Nanomaterials, Journal Year: 2025, Volume and Issue: 15(9), P. 654 - 654

Published: April 25, 2025

Boron phosphide (BP), an emerging III-V semiconductor, has garnered significant interest because of its exceptional structural stability, wide bandgap, high thermal conductivity, and tunable electronic properties. This review provides a comprehensive analysis BP, commencing with distinctive characteristics proceeding detailed examination physicochemical Recent progress in BP synthesis is critically examined, focus on key fabrication strategies such as chemical vapor deposition, high-pressure co-crystal melting, molten salt methods. These approaches have enabled the controlled growth high-quality nanostructures, including bulk crystals, nanoparticles, nanowires, thin films. Furthermore, highlights broad application spectrum spanning photodetectors, sensors, management, energy conversion, storage. Despite these advances, precise control over growth, morphology, phase purity BP's low-dimensional structures remains critical challenge. Addressing limitations requires innovative defect engineering, heterostructure design, scalable manufacturing techniques. concludes by outlining future research directions that are essential for unlocking potential next-generation electronics, sustainable technologies, multifunctional materials.

Language: Английский