Interface Charge Engineering in Ferroelectric Neuristors for a Complete Machine Vision System DOI
Qinyong Dai,

Mengjiao Pei,

Jianhang Guo

et al.

The Journal of Physical Chemistry Letters, Journal Year: 2024, Volume and Issue: unknown, P. 12068 - 12075

Published: Nov. 26, 2024

The rapid advancement of artificial intelligence has driven the demand for hardware solutions neuromorphic pathways to effectively mimic biological functions human visual system. However, current machine vision systems (MVSs) fail fully replicate retinal and lack ability update weights through all-optical pulses. Here, by employing rational interface charge engineering via varying trapping layer thickness PMMA, we determine that ferroelectric polarization our neuristors can be flexibly manipulated light or electrical This capability enables dynamic modulation device's optoelectronic characteristics, facilitating a complete MVS. As front-end sensors, devices with thickest PMMA (∼32 nm) demonstrate autonomous adaptation while those thinnest (∼2 exhibit bidirectional photoresponse characteristics akin bipolar cells. Furthermore, as components back-end processor, conductances these moderate (∼12 updated linearly Our MVS, constructed neuristors, achieved an impressive recognition accuracy 93% in handwritten digit tasks under extreme lighting conditions. work offers effective strategy development energy-efficient highly integrated intelligent MVSs.

Language: Английский

Synaptic devices based on silicon carbide for neuromorphic computing DOI

B.J. Ye,

Xiao Liu, Chao Wu

et al.

Journal of Semiconductors, Journal Year: 2025, Volume and Issue: 46(2), P. 021403 - 021403

Published: Feb. 1, 2025

Abstract To address the increasing demand for massive data storage and processing, brain-inspired neuromorphic computing systems based on artificial synaptic devices have been actively developed in recent years. Among various materials investigated fabrication of devices, silicon carbide (SiC) has emerged as a preferred choices due to its high electron mobility, superior thermal conductivity, excellent stability, which exhibits promising potential applications harsh environments. In this review, progress SiC-based is summarized. Firstly, an in-depth discussion conducted regarding categories, working mechanisms, structural designs these devices. Subsequently, several application scenarios are presented. Finally, few perspectives directions their future development outlined.

Language: Английский

Citations

2
Two-Dimensional Reconfigurable Electronic and Optoelectronic Devices: From Modulation to Applications DOI

Qiman Zhang,

Ziheng Zhao, Li Tao

et al.

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101710 - 101710

Published: March 1, 2025

Language: Английский

Citations

0
Physical mechanisms and integration design of memristors DOI

Mengna Wang,

Kun Wang, Bai Sun

et al.

Materials Today Nano, Journal Year: 2025, Volume and Issue: unknown, P. 100628 - 100628

Published: April 1, 2025

Language: Английский

Citations

0
Chelated Tin Halide Perovskite for Near-Infrared Neuromorphic Imaging Array Enabling Object Recognition and Motion Perception DOI Creative Commons
Xiangyue Meng, Tianhua Liu,

Ziquan Yuan

et al.

Research Square (Research Square), Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 6, 2025

Abstract Novel neuromorphic imaging arrays integrate photonic perception, memory, and process capability, enabling intelligent with efficient spatial temporal data fusion for object recognition, enhancement, motion perception in autonomous vehicles surveillance systems, surpassing the limitations of conventional charge-coupled device (CCD) complementary metal oxide semiconductor (CMOS) image sensors. Halide perovskites hold significant promise due to their capacity simultaneously manipulate photogenerated ions electronic charges, thereby facilitating development sophisticated systems based on intrinsic material dynamics. However, limited response range (ultraviolet-visible spectrum) toxic nature lead remain unresolved perovskite-based applications. Here, we present lead-free non-toxic CH(NH2)2SnI3 (FASnI3) low-toxicity components, excellent optoelectronic properties, superior near-infrared by multi-site chelate effect bio-friendly quercetin (QR) molecules. Coupled mechanism non-equilibrium carrier strategy, (NIR) synapse FASnI3-QR perovskite films exhibited key synaptic characteristics practical applications, including quasi-linear time-dependent photocurrent generation, prolonged decay, low energy consumption. Ultimately, 12×12 real-time NIR array was successfully constructed thin-film transistor (TFT) backplanes through heterogeneous integration devices Si circuits, which enables spatiotemporal information complex environments at hardware level.

Language: Английский

Citations

0
Emerging Optoelectronic Applications of Sliding Ferroelectricity DOI Open Access
Shuang Du,

Jijian Liu,

Shoujun Zheng

et al.

Advanced Materials Technologies, Journal Year: 2025, Volume and Issue: unknown

Published: March 2, 2025

Abstract Sliding ferroelectricity, a novel type of is discovered in some van der Waals materials, where polarization switching can be achieved through in‐plane interlayer sliding. The ferroelectric involves atomic displacements during the process, which makes sliding materials advantageous terms high speed, low barriers, and fatigue resistance contrast to conventional bulk materials. specific mechanism creates an opportunity for exploring numerous practical applications such as high‐speed storage, photovoltaic effect, neuromorphic computing. In this review, recently emerging are aimed summarize prospect future developing tendency First, mechanisms typical characterization methods briefly introduced. Second, recent progress summarized including field‐effect transistors, tunneling junction, memristor, multi‐bit superconductivity, random‐access memory, ultra‐fast optical response, effect. Finally, outlook on potential provided offer insight into current challenges further development advanced optoelectronic devices based ferroelectricity.

Language: Английский

Citations

0
Chelated Tin Halide Perovskite for Near-Infrared Neuromorphic Imaging Array Enabling Object Recognition and Motion Perception in Complex Environments DOI
Xiangyue Meng, Tianhua Liu,

Ziquan Yuan

et al.

Published: April 4, 2025

Abstract Novel neuromorphic imaging arrays integrate photonic perception, memory, and process capability, enabling intelligent with efficient spatial temporal data fusion for object recognition, enhancement, motion perception in autonomous vehicles surveillance systems, surpassing the limitations of conventional charge-coupled device (CCD) complementary metal oxide semiconductor (CMOS) image sensors. Halide perovskites hold significant promise due to their capacity simultaneously manipulate photogenerated ions electronic charges, thereby facilitating development sophisticated systems based on intrinsic material dynamics. However, limited response range (ultraviolet-visible spectrum) toxic nature lead remain unresolved perovskite-based applications. Here, we present lead-free non-toxic CH(NH2)2SnI3 (FASnI3) low-toxicity components, excellent optoelectronic properties, superior near-infrared by multi-site chelate effect bio-friendly quercetin (QR) molecules. Coupled mechanism non-equilibrium carrier strategy, (NIR) synapse FASnI3-QR perovskite films exhibited key synaptic characteristics practical applications, including quasi-linear time-dependent photocurrent generation, prolonged decay, low energy consumption. Ultimately, 12×12 real-time NIR array was successfully constructed thin-film transistor (TFT) backplanes through heterogeneous integration devices Si circuits, which enables spatiotemporal information complex environments at hardware level.

Language: Английский

Citations

0
Chelated tin halide perovskite for near-infrared neuromorphic imaging array enabling object recognition and motion perception DOI Creative Commons
Tianhua Liu,

Ziquan Yuan,

Lixia Wang

et al.

Nature Communications, Journal Year: 2025, Volume and Issue: 16(1)

Published: May 7, 2025

Neuromorphic imaging arrays integrate sensing, memory, and processing for efficient spatiotemporal fusion, enabling intelligent object motion recognition in autonomous surveillance systems. Halide perovskites offer potential neuromorphic by regulating photogenerated ions charges, but lead toxicity limited response range remain key limitations. Here, we present lead-free non-toxic formamidinium tin triiodide functionalized with bio-friendly quercetin molecules via a multi-site chelate strategy, achieving favorable near-infrared optoelectronic properties. Leveraging non-equilibrium carrier the triiodide-quercetin based synapses exhibit synaptic features practical applications, including quasi-linear time-dependent photocurrent generation, prolonged decay, high stability, low energy consumption. Ultimately, 12 × real-time array is constructed on thin-film transistor backplanes, hardware-level fusion robust perception complex environments

Language: Английский

Citations

0
Interface Charge Engineering in Ferroelectric Neuristors for a Complete Machine Vision System DOI
Qinyong Dai,

Mengjiao Pei,

Jianhang Guo

et al.

The Journal of Physical Chemistry Letters, Journal Year: 2024, Volume and Issue: unknown, P. 12068 - 12075

Published: Nov. 26, 2024

The rapid advancement of artificial intelligence has driven the demand for hardware solutions neuromorphic pathways to effectively mimic biological functions human visual system. However, current machine vision systems (MVSs) fail fully replicate retinal and lack ability update weights through all-optical pulses. Here, by employing rational interface charge engineering via varying trapping layer thickness PMMA, we determine that ferroelectric polarization our neuristors can be flexibly manipulated light or electrical This capability enables dynamic modulation device's optoelectronic characteristics, facilitating a complete MVS. As front-end sensors, devices with thickest PMMA (∼32 nm) demonstrate autonomous adaptation while those thinnest (∼2 exhibit bidirectional photoresponse characteristics akin bipolar cells. Furthermore, as components back-end processor, conductances these moderate (∼12 updated linearly Our MVS, constructed neuristors, achieved an impressive recognition accuracy 93% in handwritten digit tasks under extreme lighting conditions. work offers effective strategy development energy-efficient highly integrated intelligent MVSs.

Language: Английский

Citations

0