Surface Vibration‐Mediated and Multiphonon Relaxation‐Assisted Antithermal‐Quenching Shortwave Infrared Emission in Ho‐Based Double Perovskite With Long Lifetime DOI

Qiudong Duan,

Yu Zha,

Yusheng Xu

et al.

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 9, 2024

Abstract Thermal quenching generally predominates in Er 3+ 1540 nm luminescence at elevated temperatures, due to intensified lattice vibration and efficient overtone vibrational relaxation by O─H stretch. This issue impedes practical device applications of shortwave infrared Er‐doped phosphors. Herein, with the mediation surface phonons, anti‐thermal emission is reported (220)‐dominated ‐doped Cs 2 NaHoCl 6 double perovskite. The downshifting emissions can be boosted rising temperatures from 303 543 K, reaching 225%@483 K initial intensity accompanied a long lifetime 33.02 ms 483 K. By combining temperature‐dependent situ Raman Fourier transform spectroscopies excited‐state dynamics results, coordination role water molecules verified, serving as promoters instead quenchers on (220) facet high temperatures. Furthermore, energy transfer Ho enables intense photoluminescence quantum yield 78.1% under 450 excitation. Finally, compact thermally stable phosphor‐converted light‐emitting diode (LED) designed narrowband light source blue LED chip. work pushes improved understanding achieving thermal‐enhanced for potential broad applications.

Language: Английский

Tuning Hot-Carrier Temperature in CsPbBr3 Perovskite Nanoplatelets through Metal Halide Passivation DOI
Srimanta Gogoi, Saikat Das, Ruchir Gupta

et al.

The Journal of Physical Chemistry Letters, Journal Year: 2025, Volume and Issue: unknown, P. 3832 - 3839

Published: April 8, 2025

High carrier temperature and slow cooling make perovskite nanostructures potential candidates for hot-carrier solar cells. Here, using time-resolved photoluminescence spectroscopy, dynamics is reported in strongly confined three-monolayer quasi-2D CsPbBr3 nanoplatelets characterized by sharp excitonic peaks the absorption spectrum narrow emission blue region. Treatment with a PbBr2-ligand solution resulted remarkable seven-fold increase intensity, attributed to effective passivation of surface defects due lead(II) bromide vacancies. Further investigations spectroscopy revealed consistent times ∼300 fs both pristine treated nanoplatelets, indicating similar fundamental processes. Notably, exhibited higher (∼700 K), linked increased radiative density after defect passivation. This work demonstrates that treatment metal halides substantially improves optoelectronic properties. temperatures can be significantly while preserving time.

Language: Английский

Citations

0
3D Chiral Metal Halide Semiconductors DOI Creative Commons
Marco Moroni, Luca Gregori,

Clarissa Coccia

et al.

ACS Energy Letters, Journal Year: 2025, Volume and Issue: unknown, P. 2906 - 2912

Published: May 21, 2025

Citations

0
Near-infrared responsive photocatalysts for environmental remediation and energy conversion: A review DOI
Jiaming Li,

Yuan Li,

Dmitry Selishchev

et al.

Chemosphere, Journal Year: 2024, Volume and Issue: 367, P. 143599 - 143599

Published: Oct. 22, 2024

Language: Английский

Citations

3
Lead‐Free Perovskite Light‐Emitting Diodes DOI Open Access
Weidong Tang, Shengnan Liu, Gan Zhang

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 24, 2024

Abstract Metal halide perovskites have been identified as a promising class of materials for light‐emitting applications. The development lead‐based perovskite diodes (PeLEDs) has led to substantial improvements, with external quantum efficiencies (EQEs) now surpassing 30% and operational lifetimes comparable those organic LEDs (OLEDs). However, the concern over potential toxicity lead motivated search alternative that are both eco‐friendly possess excellent optoelectronic properties, lead‐free emerging strong contender. In this review, properties various emitters analyzed, particular emphasis on more well‐reported tin‐based variants. Recent progress in enhancing device through refined crystallization processes optimization configurations is also discussed. Additionally, remaining challenges examined, propose strategies may stable operation. Looking forward, future developments PeLEDs considered, including extension spectral range, adoption deposition techniques, exploration materials.

Language: Английский

Citations

3
1.4% External Quantum Efficiency 988 nm Light Emitting Diode Based on Tin‐Lead Halide Perovskite DOI Creative Commons
Jiale Chen, Jiaxiong Li, Riccardo Pau

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 20, 2024

Abstract In recent years, metal halide perovskite‐based light‐emitting diodes (LEDs) have garnered significant attention as they display high quantum efficiency, good spectral tunability, and are expected to low processing costs. When the peak emission wavelength is beyond 900 nm interest even higher because of critical importance this for biomedical imaging, night vision, sensing. However, many challenges persist in fabricating these high‐performance NIR LEDs, particularly wavelengths above 950 nm, which appear be limited by radiance poor stability. study, 3‐(aminomethyl) piperidinium (3‐AMP) employed a bulk additive tin‐lead perovskite. The 3‐AMP passivated films exhibit significantly longer carrier lifetime over 1 µs compared neat (0.43 µs) or those with perfluorinated aromatic mono‐ammonium molecule (0.41 µs). Our optimized LEDs show single at 988 an external efficiency (EQE) ≈1.4%.

Language: Английский

Citations

3
How Shallow and Deep Defects Drive Carrier Dynamics in Tin‐Iodide Perovskites DOI Creative Commons
Antonella Treglia,

Andrea Olivati,

Valentino Romano

et al.

Advanced Energy Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 23, 2025

Abstract Tin‐halide perovskites (THP) exhibit complex carrier dynamics due to the interplay between electronic doping and trapping, both of which affect device performance. Evaluating impact trap states is challenging because timescales photogenerated electron recombination with dopant holes trapping often overlap. Here, Transient Absorption Spectroscopy (TAS) used across a broad spectral temporal range, spanning from visible near‐infrared femtoseconds microseconds, probe sub‐bandgap band‐edge transitions, while manipulating defect densities via chemical treatments. Focusing on tin triiodide perovskites, rapid high density considered main source loss. However, deep originated by two distinct type defects are identified: surface Sn(IV) interstitials. Surface play key role in loss photo‐generated carriers, but their can be mitigated addition SnF 2 , improving lifetimes. Nevertheless, excessive promotes stabilization interstitial traps, highlighting delicate balance control. Moreover, TAS reveals transitions associated shallow contribute repopulation within tens picoseconds. This work disentangles contributions trap‐mediated processes optoelectronic mechanisms THP, offering insights into management for performance optimization.

Language: Английский

Citations

0
Fully‐Solution‐Processed Inverted Near‐Infrared LEDs Enabled by Wavelength‐Tunable and Oxidation‐Resistant Lead‐Tin Perovskite DOI
Zihang Peng,

Shuai‐Hao Xu,

Wei‐Zhi Liu

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 6, 2025

Abstract Compared to APbI 3 ‐based perovskites (A = Cs + , MA FA ), ASnI exhibit longer emission wavelengths and lower toxicity, emerging as promising candidates for near‐infrared light‐emitting diodes (NIR‐LEDs). However, the electroluminescence of perovskite LEDs remain below 950 nm, face challenge extreme susceptibility Sn 2+ oxidation. In this study, fabrication high‐performance NIR‐LEDs using hybrid Pb‐Sn (FAPb x 1−x I ) are demonstrated with tunable from 800 958 nm by optimizing Pb:Sn ratios. Furthermore, 5‐aminovaleric acid (5‐AVA) an antioxidant is introduced, which capable suppressing oxidation enhancing stability optoelectronic performance films. The optimized FAPb 0.5 NIR LED exhibits peak at a maximum external quantum efficiency (EQE) 2.5%, representing record band‐edge‐emitting above nm. This work highlights potential efficient light sources, paving way their application in next‐generation devices.

Language: Английский

Citations

0
Structural and optical properties of semi-conductor organic–inorganic hybrid components ([N(CnH2n+1)4]2SnBr6 (n = 1;2)): Potential applications in solar cells, LEDs and photodetectors DOI
Kh. Ben Brahim,

Hannachi Nejeh,

N. Weslati

et al.

Inorganic Chemistry Communications, Journal Year: 2024, Volume and Issue: unknown, P. 113555 - 113555

Published: Nov. 1, 2024

Language: Английский

Citations

2
Surface Vibration‐Mediated and Multiphonon Relaxation‐Assisted Antithermal‐Quenching Shortwave Infrared Emission in Ho‐Based Double Perovskite With Long Lifetime DOI

Qiudong Duan,

Yu Zha,

Yusheng Xu

et al.

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 9, 2024

Abstract Thermal quenching generally predominates in Er 3+ 1540 nm luminescence at elevated temperatures, due to intensified lattice vibration and efficient overtone vibrational relaxation by O─H stretch. This issue impedes practical device applications of shortwave infrared Er‐doped phosphors. Herein, with the mediation surface phonons, anti‐thermal emission is reported (220)‐dominated ‐doped Cs 2 NaHoCl 6 double perovskite. The downshifting emissions can be boosted rising temperatures from 303 543 K, reaching 225%@483 K initial intensity accompanied a long lifetime 33.02 ms 483 K. By combining temperature‐dependent situ Raman Fourier transform spectroscopies excited‐state dynamics results, coordination role water molecules verified, serving as promoters instead quenchers on (220) facet high temperatures. Furthermore, energy transfer Ho enables intense photoluminescence quantum yield 78.1% under 450 excitation. Finally, compact thermally stable phosphor‐converted light‐emitting diode (LED) designed narrowband light source blue LED chip. work pushes improved understanding achieving thermal‐enhanced for potential broad applications.

Language: Английский

Citations

1