Hybrid-Protected Perovskite Quantum Dot Films with Ultra-High Efficiency and Stability for LED Backlighting DOI Creative Commons
Loan Thi Ngo, Wen‐Tse Huang, Hemant Verma

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 19, 2024

All-inorganic lead halide perovskite quantum dots (PQDs) have emerged as highly promising materials for photonic and optoelectronic devices, solar cells, photocatalysts. However, PQDs encounter instability color separation issues because of ion diffusion. Current strategies mainly address stability in green CsPbBr3 PQDs, with limited focus on the red-mixed their inferior compared PQDs. Our study provides a new dual-protection methodology synthesizing high-efficiency red mixed-halide PQD films. Red CsPb(Br0.4I0.6)3 are embedded silicone resin then incorporated poly(methyl methacrylate) (PMMA) matrix to form PQDs@silicone/PMMA The high photoluminescence yield (PLQY) great recorded pure-red polymer film. ultrabright film was also successfully fabricated an outstanding PLQY beyond 94%. These films exhibited enhanced against thermal environmental degradation, attributed dense protective layer PMMA matrices by formation Si–halide Pb–O bonds, thereby reducing surface defects. Theoretical calculations reveal that combining improves interactions, eliminating uncoordinated Pb2+ enhancing stability. Applied white light-emitting diodes (WLEDs), these demonstrated broad gamut 143.4%, indicating potential efficient WLED backlighting.

Language: Английский

High-Performance CsPbBr3 Quantum Dot/ZTO Heterojunction Phototransistor with Enhanced Stability and Responsivity DOI
Min Guo, Jia Li, Xingyu Zhang

et al.

The Journal of Physical Chemistry Letters, Journal Year: 2025, Volume and Issue: unknown, P. 1634 - 1643

Published: Feb. 5, 2025

Although all inorganic metal halide perovskite quantum dots (QDs) have shown great potential in photodetectors, many reported devices still suffer from low responsivity due to poor mobility and high defect densities. To overcome these challenges, heterojunction structures that separate electron hole pathways emerged as a promising approach improve the by reducing radiative recombination. Two-dimensional materials such graphene MoS2 been integrated with perovskites enhance performance; however, often lead dark-state currents, which hinder on/off ratios photodetectors. Hence, identifying alternative functional can complement QDs while minimizing drawbacks is critical. Amorphous oxide semiconductors, zinc tin (ZTO), attracted attention high-performance channel thin-film transistors (TFTs) their field-effect mobility, thermal stability, ability be processed at temperatures over large areas. However, ZTO suffers persistent photoconductivity (PPC) caused oxygen vacancies, leads slow response times prolonged conductivity after light exposure, thereby limiting its effectiveness optoelectronic devices. In this work, we demonstrate phototransistor using planar structure composed of CsPbBr3 via simple solution-processing method. This device exhibits 103 A/W, specific detectivity 7.0 × 1014 Jones, an ratio 5 104 under 390 nm illumination intensity 0.03 mW/cm2. The combination offers significant improvements lack either layer, showcasing superior performance compared most

Language: Английский

Citations

1
Spray-Drying Fabrication of Perovskite Quantum-Dot-Embedded Polymer Microspheres for Display Applications DOI Creative Commons

Yuyu Jing,

Rongjian Zhang,

Dengbao Han

et al.

Engineering, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Language: Английский

Citations

0
Unveiling the Visible-light-driven Photocatalytic Aptitude of Nanostructured MgO Semiconductor Synthesized Using Lemon Peel Extract DOI
Nissren Tamam, Manjiri A. Mahadadalkar, Muhammad Aadil

et al.

Ceramics International, Journal Year: 2025, Volume and Issue: unknown

Published: March 1, 2025

Language: Английский

Citations

0
Coupling Light into Memristors: Advances in Halide Perovskite Resistive Switching and Neuromorphic Computing DOI Creative Commons

Zijian Feng,

Jintao Wang,

Fandi Chen

et al.

Small Methods, Journal Year: 2025, Volume and Issue: unknown

Published: April 25, 2025

Abstract Resistive switching memristor is an emerging nonvolatile memory technology designed to overcome the physical limitations of conventional systems and performance bottleneck von Neumann architecture. Notably, halide perovskite (HP)‐based memristors have gained significant attention in recent years due their unique ionic migration behavior exceptional photoelectric properties. This review highlights HP‐based resistive switching, focusing on its developments coupling light into discussing implications for neuromorphic computing. The mechanisms are explored alongside role HP properties enhancing dynamics. advantages applications light‐coupled including reduced voltage, enhanced operation reliability, multilevel capability, development light‐integrated artificial synapses discussed comprehensively. By fully harnessing optoelectronic HPs, this field may pave way innovative approaches technologies light‐responsive systems.

Language: Английский

Citations

0
Surface manipulation and engineering strategies for high-performance and multi-functional perovskite colloidal quantum dot solar cells DOI

Jigeon Kim,

Taegyun Kwon, Younghoon Kim

et al.

Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: unknown, P. 155674 - 155674

Published: Sept. 1, 2024

Language: Английский

Citations

3
Hybrid-Protected Perovskite Quantum Dot Films with Ultra-High Efficiency and Stability for LED Backlighting DOI Creative Commons
Loan Thi Ngo, Wen‐Tse Huang, Hemant Verma

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 19, 2024

All-inorganic lead halide perovskite quantum dots (PQDs) have emerged as highly promising materials for photonic and optoelectronic devices, solar cells, photocatalysts. However, PQDs encounter instability color separation issues because of ion diffusion. Current strategies mainly address stability in green CsPbBr3 PQDs, with limited focus on the red-mixed their inferior compared PQDs. Our study provides a new dual-protection methodology synthesizing high-efficiency red mixed-halide PQD films. Red CsPb(Br0.4I0.6)3 are embedded silicone resin then incorporated poly(methyl methacrylate) (PMMA) matrix to form PQDs@silicone/PMMA The high photoluminescence yield (PLQY) great recorded pure-red polymer film. ultrabright film was also successfully fabricated an outstanding PLQY beyond 94%. These films exhibited enhanced against thermal environmental degradation, attributed dense protective layer PMMA matrices by formation Si–halide Pb–O bonds, thereby reducing surface defects. Theoretical calculations reveal that combining improves interactions, eliminating uncoordinated Pb2+ enhancing stability. Applied white light-emitting diodes (WLEDs), these demonstrated broad gamut 143.4%, indicating potential efficient WLED backlighting.

Language: Английский

Citations

0