, optical communication, image convolution processing capabilities. addition, it successfully simulates range behaviors PPF index 138% achieves bias voltage modulation. It noteworthy that strong brain‐like learning memory ability, realizes simulation recognition neural This work provides promising avenue design high‐performance photoelectric synapses good application prospect new generation intelligent perception systems.

Language: Английский

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