Improving the Selectivity of Metal Oxide Semiconductor Sensors for Mustard Gas Simulant 2-Chloroethyl Ethyl Sulfide by Combining the Laminated Structure and Temperature Dynamic Modulation
Sensors,
Journal Year:
2025,
Volume and Issue:
25(2), P. 525 - 525
Published: Jan. 17, 2025
Insufficient
selectivity
is
a
major
constraint
to
the
further
development
of
metal
oxide
semiconductor
(MOS)
sensors
for
chemical
warfare
agents,
and
this
paper
proposed
an
improved
scheme
combining
catalytic
layer/gas-sensitive
layer
laminated
structure
with
temperature
dynamic
modulation
Mustard
gas
(HD)
MOS
sensor.
simulant
2-Chloroethyl
ethyl
sulfide
(2-CEES)
was
used
as
target
gas,
(Pt
+
Pd
Rh)@Al2O3
material,
Rh)@WO3
gas-sensitive
Rh)@Al2O3/(Pt
sensor
prepared,
tested
2-CEES
12
battlefield
environment
simulation
gases
under
modulation.
The
results
showed
that
only
obvious
characteristic
peaks
in
resistance
response
curves
HD
certain
conditions
(100-400
°C,
highest
held
1
s
lowest
2
s),
its
peak
height
reached
6.12,
which
far
higher
than
other
gases,
thus
realizing
high
2-CEES.
Meanwhile,
also
good
sensitivity,
detection
limits,
response/recovery
times,
anti-interference,
stability,
verified
feasibility
scheme.
Language: Английский
Ultrathin and porous NiO hierarchical nanosheets array for efficient detection of 2-CEES: mechanism analysis and simulation application
Duo Zhang,
No information about this author
Rui Gao,
No information about this author
Ting Li
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et al.
Applied Surface Science,
Journal Year:
2025,
Volume and Issue:
unknown, P. 163334 - 163334
Published: April 1, 2025
Language: Английский
Monolayer self-assembled film of Pd decorated In-doped SnO2 hollow nanospheres for ultrasensitive H2S MEMS gas sensors
Sensors and Actuators B Chemical,
Journal Year:
2025,
Volume and Issue:
440, P. 137845 - 137845
Published: May 7, 2025
Language: Английский
Fabrication of Oxygen Vacancy-Rich WO3 Porous Thin Film by Sputter Deposition for Ultrasensitive Mustard-Gas Simulants Sensor
Haizhen Li,
No information about this author
Cancan Yan,
No information about this author
Jun Shen
No information about this author
et al.
Sensors,
Journal Year:
2025,
Volume and Issue:
25(10), P. 3049 - 3049
Published: May 12, 2025
Exposure
to
sulfur
mustard
can
result
in
severe
injury
or
even
fatalities
humans.
Therefore,
the
development
of
reliable
and
high-performance
sensors
for
detecting
is
critical.
Herein,
WO3
thin
films
are
prepared
as
simulant
(e.g.,
2-chloroethyl
ethylsulfide,
2-CEES)
sensing
materials
using
sputter
deposition
followed
by
high-temperature
annealing.
The
2-CEES
gas
fabricated
via
porous
realize
detection
at
260
°C
with
an
impressive
limit
(15
ppb),
fast
response
(58
s),
long-term
stability,
good
selectivity.
Through
systematic
optimization
annealing
parameters,
tailored
oxygen
vacancy
concentrations
were
prepared,
facilitating
device
fabrication.
This
approach
provides
effective
strategy
batch
production
miniaturized
devices
enabling
real-time
monitoring
vesicant
agents.
Language: Английский
Crystal defects Boost cellulose conversion to C2 alcohols over Pd/WO3 catalysts
Wei Jia,
No information about this author
Wengang Liu,
No information about this author
Yuandong Cui
No information about this author
et al.
Journal of Catalysis,
Journal Year:
2024,
Volume and Issue:
unknown, P. 115860 - 115860
Published: Nov. 1, 2024
Language: Английский
Strong Metal–Support Interaction Induces Dual Reaction Sites for Ultrasensitive and Stable NO2 Detection in Extreme Environments
Yucheng Ou,
No information about this author
Bing Wang,
No information about this author
Nana Xu
No information about this author
et al.
Advanced Functional Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Oct. 31, 2024
Abstract
The
tripartite
combination
of
a
high
density
and
stability
surface
reaction
sites,
complemented
by
the
longevity
efficient
transfer
interface
carriers,
along
with
effective
adsorption
activation
target
gas
molecules,
jointly
determines
efficiency
chemiresistors.
In
this
work,
strong
metal–support
interaction
(SMSI)
Pt─Ce
3+
is
formed
NaBH
4
reduction
method
thus
prepares
metal‐dynamically
stable
Pt
NR
─CeO
2
Pt─Pt
sites.
formation
SMSI
induces
recombination
chemical
structure
CeO
causing
localization
electron‐rich
Ce
,
which
greatly
increases
charge
concentration
at
interface.
experimental
findings
bonding
catalytic
effect
optimized
mode
on
gas,
maintains
activity
20–500
°C
achieving
notable
detection
response
value
1.43
for
20
ppb
NO
.
This
work
offers
fresh
insights
into
designing
oxide
chemiresistors
customizing
sites
atomic
level.
Language: Английский