Measuring the Exciton Binding Energy: Learning from a Decade of Measurements on Halide Perovskites and Transition Metal Dichalcogenides DOI Creative Commons
Kameron R. Hansen, John Colton, Luisa Whittaker‐Brooks

et al.

Advanced Optical Materials, Journal Year: 2023, Volume and Issue: 12(3)

Published: Oct. 22, 2023

Abstract The exciton binding energy ( E b ) is a key parameter that governs the physics of many optoelectronic devices. At their best, trustworthy and precise measurements challenge theoreticians to refine models, are driving force in advancing understanding material system, lead efficient device design. worst, inaccurate astray, sow confusion within research community, hinder improvements by leading poor designs. This review article seeks highlight pros cons different measurement techniques used determine , namely, temperature‐dependent photoluminescence, resolving Rydberg states, electroabsorption, magnetoabsorption, scanning tunneling spectroscopy, fitting optical absorption. Due numerous conflicting values reported for halide perovskites (HP) transition metal dichalcogenides (TMDC) monolayers, an emphasis placed on highlighting these attempt reconcile variance between techniques. It argued experiments with clearest indicators agreement following values: ≈350–450 meV TMDC monolayers SiO 2 vacuum, ≈150–200 hBN‐encapsulated ≈200–300 common lead‐iodide 2D HPs, ≈10 methylammonium iodide.

Language: Английский

Applications of bound states in the continuum in photonics DOI

Meng Kang,

Tao Liu, C. T. Chan

et al.

Nature Reviews Physics, Journal Year: 2023, Volume and Issue: 5(11), P. 659 - 678

Published: Oct. 6, 2023

Language: Английский

Citations

144
Electrical control of hybrid exciton transport in a van der Waals heterostructure DOI Creative Commons
Fedele Tagarelli, Edoardo Lopriore, Daniel Erkensten

et al.

Nature Photonics, Journal Year: 2023, Volume and Issue: 17(7), P. 615 - 621

Published: April 20, 2023

Interactions between out-of-plane dipoles in bosonic gases enable the long-range propagation of excitons. The lack direct control over collective dipolar properties has so far limited degrees tunability and microscopic understanding exciton transport. In this work we modulate layer hybridization interplay many-body interactions excitons a van der Waals heterostructure with an applied vertical electric field. By performing spatiotemporally resolved measurements supported by theory, uncover dipole-dependent transport different hybridization. Moreover, find constant emission quantum yields transporting species as function excitation power radiative decay mechanisms dominating nonradiative ones, fundamental requirement for efficient excitonic devices. Our findings provide complete picture effects dilute gases, have crucial implications studying emerging states matter such Bose-Einstein condensation optoelectronic applications based on propagation.

Language: Английский

Citations

53
Reconfiguring nucleation for CVD growth of twisted bilayer MoS2 with a wide range of twist angles DOI Creative Commons
Manzhang Xu,

Hongjia Ji,

Lu Zheng

et al.

Nature Communications, Journal Year: 2024, Volume and Issue: 15(1)

Published: Jan. 17, 2024

Abstract Twisted bilayer (TB) transition metal dichalcogenides (TMDCs) beyond TB-graphene are considered an ideal platform for investigating condensed matter physics, due to the moiré superlattices-related peculiar band structures and distinct electronic properties. The growth of large-area high-quality TB-TMDCs with wide twist angles would be significant exploring angle-dependent physics applications, but remains challenging implement. Here, we propose a reconfiguring nucleation chemical vapor deposition (CVD) strategy directly synthesizing TB-MoS 2 from 0° 120°. angles-dependent Moiré periodicity can clearly observed, interlayer coupling shows strong relationship angles. Moreover, yield in MoS density significantly improved 17.2% 28.9 pieces/mm by tailoring gas flow rate molar ratio NaCl MoO 3 . proposed approach opens avenue precise both fundamental research practical applications.

Language: Английский

Citations

40
Valley quantum interference modulated by hyperbolic shear polaritons DOI
Guangyi Jia,

Jinxuan Luo,

Congyu Cui

et al.

Physical review. B./Physical review. B, Journal Year: 2024, Volume and Issue: 109(15)

Published: April 15, 2024

Recently, symmetry-broken polaritons within low-symmetry crystals have triggered extensive research interest since they present enhanced directionality of polariton propagation for nanoscale manipulation and steering photons. The latest discovery hyperbolic shear (HShPs) in Bravais provides great promise innovating valleytronics. Herein, we theoretically demonstrate the coherent valley degree freedom a two-dimensional valleytronic material interfaced with monoclinic $\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$ $\mathrm{CdW}{\mathrm{O}}_{4}$ crystals. Robust wideband tunable interference values are achieved mid- to far-infrared wavelengths. By virtue stronger effect $\mathrm{G}{\mathrm{a}}_{2}{\mathrm{O}}_{3}$, quantum fringes modulated by crystal more than those tuned via crystal. After is doped free charge carriers, number HShP modes gradually decreases accompanied blueshifts broadening some dispersion bands as doping concentration increases. In consequence, main broadened shift toward short Additionally, increases optical losses which limit effective Therefore, reduced smaller negative value range Finally, azimuthal direction gives rise patterns when tuning azimuth twist angles hybrid structures. susceptive variation lattice displacement induced concentration. Thus, has potential estimating directions HShPs

Language: Английский

Citations

29
3D integration of 2D electronics DOI
Darsith Jayachandran,

Najam U Sakib,

Saptarshi Das

et al.

Nature Reviews Electrical Engineering, Journal Year: 2024, Volume and Issue: 1(5), P. 300 - 316

Published: April 25, 2024

Language: Английский

Citations

27
Understanding epitaxial growth of two-dimensional materials and their homostructures DOI
Can Liu,

Tianyao Liu,

Zhibin Zhang

et al.

Nature Nanotechnology, Journal Year: 2024, Volume and Issue: 19(7), P. 907 - 918

Published: July 1, 2024

Language: Английский

Citations

21
Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures DOI

Ruixia Wu,

Hongmei Zhang,

Huifang Ma

et al.

Chemical Reviews, Journal Year: 2024, Volume and Issue: 124(17), P. 10112 - 10191

Published: Aug. 27, 2024

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability structure properties, potential practical applications. These not only overcome the inherent limitations individual materials but also enable realization new properties through appropriate combinations, establishing platform explore physical chemical at micro-nano-pico scales. In this review, we systematically summarize latest research progress in synthesis, modulation, application 2D TMD heterostructures. We first introduce techniques for fabricating heterostructures, examining rationale, mechanisms, advantages, disadvantages each strategy. Furthermore, emphasize importance characteristic modulation discuss some approaches achieve novel functionalities. Then, representative applications Finally, highlight challenges future perspectives synthesis device fabrication provide feasible solutions.

Language: Английский

Citations

20
Two-Dimensional Materials for Brain-Inspired Computing Hardware DOI
Shreyash Hadke, Min‐A Kang,

Vinod K. Sangwan

et al.

Chemical Reviews, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 2, 2025

Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security healthcare. However, the current strategy implementing artificial intelligence algorithms using conventional silicon hardware is leading unsustainable energy consumption. Neuromorphic based on electronic devices mimicking biological systems emerging as low-energy alternative, although further progress requires materials that can mimic function while maintaining scalability and speed. As result their diverse unique properties, atomically thin two-dimensional (2D) are promising building blocks for next-generation electronics including nonvolatile memory, in-memory neuromorphic computing, flexible edge-computing systems. Furthermore, 2D achieve biorealistic synaptic neuronal responses extend beyond logic memory Here, we provide comprehensive review growth, fabrication, integration van der Waals heterojunctions optoelectronic devices, circuits, For each case, relationship between physical properties device emphasized followed by critical comparison technologies different applications. We conclude with forward-looking perspective key remaining challenges opportunities applications leverage fundamental heterojunctions.

Language: Английский

Citations

5
Twist-assisted intrinsic toughening in two-dimensional transition metal dichalcogenides DOI
Xiaodong Zheng, Shizhe Feng, Chi Shing Tsang

et al.

Nature Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 1, 2025

Language: Английский

Citations

3
Exciton optics, dynamics, and transport in atomically thin semiconductors DOI Creative Commons
Raül Perea‐Causín, Daniel Erkensten, Jamie M. Fitzgerald

et al.

APL Materials, Journal Year: 2022, Volume and Issue: 10(10)

Published: Oct. 1, 2022

Atomically thin semiconductors such as transition metal dichalcogenide (TMD) monolayers exhibit a very strong Coulomb interaction, giving rise to rich exciton landscape. This makes these materials highly attractive for efficient and tunable optoelectronic devices. In this article, we review the recent progress in understanding of optics, dynamics transport, which crucially govern operation TMD-based We highlight impact hBN-encapsulation, reveals plethora many-particle states optical spectra, outline most novel breakthroughs field exciton-polaritonics. Moreover, underline direct observation formation thermalization TMD heterostructures time-resolved ARPES studies. also show density, strain dielectric environment on diffusion funneling. Finally, put forward relevant research directions atomically near future.

Language: Английский

Citations

44