Interplay of ferroelectric polarization and defect engineering in semiconductor heterostructures for photovoltaic synaptic functionality

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(17)

Published: April 28, 2025

Emerging optoelectronic synaptic devices based on two-dimensional (2D) materials are extremely attractive in the field of artificial intelligence. However, most reports, these either have single functions and high energy consumption. Based photoinduced ferroelectric polarization reversal (CuInP2S6) synergistic defect engineering (MoS2), we propose a 2D CuInP2S6–MoS2 two-terminal synapse device, which has simple structure wide spectral photovoltaic response ultralow power consumption, as low 0.03 fJ under electric pulse stimulation 0.5 light stimulation. Most importantly, complex bionic behaviors, including acquisition, extinction, recovery, generalization, were mimicked by electrical stimulation, respectively. Therefore, this efficient device can provide scientific perspective for future synapses

Language: Английский

Photonic–Electronic Modulated a-IGZO Synaptic Transistor with High Linearity Conductance Modulation and Energy-Efficient Multimodal Learning

Micromachines, Journal Year: 2025, Volume and Issue: 16(5), P. 517 - 517

Published: April 28, 2025

Brain-inspired neuromorphic computing is expected to overcome the von Neumann bottleneck by eliminating memory wall between processing and units. Nevertheless, critical challenges persist in synaptic device implementation, particularly regarding nonlinear/asymmetric conductance modulation multilevel states, which substantially impede realization of high-performance hardware. This study demonstrates a novel advancement photonic–electronic modulated devices through development an amorphous indium–gallium–zinc oxide (a-IGZO) transistor. The biological functionalities, including excitatory/inhibitory post-synaptic currents (EPSCs/IPSCs) spike-timing-dependent plasticity, while achieving excellent characteristics (nonlinearity 0.0095/−0.0115 asymmetric ratio 0.247) successfully implementing Pavlovian associative learning paradigms. Notably, systematic neural network simulations employing experimental parameters reveal 93.8% recognition accuracy on MNIST handwritten digit dataset. a-IGZO transistor with co-modulation serves as potential building block for constructing architectures human-brain efficiency.

Language: Английский

Van der Waals Inverted-Floating-Gate Transistors for Artificial Intelligence Electronics

ACS Nano, Journal Year: 2025, Volume and Issue: unknown

Published: May 12, 2025

An inverted floating gate device architecture is introduced, demonstrated with all-van-der-Waals technology, targeting both logic and neuromorphic circuits. Integrating a top polymorphic multilayer graphene improves the electrostatic coupling to ReS2 semiconductor channel by facilitating efficient dynamic conductance tuning enabling dual-mode reconfigurable memory operations. The non-volatile capability used implement compact gates for in-memory computing. also shown emulate synaptic plasticity, an accuracy of 92% in simple artificial neural network simulations. Moreover, spiking neuron circuits networks through five-transistor design makes it versatile building block intelligence electronics. These findings demonstrate potential hybrid integration van der Waals materials address limitations traditional technologies become key developments next-generation

Language: Английский