Interface Charge Engineering in Ferroelectric Neuristors for a Complete Machine Vision System DOI
Qinyong Dai,

Mengjiao Pei,

Jianhang Guo

et al.

The Journal of Physical Chemistry Letters, Journal Year: 2024, Volume and Issue: unknown, P. 12068 - 12075

Published: Nov. 26, 2024

The rapid advancement of artificial intelligence has driven the demand for hardware solutions neuromorphic pathways to effectively mimic biological functions human visual system. However, current machine vision systems (MVSs) fail fully replicate retinal and lack ability update weights through all-optical pulses. Here, by employing rational interface charge engineering via varying trapping layer thickness PMMA, we determine that ferroelectric polarization our neuristors can be flexibly manipulated light or electrical This capability enables dynamic modulation device's optoelectronic characteristics, facilitating a complete MVS. As front-end sensors, devices with thickest PMMA (∼32 nm) demonstrate autonomous adaptation while those thinnest (∼2 exhibit bidirectional photoresponse characteristics akin bipolar cells. Furthermore, as components back-end processor, conductances these moderate (∼12 updated linearly Our MVS, constructed neuristors, achieved an impressive recognition accuracy 93% in handwritten digit tasks under extreme lighting conditions. work offers effective strategy development energy-efficient highly integrated intelligent MVSs.

Language: Английский

2D Materials‐Based Photodetectors with Bi‐Directional Responses in Enabling Intelligent Optical Sensing DOI Open Access
Jiayue Han, Wenjie Deng, Fangchen Hu

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 19, 2025

Abstract With the rapid advancement of 2D material‐based optoelectronic devices, significant progress is made in development all‐optical logic synaptic biomimetic and multidimensional detection systems. As entering to high‐speed information era, there an urgent demand for complex, compact, multifunctional, low‐energy, intelligent sensing chips. Examining evolution current technologies reveals a parallel bipolar response mechanisms‐from simple positive negative responses more intricate inhibition‐promotion dynamics with persistent characteristics. This significantly broadens their applications devices. Moreover, compared unipolar responses, complex offer greater flexibility adaptation unique one‐to‐one mapping high‐dimensional parameters such as polarization, phase, spectrum, positioning them promising candidates breakthroughs resolution. In this review, design strategies are comprehensively explored various materials, highlighting deep advanced fields. It aimed review provide broad overview bi‐directional mechanisms, offering inspiration designing next generation

Language: Английский

Citations

6
Bias‐Managed Photodetection Within Drain Interconnected Semi‐Gate Diode DOI
Yurong Jiang, Chen-Ting Liao,

Xuan Qin

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 19, 2025

Abstract Image processing has become a quintessential data‐intensive computational task, and leveraging sensors with real‐time image been focused for the development of photodetectors. However, managing responsivity normally needs an additional gate voltage, which seriously limits application in resource‐constrained edge computing. Here, bias‐dependent photodiode (BD‐PD) semi‐gate interconnecting drain based on 2D MoS 2 /CIPS heterojunction is proposed, exhibiting ability to autonomously manage photo‐electrical characteristics without any voltage. Density functional theory validates that formation type‐I band alignment channel due bias synchronizing semi‐gate, inducing anomalous bias‐depended current dark reduced while photocurrent increased as increases. The high photodetection performances are exhibited including ultra‐high photo‐to‐dark ratio over 10 6 , detectivity 8×10 14 Jones, 3454 A W −1 at 3 V, respectively. Moreover, it demonstrated bias‐dependence BD‐PD can obviously improve preprocessing optical communication. This work provides promising platform neuromorphic optoelectronics.

Language: Английский

Citations

0
Physical mechanisms and integration design of memristors DOI

Mengna Wang,

Kun Wang, Bai Sun

et al.

Materials Today Nano, Journal Year: 2025, Volume and Issue: unknown, P. 100628 - 100628

Published: April 1, 2025

Language: Английский

Citations

0
Two-Dimensional Reconfigurable Electronic and Optoelectronic Devices: From Modulation to Applications DOI

Qiman Zhang,

Ziheng Zhao, Li Tao

et al.

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101710 - 101710

Published: March 1, 2025

Language: Английский

Citations

0
Interface Charge Engineering in Ferroelectric Neuristors for a Complete Machine Vision System DOI
Qinyong Dai,

Mengjiao Pei,

Jianhang Guo

et al.

The Journal of Physical Chemistry Letters, Journal Year: 2024, Volume and Issue: unknown, P. 12068 - 12075

Published: Nov. 26, 2024

The rapid advancement of artificial intelligence has driven the demand for hardware solutions neuromorphic pathways to effectively mimic biological functions human visual system. However, current machine vision systems (MVSs) fail fully replicate retinal and lack ability update weights through all-optical pulses. Here, by employing rational interface charge engineering via varying trapping layer thickness PMMA, we determine that ferroelectric polarization our neuristors can be flexibly manipulated light or electrical This capability enables dynamic modulation device's optoelectronic characteristics, facilitating a complete MVS. As front-end sensors, devices with thickest PMMA (∼32 nm) demonstrate autonomous adaptation while those thinnest (∼2 exhibit bidirectional photoresponse characteristics akin bipolar cells. Furthermore, as components back-end processor, conductances these moderate (∼12 updated linearly Our MVS, constructed neuristors, achieved an impressive recognition accuracy 93% in handwritten digit tasks under extreme lighting conditions. work offers effective strategy development energy-efficient highly integrated intelligent MVSs.

Language: Английский

Citations

0