Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection DOI Creative Commons
Yi Wu, Wenjie Deng, Yongzhe Zhang

et al.

Light Science & Applications, Journal Year: 2025, Volume and Issue: 14(1)

Published: April 2, 2025

Abstract Phase transitions induce significant changes in the electrical and photonic properties of materials. Ultra-sensitive photodetectors leveraging material phase can be realized near transition temperature. Photodetectors based on Ta 2 NiSe 5 , a room-temperature excitonic insulator material, exhibit exceptional performance from visible to terahertz frequencies. Specifically, range, electronic bandwidth is 360 kHz, specific detectivity (D*) reaches 5.3 × 10 11 cm·Hz 1/2 ·W −1 . The van der Waals heterostructure /WS further enhances performance.

Language: Английский

Enhanced Responsivity β-Ga2O3 Photodetectors Enabled by Direct Oxidation of Microwave-Assisted Synthesized Transition Metal Dichalcogenides DOI
Der‐Yuh Lin, Denice N. Feria, Shixian Lin

et al.

Materials Today Communications, Journal Year: 2025, Volume and Issue: unknown, P. 112114 - 112114

Published: March 1, 2025

Language: Английский

Citations

0
Excitonic insulator powers room-temperature ultra-sensitive visible to terahertz detection DOI Creative Commons
Yi Wu, Wenjie Deng, Yongzhe Zhang

et al.

Light Science & Applications, Journal Year: 2025, Volume and Issue: 14(1)

Published: April 2, 2025

Abstract Phase transitions induce significant changes in the electrical and photonic properties of materials. Ultra-sensitive photodetectors leveraging material phase can be realized near transition temperature. Photodetectors based on Ta 2 NiSe 5 , a room-temperature excitonic insulator material, exhibit exceptional performance from visible to terahertz frequencies. Specifically, range, electronic bandwidth is 360 kHz, specific detectivity (D*) reaches 5.3 × 10 11 cm·Hz 1/2 ·W −1 . The van der Waals heterostructure /WS further enhances performance.

Language: Английский

Citations

0