Electrically controlled valley polarization and anomalous valley Hall effect in GdCl2 bilayer DOI

Weixin Liu,

Yaping Wang, Li Cai

et al.

Journal of Rare Earths, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 1, 2025

Language: Английский

Enforced Symmetry Breaking for Anomalous Valley Hall Effect in Two-Dimensional Hexagonal Lattices DOI

Yongqian Zhu,

Jia‐Tao Sun, Jinbo Pan

et al.

Physical Review Letters, Journal Year: 2025, Volume and Issue: 134(4)

Published: Jan. 29, 2025

The anomalous valley Hall effect (AVHE) is a pivotal phenomenon that allows for the exploitation of degree freedom in materials. A general strategy its realization and manipulation crucial valleytronics. Here, by considering all possible symmetries, we propose rules AVHE two-dimensional hexagonal lattices. requires breaking enforced symmetry associated with different valleys or reverses sign Berry curvature. Further asymmetry operators connecting two states opposite signs These realizing manipulating are extendable to generic points momentum space. Combined first-principles calculations, realize controllable four representative systems, i.e., monolayer AgCrP_{2}Se_{6}, CrOBr, FeCl_{2}, bilayer TcGeSe_{3}. Our work provides designing valleytronic materials could facilitate experimental detection realistic applications.

Language: Английский

Citations

2
Emerging Multifunctionality in 2D Ferroelectrics: A Theoretical Review of the Interplay With Magnetics, Valleytronics, Mechanics, and Optics DOI Open Access

Yan‐Fang Zhang,

Hao Guo,

Yongqian Zhu

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: 34(51)

Published: Aug. 28, 2024

Abstract 2D ferroelectric materials present promising applications in information storage, sensor technology, and optoelectronics through their coupling with magnetics/valleytronics, mechanics, optics, respectively. The integration of ferroelectrics magnetism enhances data storage density memory devices by enabling electric‐field‐controlled magnetic states. Ferroelectric‐valley holds promise for high‐speed, low‐energy electronics leveraging the electrical control valley polarization. Ferroelectric‐strain results various polar topologies, potential high‐density technologies devices. Moreover, between optics facilitates development nonlinear photonics based on materials. This review summarizes latest theoretical progress mechanisms, including Dzyaloshinskii‐Moriya‐interaction‐induced magnetoelectric coupling, symmetry‐linked ferroelectric‐valley ferroelectric‐strain‐coupling‐generated second‐harmonic generation ferroelectric‐light interactions. current challenges future opportunities harnessing multifunctional are provided.

Language: Английский

Citations

7
Two-Dimensional Ferroelectric Materials: From Prediction to Applications DOI Creative Commons
Shujuan Jiang, Yongwei Wang, Guangping Zheng

et al.

Nanomaterials, Journal Year: 2025, Volume and Issue: 15(2), P. 109 - 109

Published: Jan. 12, 2025

Ferroelectric materials hold immense potential for diverse applications in sensors, actuators, memory storage, and microelectronics. The discovery of two-dimensional (2D) ferroelectrics, particularly ultrathin compounds with stable crystal structure room-temperature ferroelectricity, has led to significant advancements the field. However, challenges such as depolarization effects, low Curie temperature, high energy barriers polarization reversal remain development 2D ferroelectrics performance. In this review, recent progress design ferroelectric is discussed, focusing on their properties, underlying mechanisms, applications. Based work discussed we look ahead theoretical prediction applications, application nonlinear optics. experimental research could lead next-generation nanoelectronic optoelectronic devices, facilitating emerging advanced technologies.

Language: Английский

Citations

0
Triferroic Janus Semiconducting Bilayer with Tunable Intrinsic Multiferroic Coupling for Nonvolatile Memory DOI
Hong Zhang, Chengbin Pan, Tengyue Zhang

et al.

ACS Applied Nano Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 25, 2025

Language: Английский

Citations

0
Tunable sliding ferroelectricity in two-dimensional van der Waals RuX2 (X = Cl, Br, and I) multiferroic layers DOI
Peng Han, Jingtong Zhang, Xumin Chen

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(8)

Published: Feb. 24, 2025

Two-dimensional (2D) van der Waals (vdW) materials offer vast potential for designing ferroelectrics with desired properties through simple layer stacking. Here, based on first principles, we demonstrate that the vdW layered crystals RuX2 (X = Cl, Br, and I) are a class of 2D multiferroic sliding ferroelectrics. The stacking two magnetic monolayers same orientation breaks spatial inversion symmetry, resulting in stable vertical polarization. In addition, direction polarization can be reversed slight interlayer sliding, which it only needs to overcome small energy barrier 7.16 meV. Among these crystals, bilayer RuI2 not possesses remarkable ferroelectricity 0.49 pC/m but also exhibits long-range order due its large anisotropy energy. When stack is increased trilayers, significantly increases 1.03 pC/m, much larger than structure. Furthermore, application compressive strain results substantial increase This work provides an efficient method ferroelectric by engineering.

Language: Английский

Citations

0
Electrically controlled valley polarization and anomalous valley Hall effect in GdCl2 bilayer DOI

Weixin Liu,

Yaping Wang, Li Cai

et al.

Journal of Rare Earths, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 1, 2025

Language: Английский

Citations

0