Deterministic quasi-continuous tuning of phase-change material integrated on a high-volume 300-mm silicon photonics platform

Deleted Journal, Journal Year: 2024, Volume and Issue: 1(1)

Published: June 3, 2024

Abstract Programmable photonic integrated circuits (PICs) consisting of reconfigurable on-chip optical components have been creating new paradigms in various applications, such as spectroscopy, multi-purpose microwave photonics, and information processing. Among many reconfiguration mechanisms, non-volatile chalcogenide phase-change materials (PCMs) exhibit a promising approach to the future very-large-scale programmable PICs, thanks their zero static power large index modulation, leading extremely low energy consumption ultra-compact footprints. However, scalability current PCM-based PICs is still limited since they are not directly off-the-shelf commercial foundries now. Here, we demonstrate scalable platform harnessing mature reliable 300 mm silicon fab, assisted by an in-house wide-bandgap PCM (Sb 2 S 3 ) integration process. We show devices, including micro-ring resonators, Mach-Zehnder interferometers asymmetric directional couplers, with loss (~0.0044 dB/µm), phase shift (~0.012 π/µm) high endurance (>5000 switching events little performance degradation). Moreover, showcase this platform’s capability handling relatively complex structures multiple PIN diode heaters each independently controlling Sb segment. By reliably setting segments fully amorphous or crystalline state, achieved deterministic multilevel operation. An coupler two unequal-length showed four-level switching, beyond cross-and-bar binary states. further unbalanced equal-length segments, exhibiting reversible maximum 5 ( $$N+1,N=4$$ N + 1 , = 4 8 $${2}^{N},N=3$$ 2 3 equally spaced operation levels, respectively. This work lays foundation for programmability.

Language: Английский

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Ge₂Sb₂Se₄Te‐Based Optical Switch with Ultra‐High Contrast Ratio by Multilayer Fabry–Perot Cavity

Advanced Science, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 14, 2025

Abstract Optical switches always desire a high contrast ratio in optical logic circuits and communication devices. Although phase change materials are widely applied to design for their rapid change, the is still hardly achieved intrinsic loss of traditional PCMs. Here, study demonstrates an switch with ultra‐high by introducing Ge 2 Sb Se 4 Te (GSST) into multilayer film structure treated as Fabry–Perot (FP) cavity. The reflectance system can be actively tuned GSST FP resonance achieve response. By designing thicknesses each layer film, operating wavelength precisely controlled, 2410/735 (simulation/experiment) constructed near‐infrared band. development GSST‐based paves new way realize offers strategy high‐performance

Language: Английский

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Unstable States of Non-volatile Reconfigurable Photonic Device Based on Phase Change Material

Physica B Condensed Matter, Journal Year: 2025, Volume and Issue: unknown, P. 417274 - 417274

Published: April 1, 2025

Language: Английский

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Giant Near-Infrared Induced Polarization Change via a Long-Lived Hidden Phase of a Valence Tautomeric Complex

Journal of the American Chemical Society, Journal Year: 2025, Volume and Issue: unknown

Published: April 14, 2025

Light-induced polarization change has attracted significant attention due to its rapid response and nondestructive nature, positioning it as a promising candidate for next-generation molecular storage devices energy harvesting. However, achieving substantial photoconversion that results in giant changes via hidden phase under near-infrared light irradiation remains formidable challenge. In this study, we successfully synthesized novel [CrCo] complex with an enantiopure ligand. Unlike previously reported Co valence tautomeric (VT) complexes, exhibits light-induced VT (LIVT) nearly complete ratio upon 1340 nm laser. Additionally, the molecules pack P21 polar space group optimized arrangement, leading NIR-induced (1.71 μC cm-2), which surpasses of other nonferroelectric crystals. Importantly, electric measurements single-crystal X-ray analysis after revealed induced is related not only directional electron transfer but also displacement anions, render distinct metastable compared thermally approachable one. Moreover, pyroelectric measurement was first used characterize relaxation kinetics irradiation.

Language: Английский

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An ultra-low-loss compact phase-change material-based hybrid-mode interferometer for photonic memories

APL Materials, Journal Year: 2025, Volume and Issue: 13(4)

Published: April 1, 2025

We propose a novel hybrid mode interferometer (HMI) leveraging the interference of hybridized TE–TM modes in silicon-on-insulator (SOI) waveguide integrated with GeSe phase change material (PCM) layer. The SOI waveguide’s dimensions are optimized to support hybridization fundamental transverse magnetic (TM0) and first higher electric (TE1) mode. This design allows for efficient nearly equal power coupling between these two modes, resulting high-contrast when starting from amorphous PCM state. PCM’s transition induces differential modal effective index, enabling transmittance modulation. Our numerical simulations demonstrate multilevel transmission high contrast 14 dB region’s length is varied incrementally, multi-bit storage. maximized fully crystalline state an insertion loss below 0.1 dB. HMI can also operate as quasi-pure shifter partially amorphized, making it suitable Mach–Zehnder interferometers. These characteristics make proposed device promising candidate applications photonic memories neuromorphic computing.

Language: Английский

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Microheater hotspot engineering for spatially resolved and repeatable multi-level switching in foundry-processed phase change silicon photonics

Nature Communications, Journal Year: 2025, Volume and Issue: 16(1)

Published: May 9, 2025

Nonvolatile photonic integrated circuits employing phase change materials have relied either on optical switching with precise multi-level control but poor scalability or electrical seamless integration and mostly limited to a binary response. The main limitation of the latter is relying stochastic nucleation, since its random nature hinders repeatability states. Here, we show engineered waveguide-integrated microheaters achieve spatial temperature profile (i.e., hotspot) and, thus, switch deterministic areas an embedded material. We experimentally demonstrate this concept using variety foundry-processed doped-silicon silicon-on-insulator platform featuring Sb2Se3 Ge2Sb2Se4Te 27 cycles 7 repeatable levels each. further characterize microheaters' response Transient Thermoreflectance Imaging. Our microstructure engineering demonstrates evasive multi-levels single microheater device, which necessary for robust energy-efficient reprogrammable photonics in analog processing computing.

Language: Английский

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相变材料对波导不同覆盖方式的调制特性研究

Acta Optica Sinica, Journal Year: 2025, Volume and Issue: 45(9), P. 0913001 - 0913001

Published: Jan. 1, 2025

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Programmable phase change materials and silicon photonics co-integration for photonic memory applications: a systematic study

Journal of Optical Microsystems, Journal Year: 2024, Volume and Issue: 4(03)

Published: Aug. 14, 2024

The integration of phase change materials (PCMs) with photonic devices creates a unique opportunity for realizing application-specific, reconfigurable, and energy-efficient components zero static power consumption low thermal crosstalk. In particular, waveguides based on silicon or nitride can be integrated PCMs to realize nonvolatile memory cells, which are able store data in the state PCMs. We delve into performance comparison PCM-based programmable cells platforms using known (GST GSST) applications while showcasing fundamental limitations related each design terms maximum number bits that they as well their optical insertion loss. Moreover, we present comprehensive design-space exploration analyzing energy efficiency cooling time depending structure heat source. results show silicon-based strip waveguide GST is best option cell highest bit density (up 4-bits per given 6% spacing between transmission levels). addition, considering microheater top PCM deposited, multi-physics simulation source placed above gap 200 nm, tends become more energy-efficient, (for set reset) becomes significantly shorter than case where further from PCM.

Language: Английский

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用于损耗型集成光子器件的相变材料评价标准和设计策略

Science China Materials, Journal Year: 2024, Volume and Issue: 67(6), P. 2008 - 2015

Published: May 15, 2024

Language: Английский

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All-optical organic photochemical integrated nanophotonic memory: low-loss, continuously tunable, non-volatile

Optica, Journal Year: 2024, Volume and Issue: 11(9), P. 1242 - 1242

Published: July 29, 2024

Controlling changes in the optical properties of photonic devices allows integrated circuits (PICs) to perform useful functions, leading a large breadth applications communications, computing, and sensing. Many mechanisms change exist, but few allow doing so reversible, non-volatile manner. Without such mechanisms, power inefficiencies use external memory are inevitable. In this work, we propose experimentally demonstrate phase actuation silicon nitride PIC with thermally stable photochromic organic molecules vapor-deposited within slot waveguide structure. The high-core-index platform photochemical planar-resonator-based unit, which enables positive negative signal weighting permits spectroscopic analysis. We show all-optical for photonics platform, including low loss C-band, first-order photokinetics photoconversion, bidirectional scalable switching, continuous tuning. Such features critical memories analog as quantum, microwave, neuromorphic photonics, where bipolar weights, loss, precision paramount. More generally, work suggests that back-end-of-line-compatible vapor deposition into is promising introduce non-silicon-native functionality.

Language: Английский

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