Enhancing Thermal Dissipation in Amorphous Silicon Metasurfaces via Laser-Induced Crystallization DOI Creative Commons
Dongsheng Li,

Lingyun Zhang,

Chi Zhang

et al.

Advanced Devices & Instrumentation, Journal Year: 2024, Volume and Issue: 5

Published: Jan. 1, 2024

Amorphous silicon (a-Si) metasurfaces demonstrate remarkable light manipulation capabilities owing to their high refractive index and low loss characteristics. However, the thermal conductance intrinsic a-Si leads substantial heat accumulation during beam modulation, which may cause damage limit permissible intensity of incident beam. Here, laser-induced crystallization improve transport properties a-Si-based metasurface is proposed. Raman spectroscopy analysis identifies thresholds at 1.10 × 10 5 9.78 4 W/cm 2 , corresponding laser spot radii 1.30 0.54 μm, respectively. The maximum temperature rise in crystallized 52% lower than that one under identical power intensity. Furthermore, polycrystalline still maintains excellent optical response with transmission 2π phase control. These findings provide an effective strategy for augmenting dissipation amorphous systems, potentially extending utility fluence.

Language: Английский

Metaoptic Computational Imaging DOI
Charles Roques‐Carmes, Kai Wang, Yuanmu Yang

et al.

ACS Photonics, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 13, 2025

Citations

1
Metasurface-enabled small-satellite polarisation imaging DOI Creative Commons
Sarah E. Dean, Josephine Munro,

Neuton Li

et al.

Nanoscale Advances, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Polarisation imaging enhances the information available from satellite remote sensing. We present a metasurface designed for ultra-compact polarisation with error monitoring, suitable observing Earth's surface small satellites.

Language: Английский

Citations

0
Enhancing Thermal Dissipation in Amorphous Silicon Metasurfaces via Laser-Induced Crystallization DOI Creative Commons
Dongsheng Li,

Lingyun Zhang,

Chi Zhang

et al.

Advanced Devices & Instrumentation, Journal Year: 2024, Volume and Issue: 5

Published: Jan. 1, 2024

Amorphous silicon (a-Si) metasurfaces demonstrate remarkable light manipulation capabilities owing to their high refractive index and low loss characteristics. However, the thermal conductance intrinsic a-Si leads substantial heat accumulation during beam modulation, which may cause damage limit permissible intensity of incident beam. Here, laser-induced crystallization improve transport properties a-Si-based metasurface is proposed. Raman spectroscopy analysis identifies thresholds at 1.10 × 10 5 9.78 4 W/cm 2 , corresponding laser spot radii 1.30 0.54 μm, respectively. The maximum temperature rise in crystallized 52% lower than that one under identical power intensity. Furthermore, polycrystalline still maintains excellent optical response with transmission 2π phase control. These findings provide an effective strategy for augmenting dissipation amorphous systems, potentially extending utility fluence.

Language: Английский

Citations

0