Intrinsically Stretchable Resistive Memory Devices Utilizing Wavy Structured Strategy Integrated with Metal‐Organic Framework Glasses DOI
Yanqi Zhao, Xinyu Li, Yuan‐Biao Huang

et al.

Small Methods, Journal Year: 2025, Volume and Issue: unknown

Published: April 8, 2025

Abstract Flexible resistive random‐access memory (RRAM) holds significant promise for data storage applications in the realms of smart healthcare and wearable devices. However, most research has focused primarily on development stretchable electrodes, frequently neglecting mechanical compatibility between functional layer electrode. Consequently, advancement intrinsically memristors presents a substantial challenge. Herein, glassy metal‐organic framework (MOF) film with wrinkle structure is integrated pre‐stretched electrode to fabricate memristors. These devices demonstrate an impressive switching ratio up 10 5 , bending radius limit mm, strain 20%, all while maintaining stable characteristics. Furthermore, conductive atomic force microscope (C‐AFM) ion beam (FIB) techniques reveal that effect governed by silver filament mechanism. This work successfully developed memristor, paving way application MOFs as layers flexible electronics. It expected inspire further design high‐performance, electronic technologies.

Language: Английский

Bimetallic Ln (III)-MOF (Ln = Gd, Tb) materials with excitation wavelength-dependent luminescence properties for advanced anti-counterfeiting DOI
Wei Gao, Zihan Chen, Lu Zhang

et al.

Optical Materials, Journal Year: 2025, Volume and Issue: unknown, P. 117084 - 117084

Published: April 1, 2025

Language: Английский

Citations

0
Intrinsically Stretchable Resistive Memory Devices Utilizing Wavy Structured Strategy Integrated with Metal‐Organic Framework Glasses DOI
Yanqi Zhao, Xinyu Li, Yuan‐Biao Huang

et al.

Small Methods, Journal Year: 2025, Volume and Issue: unknown

Published: April 8, 2025

Abstract Flexible resistive random‐access memory (RRAM) holds significant promise for data storage applications in the realms of smart healthcare and wearable devices. However, most research has focused primarily on development stretchable electrodes, frequently neglecting mechanical compatibility between functional layer electrode. Consequently, advancement intrinsically memristors presents a substantial challenge. Herein, glassy metal‐organic framework (MOF) film with wrinkle structure is integrated pre‐stretched electrode to fabricate memristors. These devices demonstrate an impressive switching ratio up 10 5 , bending radius limit mm, strain 20%, all while maintaining stable characteristics. Furthermore, conductive atomic force microscope (C‐AFM) ion beam (FIB) techniques reveal that effect governed by silver filament mechanism. This work successfully developed memristor, paving way application MOFs as layers flexible electronics. It expected inspire further design high‐performance, electronic technologies.

Language: Английский

Citations

0