Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices DOI Creative Commons
Will Echtenkamp,

Brahmdutta Dixit,

Yifei Yang

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: June 4, 2025

Abstract Next‐generation memory and logic devices require perpendicular magnetic tunnel junctions (MTJs) with small cell size, long retention, most importantly, low‐power operation. Spin transfer torque (STT) spin‐orbit (SOT) mechanisms are the widely used switching for junctions, but both high write current densities, leading to significant energy consumption. Electric field control of MTJs offers a path drastically lower requirements by enabling without flow. magnetization can be realized in multiferroic heterostructures through voltage‐controlled anisotropy (VCMA) ferromagnets or exchange coupling (VCEC) between two exchange‐coupled ferromagnetic layers. In addition, these electric field‐controlled also integrated into existing STT SOT further reduce operational energy. Additionally, hybrid approaches combining VCEC SOT, as well unconventional (USOT) low‐symmetry materials, offer promising strategies field‐free, ultralow‐power switching. Moreover, atomically thin 2D van der Waals (vdW) materials provide an efficient scalable platform electric‐field‐driven manipulation. These emerging concepts push limits efficiency enable new functionalities applications beyond conventional CMOS technology.

Language: Английский

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices DOI Creative Commons
Will Echtenkamp,

Brahmdutta Dixit,

Yifei Yang

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: June 4, 2025

Abstract Next‐generation memory and logic devices require perpendicular magnetic tunnel junctions (MTJs) with small cell size, long retention, most importantly, low‐power operation. Spin transfer torque (STT) spin‐orbit (SOT) mechanisms are the widely used switching for junctions, but both high write current densities, leading to significant energy consumption. Electric field control of MTJs offers a path drastically lower requirements by enabling without flow. magnetization can be realized in multiferroic heterostructures through voltage‐controlled anisotropy (VCMA) ferromagnets or exchange coupling (VCEC) between two exchange‐coupled ferromagnetic layers. In addition, these electric field‐controlled also integrated into existing STT SOT further reduce operational energy. Additionally, hybrid approaches combining VCEC SOT, as well unconventional (USOT) low‐symmetry materials, offer promising strategies field‐free, ultralow‐power switching. Moreover, atomically thin 2D van der Waals (vdW) materials provide an efficient scalable platform electric‐field‐driven manipulation. These emerging concepts push limits efficiency enable new functionalities applications beyond conventional CMOS technology.

Language: Английский

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