Advanced Materials,
Journal Year:
2022,
Volume and Issue:
34(18)
Published: March 4, 2022
In
recent
years,
the
performance
of
perovskite
quantum
dots
(QDs)
and
QD-based
light-emitting
diodes
(QLEDs)
has
improved
greatly,
with
electroluminescence
(EL)
efficiency
green
red
emission
exceeding
20%.
However,
development
near-infrared
(NIR)
QLEDs
reached
stagnation,
where
reported
maximum
EL
is
still
below
6%,
limiting
their
further
applications.
this
work,
new
NIR-emissive
FAPbI3
QDs
are
developed
by
post-treating
long
alkyl-encapsulated
2-phenylethylammonium
iodide
(PEAI).
The
incorporation
PEAI
reduces
QD
surface
defects
for
giving
a
high
photoluminescence
yield
up
to
61.6%.
n-octane
solution
PEAI-passivated
spin
coated
on
top
PEDOT:PSS-treated
ITO
electrode
modified
thermally
crosslinked
hole-transporting
layer
give
full-coverage,
smooth,
dense
film.
Incorporating
an
effective
electron-transporting
material,
CN-T2T,
which
deep
lowest
unoccupied
molecular
orbital
good
electron
mobility,
optimal
device
λmax
at
772
nm
achieves
external
15.4%
current
density
0.54
mA
cm-2
(2.6
V),
highest
ever
perovskite-based
NIR
QLEDs.
This
study
provides
facile
strategy
prepare
high-quality
films
suitable
highly
efficient
QLED
Advanced Materials,
Journal Year:
2022,
Volume and Issue:
34(26)
Published: April 15, 2022
Near-infrared
(NIR)
luminescence
materials
with
broadband
emissions
are
necessary
for
the
development
of
light-emitting
diodes
(LEDs)
based
light
sources.
However,
most
known
NIR-emitting
limited
by
their
low
external
quantum
efficiency.
This
work
demonstrates
how
photoluminescence
efficiency
europium-activated
calcium
oxide
(CaO:Eu)
NIR
phosphor
can
be
significantly
improved
and
stabilized
at
operating
temperatures
LEDs.
A
carbon
paper
wrapping
technology
is
innovatively
developed
used
during
solid-state
sintering
to
promote
reduction
Eu3+
into
Eu2+
.
In
parallel,
oxygen
vacancies
in
CaO
lattice
repaired
utilizing
GeO2
decomposition.
Through
this
process,
a
record-high
54.7%
740
nm
obtained
thermal
stability
greatly
from
57%
90%
125
°C.
The
as-fabricated
NIR-LEDs
reach
record
photoelectric
(100
[email protected]%)
output
power
mA
@
319.5
mW).
discovery
high-performance
phosphors
will
open
new
research
avenues
LED
sources
variety
photonics
applications.
Abstract
The
growing
demand
for
spectroscopy
applications
in
the
areas
of
agriculture,
retail
and
healthcare
has
led
to
extensive
research
on
infrared
light
sources.
ability
phosphors
absorb
blue
from
commercial
LED
convert
excitation
energy
into
long-wavelength
luminescence
is
crucial
design
cost-effective
high-performance
phosphor-converted
LEDs.
However,
lack
ideal
blue-pumped
short-wave
(SWIR)
with
an
emission
peak
longer
than
900
nm
greatly
limits
development
SWIR
LEDs
using
converter
technology.
Here
we
have
developed
a
series
SWIR-emitting
materials
high
efficiency
excellent
thermal
stability
by
co-doping
Cr
3+
-Yb
ion
pairs
Lu
0.2
Sc
0.8
BO
3
host
materials.
Benefitting
strong
absorption
waveband
very
efficient
→Yb
transfer,
as-synthesized
:Cr
,Yb
phosphor
emits
intense
900–1200
Yb
under
at
~460
nm.
optimized
presents
internal
quantum
yield
73.6%
intensity
100
°C
can
still
keep
88.4%
starting
value
25
°C.
prototype
device
based
exhibits
exceptional
performance,
delivering
radiant
power
18.4
mW
9.3%
blue-to-SWIR
conversion
5.0%
electricity-to-SWIR
120
mA
driving
current.
Moreover,
illumination
high-power
LED,
covert
information
identification
night
vision
lighting
been
realized,
demonstrating
bright
prospect
practical
applications.
Advanced Materials,
Journal Year:
2023,
Volume and Issue:
35(22)
Published: March 3, 2023
Ultra-efficient
broadband
near-infrared
(NIR)
phosphor-converted
light-emitting
diodes
(pc-LEDs)
are
urgently
needed
to
improve
the
detection
sensitivity
and
spatial
resolution
of
current
smart
NIR
spectroscopy-based
techniques.
Nonetheless,
performance
pc-LED
has
severely
limited
owing
external
quantum
efficiency
(EQE)
bottleneck
materials.
Herein,
a
blue
LED
excitable
Cr3+
-doped
tetramagnesium
ditantalate
(Mg4
Ta2
O9
,
MT)
phosphor
is
advantageously
modified
through
lithium
ion
as
key
efficient
emitter
achieve
high
optical
output
power
light
source.
The
emission
spectrum
encompasses
700-1300
nm
electromagnetic
first
biological
window
(λmax
=
842
nm)
with
full-width
at
half-maximum
(FWHM)
≈2280
cm-1
(≈167
nm),
achieves
record
EQE
61.25%
detected
450
excitation
Li-ion
compensation.
A
prototype
fabricated
MT:Cr3+
Li+
evaluate
its
potential
practical
application,
which
reveals
an
53.22
mW
driving
100
mA,
photoelectric
conversion
25.09%
10
mA.
This
work
provides
ultra-efficient
luminescent
material,
shows
great
promise
in
applications
presents
novel
option
for
next-generation
high-power
compact
sources.
Communications Chemistry,
Journal Year:
2022,
Volume and Issue:
5(1)
Published: Nov. 10, 2022
The
subclass
of
multi
resonant
thermally
activated
delayed
fluorescent
emitters
(MR-TADF)
containing
boron
atoms
has
garnered
significant
attention
in
the
field
organic
light
emitting
diode
(OLED)
research.
Among
boron-based
MR-TADF
emitters,
double
boron-embedded
(DB-MR-TADF)
show
excellent
electroluminescence
performances
with
high
photoluminescence
quantum
yields,
narrow
band
emission,
and
beneficially
small
singlet-triplet
energy
levels
all
full-color
gamut
regions.
This
article
reviews
recent
progress
DB-MR-TADF
particular
to
molecular
design
concepts,
synthetic
routes,
optoelectronic
properties,
OLED
performance,
giving
future
prospects
for
real-world
applications.
Advanced Materials,
Journal Year:
2023,
Volume and Issue:
35(35)
Published: May 11, 2023
Lead
halide
perovskites
have
shown
exceptional
performance
in
light-emitting
devices
(PeLEDs),
particularly
producing
significant
electroluminescence
sky-blue
to
near-infrared
wavelengths.
However,
PeLEDs
emitting
pure-blue
light
at
465-475
nm
are
still
not
satisfactory.
Herein,
efficient
and
stable
reported
by
controlling
phase
distribution,
passivation
of
defects,
as
well
surface
modifications
using
multifunctional
phenylethylammonium
trifluoroacetate
(PEATFA)
reduced-dimensional
p-F-PEA2
Csn-1
Pbn
(Br0.55
Cl0.45
)3n+1
polycrystalline
perovskite
films.
Compared
with
4-fluorophenylethylammonium
(p-F-PEA+
)
the
pristine
films,
(PEA+
has
lower
adsorption
energy
while
interacting
perovskites,
resulting
large-n
low-dimensional
which
can
greatly
facilitate
charge
transport
within
The
interaction
between
CO
group
(TFA-
significantly
reduces
defects
Additionally,
electron-giving
CF3
TFA-
uplifts
potential
smooth
electronic
injection
devices.
additive
strategy
leads
elevated
radiative
recombination
carrier
films
As
a
result,
exhibit
maximum
external
quantum
efficiency
(EQE)
11.87%
468
spectral
output,
highest
date
for
PeLEDs.
Thus,
this
study
extends
way
high-efficiency
LED
polycrystal
ACS Applied Materials & Interfaces,
Journal Year:
2023,
Volume and Issue:
15(27), P. 32580 - 32588
Published: June 29, 2023
Blue
InGaN
chip-pumped
short-wave
infrared
(SWIR)
emitters
have
aroused
tremendous
attention
and
shown
emerging
applications
in
diverse
fields
such
as
healthcare,
retail,
agriculture.
However,
discovering
blue
light-emitting
diode
(LED)-pumped
SWIR
phosphors
with
a
central
emission
wavelength
over
1000
nm
remains
significant
challenge.
Herein,
we
demonstrate
the
efficient
broadband
luminescence
of
Ni2+
by
simultaneously
incorporating
Cr3+
ions
into
MgGa2O4
lattice,
sensitizer
emitter.
Because
strong
light
absorption
high
energy
transfer
efficiency
to
Ni2+,
obtained
MgGa2O4:Cr3+,
show
intense
peak
at
1260
full
width
half
maximum
(FWHM)
222
under
excitation
light.
The
optimized
phosphor
presents
an
ultra-high
photoluminescence
quantum
96.5%
outstanding
thermal
stability
(67.9%@150
°C).
A
source
has
been
fabricated
through
combination
prepared
commercial
450
LED
chip,
delivering
radiant
power
14.9
mW
150
mA
input
current.
This
work
not
only
demonstrates
feasibility
developing
high-power
using
converter
technology
but
also
new
insights
importance
technology.
Abstract
An
important
challenge
in
the
research
and
development
of
compact
near‐infrared
(NIR)
light
sources
is
discovery
new
efficient
ultra‐broadband
NIR
luminescent
materials
to
replace
conventional
Cr
3+
‐doped
compounds.
Herein,
this
work
reports
a
divalent
europium‐doped
Ba
3
GeO
4
Br
2
phosphor
that
exhibits
high
photoluminescence
quantum
yield
48.8%
an
ultra‐broad
emission
band
ranging
continuously
from
500
1100
nm
(full
width
at
half
maximum
=
202
nm)
under
near‐ultraviolet
or
blue
excitation.
A
strategy
embedding
alumina
crucible
purity
graphite
devised
deployed
during
solid‐state
sintering
facilitate
conversion
Eu
into
2+
.
Theoretical
calculations,
structural
refinement,
spectral
analysis
demonstrate
visible
:Eu
originates
ions
occupying
distorted
Ba3O
polyhedra
lattice.
The
as‐prepared
phosphor‐converted
light‐emitting
diode
device
achieves
optical
output
power
30.1
mW@100
mA
(520–1100
photoelectric
efficiency
22%@100
(350–1100
nm).
Experiments
on
tissue
penetration
imaging
illustrate
its
application
detection
food
quality
testing
appears
promising.