Machine Learning for Optical Anisotropy Identification of Few-Layer Black Phosphorus Based on Polarized Microscopic Images DOI
Zhihong Hu, Wei Chen, Hui Qiao

et al.

ACS Applied Nano Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 15, 2024

Black phosphorus (BP) is a layered orthorhombic crystal with uniquely arranged atoms forming crumpled honeycomb lattice. This special atomic arrangement gives BP unique optical anisotropy, which expected to be widely used in polarized optics. However, conventional image analysis study its anisotropy complex and inefficient. paper proposed machine-learning-based approach conveniently identify black phosphorus's features. Red–green–blue (RGB) values were extracted from regions of interest (ROI) consistent thickness by the detection algorithm, then data processed obtain sample eigenvalue set. Variations RGB directly reflect changes ability light. was converted grayscale, it found that they both change periodically rotation angle. Subsequently, redundant eliminated meticulously assessing feature importance, reducing generalization errors. The performance models evaluated terms accuracy, recall, F1_Score, area under receiver operating characteristic curve (AUC-ROC), all consistently above 0.9. Machine learning algorithmic can accurately classify images different angles features BP. algorithms automatically learn improve algorithms, bolstering problem-solving efficiency precision. minimizes human material resource waste experimental errors, fostering interdisciplinary synergy between materials science artificial intelligence.

Language: Английский

A review of two-dimensional inorganic materials: Types, properties, and their optoelectronic applications DOI
Nikhil Thakur, Pawan Kumar, Sanjeev Kumar

et al.

Progress in Solid State Chemistry, Journal Year: 2024, Volume and Issue: unknown, P. 100443 - 100443

Published: March 1, 2024

Language: Английский

Citations

20

CVD Synthesis of Twisted Bilayer WS2 with Tunable Second Harmonic Generation DOI
Manzhang Xu,

Hongjia Ji,

Mingwen Zhang

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: 36(19)

Published: Feb. 8, 2024

Abstract The introduction of rotational freedom by twist angles in twisted bilayer (TB) transition metal dichalcogenides (TMDCs) can tailor the inherent properties TMDCs, which provides a promising platform to investigate exotic physical properties. However, direct synthesis high‐quality TB‐TMDCs with full is significantly challenging due substantial energy barriers during crystal growth. Here, modified chemical vapor deposition strategy proposed synthesize TB‐WS 2 wide angle range from 0° 120°. Utilizing tilted SiO /Si substrate, gas flow disturbance generated furnace tube create heterogeneous concentration gradient precursor, an extra driving force for growth . Raman and photoluminescence results confirm weak interlayer coupling High‐quality periodic Moiré patterns are observed scanning transmission electron microscopy images. Moreover, owing strong correlation between nonlinear optical response structure, tunable second harmonic generation behaviors realized This approach opens up new avenue high‐crystalline‐quality pristine their potential applications devices.

Language: Английский

Citations

13

Sliding ferroelectricity in two-dimensional materials and device applications DOI

Xiaoyao Sun,

Qian Xia, Tengfei Cao

et al.

Materials Science and Engineering R Reports, Journal Year: 2025, Volume and Issue: 163, P. 100927 - 100927

Published: Jan. 11, 2025

Language: Английский

Citations

1

Unveiling lithium storage potential in Zr2C and Zr2CO2 MXenes: A study of structural stability, electronic properties, and adsorption behavior DOI
Hazem Abdelsalam, Mahmoud A.S. Sakr, Nahed H. Teleb

et al.

Materials Science and Engineering B, Journal Year: 2025, Volume and Issue: 314, P. 118017 - 118017

Published: Jan. 16, 2025

Language: Английский

Citations

1

Polar nematic phases with enantiotropic ferro- and antiferroelectric behaviour DOI
Mateusz Mrukiewicz, Michał Czerwiński, Natalia Podoliak

et al.

Journal of Materials Chemistry C, Journal Year: 2024, Volume and Issue: 12(20), P. 7214 - 7224

Published: Jan. 1, 2024

The first synthesized liquid crystal compounds with enantiotropic ferro- and antiferroelectric nematic phases.

Language: Английский

Citations

8

Intrinsic Out‐Of‐Plane and In‐Plane Ferroelectricity in 2D AgCrS2 with High Curie Temperature DOI

Jiabao Xing,

Yue Tang, Jiaxin Li

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 6, 2024

2D ferroelectric materials have attracted extensive research interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics. However, the available are scarce most of them limited by uncontrollable preparation. Herein, a novel material AgCrS

Language: Английский

Citations

5

Ferroelectric memristor and its neuromorphic computing applications DOI

Junmei Du,

Bai Sun,

Chuan Yang

et al.

Materials Today Physics, Journal Year: 2024, Volume and Issue: unknown, P. 101607 - 101607

Published: Dec. 1, 2024

Language: Английский

Citations

5

Unveiling the Ferroelectric Competition and Transition Mechanisms in Hybrid Organic-inorganic Perovskite Heterojunction DOI Creative Commons
Wenwu Li, Enlong Li, Weixin He

et al.

Research Square (Research Square), Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 7, 2025

Abstract The non-volatile spontaneous ferroelectric polarization (FE) field serves as a cornerstone for applying materials in electronic devices, yet it is frequently mitigated by charge trapping (CT) at defect sites. Achieving an effective transition between FE and CT challenging due to the inherent opposition of two mechanisms uncontrollable types materials. Here, we realized polarity-dependent competition heterojunction transistors, integrating hybrid organic-inorganic perovskite (HOIPFs) layer embedded with electron Through theoretical calculations experimental validation, demonstrate based on polarity semiconductor layer. electron-majority n-type exhibits behavior, while electron-minority p-type semiconductors exhibit mechanism. Leveraging transition, our bipolar transistors enable synergistic control volatile modulation within single device, significantly improving recognition accuracy 93.9% 3.7-fold boost training efficiency.

Language: Английский

Citations

0

Triferroic Janus Semiconducting Bilayer with Tunable Intrinsic Multiferroic Coupling for Nonvolatile Memory DOI
Hong Zhang, Chengbin Pan, Tengyue Zhang

et al.

ACS Applied Nano Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 25, 2025

Language: Английский

Citations

0

Modulating Optoelectronics Characteristics of Janus SiSSe Monolayer by Mechanical Strain DOI

Trần Thế Quang,

Nguyen Hoang Linh,

Bui Thi Hoa

et al.

Published: Jan. 1, 2025

Language: Английский

Citations

0