Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

Chemical Reviews, Journal Year: 2022, Volume and Issue: 122(11), P. 10319 - 10392

Published: April 12, 2022

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances have promoted ambitious requirement to build intelligent systems that can be controlled external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) channels made two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy capability integration. With atomic thickness, 2D restrict carrier flow within material surface expose it directly environment, leading efficient signal acquisition conversion. This review summarizes latest 2D-materials-based FET (2D FET) sensors a comprehensive manner contains material, operating principles, fabrication technologies, proof-of-concept applications, prototypes. First, brief description background fundamentals is provided. subsequent contents summarize physical, chemical, biological their applications. Then, we highlight challenges commercialization discuss corresponding solution techniques. following section presents systematic survey recent progress developing commercial Lastly, long-standing efforts prospective future development FET-based toward commercialization.

Language: Английский

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Modeling Interfacial Interaction between Gas Molecules and Semiconductor Metal Oxides: A New View Angle on Gas Sensing

Advanced Science, Journal Year: 2022, Volume and Issue: 9(33)

Published: Sept. 18, 2022

Abstract With the development of internet things and artificial intelligence electronics, metal oxide semiconductor (MOS)‐based sensing materials have attracted increasing attention from both fundamental research practical applications. MOS possess intrinsic physicochemical properties, tunable compositions, electronic structure, are particularly suitable for integration miniaturization in developing chemiresistive gas sensors. During processes, dynamic gas–solid interface interactions play crucial roles improving sensors’ performance, most studies emphasize gas–MOS chemical reactions. Herein, a new view angle focusing more on physical during sensing, basic theory overview latest progress process molecules including adsorption, desorption, diffusion, systematically summarized elucidated. The unique mechanisms also discussed various aspects molecular interaction models, diffusion mechanism, interfacial reaction behaviors, where structure–activity relationship behavior overviewed detail. Especially, surface adsorption–desorption dynamics evaluated, their potential effects performance elucidated regulation perspective. Finally, prospect further directions processes sensors is discussed, aiming to supplement approaches high‐performance

Language: Английский

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Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Nano-Micro Letters, Journal Year: 2023, Volume and Issue: 15(1)

Published: Jan. 18, 2023

Abstract As an outstanding representative of layered materials, molybdenum disulfide (MoS 2 ) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits logical electronics, flexible focal-plane photodetector. However, to realize all-aspects application MoS , research obtaining high-quality large-area films need be continuously explored promote industrialization. Although grain size already improved from several micrometers sub-millimeters, growth wafer-scale is still great challenge. Herein, this review mainly focuses evolution by including chemical vapor deposition, metal–organic thermal conversion technology methods. The state-of-the-art optimization mechanism, nucleation, orientation, grain, defect engineering, systematically summarized. Then, summarizes a transistor, inverter, photodetectors. Finally, current challenges perspectives are outlined for .

Language: Английский

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Recent progress of flexible NO2 and NH3 gas sensors based on transition metal dichalcogenides for room temperature sensing

Materials Today Chemistry, Journal Year: 2022, Volume and Issue: 23, P. 100726 - 100726

Published: Jan. 5, 2022

Language: Английский

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Gas sensing devices based on two-dimensional materials: a review

Nanotechnology, Journal Year: 2022, Volume and Issue: 33(25), P. 252001 - 252001

Published: March 15, 2022

Gas sensors have been widely utilized penetrating every aspect of our daily lives, such as medical industry, environmental safety testing, and the food industry. In recent years, two-dimensional (2D) materials shown promising potential prominent advantages in gas sensing technology, due to their unique physical chemical properties. addition, ultra-high surface-to-volume ratio surface activity 2D with atomic-level thickness enables enhanced absorption sensitivity. Till now, different techniques developed further boost performance materials-based sensors, various functionalization Van der Waals heterojunction formation. this article, a comprehensive review advanced devices is provided based on materials, focusing two principles charge-exchange oxygen ion adsorption. Six types typical sensor are introduced discussion latest research progress future perspectives.

Language: Английский

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2D Materials towards sensing technology: From fundamentals to applications

Sensing and Bio-Sensing Research, Journal Year: 2022, Volume and Issue: 38, P. 100540 - 100540

Published: Oct. 25, 2022

Language: Английский

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Review—Semiconductor Materials and Devices for Gas Sensors

Journal of The Electrochemical Society, Journal Year: 2022, Volume and Issue: 169(5), P. 057518 - 057518

Published: May 1, 2022

Gas sensors are frequently used for detecting toxic gases and vapors environmental control, industrial monitoring household safety. Semiconductor conductivity can be modified by doping or fine-tuned applying an electric magnetic field in ultra-wide range (10 −7 S cm −1 to 10 2 ). The conduction of semiconductor is significantly raised reduced upon the exposure external conditions, such as temperature variation, light, heat, mechanical stress chemicals. Thus, semiconductors excellent materials device structures critical sensing performance. commonly include Si, Ge, III–V, metal oxide semiconductors. Recently carbon-based gain signification attention due their unique electrical, optical properties. There two major gas sensors: resistor-based FET-based sensors. In this review, materials, sensor structure well mechanisms will systematically categorized, described explored, with focus on oxides, GaN, SiC, 2D-TMD recent progress new thoroughly reviewed summarized, a hope show trend technology.

Language: Английский

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1D and 2D Field Effect Transistors in Gas Sensing: A Comprehensive Review

Small, Journal Year: 2023, Volume and Issue: 19(15)

Published: Jan. 26, 2023

Abstract Rapid progress in the synthesis and fundamental understanding of 1D 2D materials have solicited incorporation these nanomaterials into sensor architectures, especially field effect transistors (FETs), for monitoring gas vapor environmental, food quality, healthcare applications. Yet, several challenges remained unaddressed toward fabrication FET sensors real‐field applications, which are related to properties, synthesis, integration transistor architecture. This review paper encompasses whole assortment 1D—i.e., metal oxide semiconductors (MOXs), silicon nanowires (SiNWs), carbon nanotubes (CNTs)—and 2D—i.e., graphene, transition dichalcogenides (TMD), phosphorene—materials used sensors, critically dissecting how material surface functionalization, impact on electrical versus sensing properties devices. Eventually, pros cons FETs applications discussed, pointing out weakness highlighting future directions.

Language: Английский

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Plasmon-activated NO2 sensor based on Au@MoS2 core-shell nanoparticles with heightened sensitivity and full recoverability

Sensors and Actuators B Chemical, Journal Year: 2023, Volume and Issue: 382, P. 133505 - 133505

Published: Feb. 12, 2023

Language: Английский

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Large and Uniform Single Crystals of MoS₂ Monolayers for ppb-Level NO₂ Sensing

ACS Applied Nano Materials, Journal Year: 2022, Volume and Issue: 5(7), P. 9415 - 9426

Published: June 29, 2022

Recently, unprecedented interest has been immersed toward the synthesis of two-dimensional (2D) transition metal dichalcogenides via chemical vapor deposition (CVD) system. Synthesis a uniform and large-sized monolayer MoS2 atomic thin film CVD is still major bottleneck owing to strong dependence on diverse associated growth parameters. In this work, we have proposed most viable recipe which suitable for controlling nucleation density Mo producing 90 μm-long crystal (695 × 394.8) μm2 large monolayered SiO2/Si c-plane sapphire, respectively. Moreover, sensing performance thoroughly investigated NO2 exposure at room temperature with varying response 4–57.5 100–100 ppm level. Furthermore, sensor exhibits an ultrasensitive detection limit qualification values 1.4 4.6 ppb, addition, first-principles-based functional theory employed analyze adsorption surfaces 2D monolayer. It observed that electronic band gap after reduced by 0.7 eV due molecular orbital hybridization.

Language: Английский

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