An Ultrahigh‐Contrast Violet Phosphorus Van der Waals Phototransistor DOI

Weilin Chen,

Ruan Zhang,

Mengyue Gu

et al.

Advanced Optical Materials, Journal Year: 2023, Volume and Issue: 12(2)

Published: Sept. 28, 2023

Abstract Ultrahigh‐contrast photodetection with low background noise is of critical importance for accurate image‐sensing in deep‐sea and deep‐space exploration. The state‐of‐the‐art silicon III–V semiconductor‐based photodetectors usually require extended exposure to incident light high‐quality sensing darkness, which unfortunately results large room temperature dark currents ( RT ‐ I ) deteriorates the expected imaging contrasts. Herein, a high‐performance violet phosphorus (VP) phototransistor reported by constructing trap‐free interface between VP channel hexagonal boron nitride h ‐BN) dielectric via perfect van der Waals stacking. device shows an extremely 80 fA gate‐tunable high ON/OFF ratio over 10 5 , 2–4 orders magnitude superior that conventional counterparts. A photodetector array has been fabricated demonstrate high‐contrast capability. findings effectiveness ultrahigh‐contrast applications, while also presenting exciting opportunities enhance qualities through architectures optoelectronics.

Language: Английский

Transparent CuCrO2/ZnTiO3 pn junction via perovskite LaFeO3 nano-transition layer and surface Zn0.8Cd0.2S quantum dots synergetic modification towards photoelectric enhancement DOI

Chengyu Jia,

Dingwei Wang,

Beibei He

et al.

Ceramics International, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Language: Английский

Citations

1

Emerging Violet Phosphorus Nanomaterial for Biomedical Applications DOI Open Access
Yijun Mei,

Yuanyuan Cao,

Wei Wang

et al.

Advanced Healthcare Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 10, 2025

Abstract Violet phosphorus (VP) is a allotrope first discovered by Hittorf in 1865, which has aroused more attention the biomedical field recent years attributed to its gradually unique properties. VP can be further categorized into bulk VP, nanosheets (VPNs), and quantum dots (VPQDs), chemical vapor transport (CVT), liquid‐phase/mechanical/laser exfoliation, solvothermal synthesis are common preparation approaches of VPNs, VPQDs, respectively. Compared with another (black phosphorus, BP) that once highly regarded applications, nanomaterial (namely VPNs VPQDs) not only exhibits tunable bandgap, moderate on/off current ratio, good biodegradability, but shows enhanced stability biosafety as well, allowing it promising candidate for variety applications like antibacterial therapy, anticancer biosensing disease diagnosis. In this review, classification relevant routes initially summarized, properties momentous subsequently expounded. The latest research advances emerging then introduced detail, both existing challenges future prospects also discussed.

Language: Английский

Citations

1

Efficient Optical Control of Quantum Tunneling Devices Based on Layered Violet Phosphorus DOI Open Access
Yanyong Li,

Haolong Wu,

Lyuchao Zhuang

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 13, 2025

Abstract Electron tunneling devices attract attention due to their potential applications in integrated circuits, memories, and high‐frequency oscillators. However, limited works are devoted the optical control of electron processes. The main reason is low concentration photogenerated carriers concerning equilibrium values heavy‐doped regions. In this work, violet phosphorus (VP) with a unique bilayer tubular structure supplies an excellent platform for investigating mechanisms under photo illumination. A VP‐based vertical diode made metal‐insulator‐semiconductor (MIS) stacking presented. increase current by ≈4.2 times through illumination, leading considerable rectification ratio. addition, three‐terminal field‐effect transistor (TFET) from VP flake different thicknesses also interband electrons results tunable negative differential transconductance (NDT) at room temperature. photoillumination can modulate onset NDT region variation density states Fermi level alignment channel drain region. These advance understanding transport devices, showing great exploiting novel 2D multifunctional interactions between light carriers’ tunneling.

Language: Английский

Citations

1

Zero to Three Dimension Structure Evolution from Carbon Allotropes to Phosphorus Allotropes DOI Creative Commons
Xiaohui Ye, Ming Qi, Mengzhen Chen

et al.

Advanced Materials Interfaces, Journal Year: 2022, Volume and Issue: 10(5)

Published: Dec. 23, 2022

Abstract As the promising and highly‐focused materials after silicon, carbon, phosphorus promote development of nanotechnology due to its allotropes with unique structures properties. The carbon 0D fullerene, 1D nanotube, 2D graphene stimulate investigation structures, synthesis, properties, further applications nanomaterials. Analogous is demonstrated have a rich phase diagram. fullerenes, nanotubes fibrous red phosphorus, recently black phosphorene violet analogous graphene, developed. photoelectronic properties as semiconductors, energy storage materials, biomaterials, sensors are also investigated. Great efforts dedicated studies structure, carbons phosphorus. However, there no systematic review structure compared allotropes. Herein, along possible future perspective compare in this work based on classification different dimensions.

Language: Английский

Citations

31

An Ultrahigh‐Contrast Violet Phosphorus Van der Waals Phototransistor DOI

Weilin Chen,

Ruan Zhang,

Mengyue Gu

et al.

Advanced Optical Materials, Journal Year: 2023, Volume and Issue: 12(2)

Published: Sept. 28, 2023

Abstract Ultrahigh‐contrast photodetection with low background noise is of critical importance for accurate image‐sensing in deep‐sea and deep‐space exploration. The state‐of‐the‐art silicon III–V semiconductor‐based photodetectors usually require extended exposure to incident light high‐quality sensing darkness, which unfortunately results large room temperature dark currents ( RT ‐ I ) deteriorates the expected imaging contrasts. Herein, a high‐performance violet phosphorus (VP) phototransistor reported by constructing trap‐free interface between VP channel hexagonal boron nitride h ‐BN) dielectric via perfect van der Waals stacking. device shows an extremely 80 fA gate‐tunable high ON/OFF ratio over 10 5 , 2–4 orders magnitude superior that conventional counterparts. A photodetector array has been fabricated demonstrate high‐contrast capability. findings effectiveness ultrahigh‐contrast applications, while also presenting exciting opportunities enhance qualities through architectures optoelectronics.

Language: Английский

Citations

20