Broadband convolutional processing using band-alignment-tunable heterostructures

Nature Electronics, Journal Year: 2022, Volume and Issue: 5(4), P. 248 - 254

Published: April 25, 2022

Language: Английский

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How to characterize figures of merit of two-dimensional photodetectors

Nature Communications, Journal Year: 2023, Volume and Issue: 14(1)

Published: April 19, 2023

Abstract Photodetectors based on two-dimensional (2D) materials have been the focus of intensive research and development over past decade. However, a gap has long persisted between fundamental mature applications. One main reasons behind this lack practical unified approach for characterization their figures merit, which should be compatible with traditional performance evaluation system photodetectors. This is essential to determine degree compatibility laboratory prototypes industrial technologies. Here we propose general guidelines merit 2D photodetectors analyze common situations when specific detectivity, responsivity, dark current, speed can misestimated. Our help improve standardization

Language: Английский

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Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering

Nature Communications, Journal Year: 2023, Volume and Issue: 14(1)

Published: Jan. 26, 2023

Ga2O3-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, therefore they are promising to be an alternative the bulky fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. Here, by deliberate lattice band engineering, we construct n-Barrier-n unipolar barrier consisting β-Ga2O3/MgO/Nb:SrTiO3 heterostructure, which enlarged conduction offsets fortify reverse breakdown suppress dark current while negligible valance faciliate minority carrier flow across heterojunction. The developed devices record-high gain up 5.9 × 105 detectivity 2.33 1016 Jones among reported wafer-scale grown photodetectors, even comparable commercial tubes. These findings provide insights into precise manipulation alignment also offer exciting opportunities further developing high-performance electronics optoelectronics.

Language: Английский

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Van der Waals two-color infrared photodetector

Light Science & Applications, Journal Year: 2022, Volume and Issue: 11(1)

Published: Jan. 2, 2022

With the increasing demand for multispectral information acquisition, infrared imaging technology that is inexpensive and can be miniaturized integrated into other devices has received extensive attention. However, widespread usage of such photodetectors still limited by high cost epitaxial semiconductors complex cryogenic cooling systems. Here, we demonstrate a noncooled two-color photodetector provide temporal-spatial coexisting spectral blackbody detection at both near-infrared mid-infrared wavelengths. This consists vertically stacked back-to-back diode structures. The signals effectively separated to achieve ultralow crosstalk ~0.05% controlling built-in electric field depending on intermediate layer, which acts as an electron-collecting layer hole-blocking barrier. impressive performance verified specific detectivity (D*) 6.4 × 109 cm Hz1/2 W-1 3.5 μm room temperature, well promising NIR/MWIR absolute temperature detection.

Language: Английский

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Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe₂ Dirac Semimetal

Nano Letters, Journal Year: 2023, Volume and Issue: 23(17), P. 8241 - 8248

Published: Aug. 18, 2023

Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant these requirements. However, challenges remain in scalable growth substrate-dependence for on-chip Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal using a low-temperature self-stitched epitaxy (SSE) approach. low formation energy between two precursors facilitates multiple-point nucleation (∼300 °C), growing up, merging, resulting self-stitching of PdTe2 domains into continuous film, which is highly compatible back-end-of-line (BEOL) technology. uncooled PdTe2/Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse up to 10.6 μm large specific detectivity. Furthermore, integrated device array demonstrates high-resolution room-temperature capability, can serve as optical data receiver IR communication. This study paves way toward MIR sensing.

Language: Английский

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Flexible Vertical Photogating Transistor Network with an Ultrashort Channel for In‐Sensor Visual Nociceptor

Advanced Functional Materials, Journal Year: 2021, Volume and Issue: 31(36)

Published: June 24, 2021

Abstract Humans can clearly perceive surroundings efficiently while consuming little energy because of human intelligence and powerful vision system. Thus, it has been a long‐sought dream for beings to build such an energy‐efficient artificial intelligent system with emerging devices. Unfortunately, wearable optoelectronic device visual nociceptor systems, regarded as key bionic function protect the vision, remains be developed so far. Herein, using vertical coplanar‐multiterminal flexible transient photogating transistor network 3 nm ultrashort channel, painful‐perceptual abilities is successfully demonstrated electronic‐skin (e‐skin) applications. The not only ability ultrafast physical disappearance 60 s information security but also establishes optical in‐sensor (ISVN) e‐skin. transition from short‐time memory long‐time educed by strong effect, higher‐level‐graded painful alarm‐sensing this Moreover, proposed devices will achieve light sensitization under different spatiotemporal color patterns avoid external secondary injuries. It provides good opportunity future e‐skin taking advantage its intriguing pain‐perceptual abilities.

Language: Английский

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Reconfigurable optoelectronic memristor for in-sensor computing applications

Nano Energy, Journal Year: 2021, Volume and Issue: 89, P. 106291 - 106291

Published: June 29, 2021

Language: Английский

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2D semiconductors for specific electronic applications: from device to system

npj 2D Materials and Applications, Journal Year: 2022, Volume and Issue: 6(1)

Published: Aug. 1, 2022

Abstract The shrinking of transistors has hit a wall material degradation and the specialized electronic applications for complex scenarios have raised challenges in heterostructures integration. Intriguingly, two-dimensional (2D) materials excellent performance even at monolayer. rich band structures lattice-mismatch-free can further develop specific mechanisms to meet demands various systems. Here we review progress 2D semiconductors from devices Focusing on ultra-thin high-performance nanosheets transistor channels, consider channel optimization, contact characteristics, dielectric Then examined functions including computing, memory sense. Finally, discuss functionalized arrays aiming problems that are difficult solve with bulk materials, like fusion computation all-in-one system.

Language: Английский

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Photonic van der Waals integration from 2D materials to 3D nanomembranes

Nature Reviews Materials, Journal Year: 2023, Volume and Issue: 8(8), P. 498 - 517

Published: April 21, 2023

Language: Английский

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Fully Depleted Self‐Aligned Heterosandwiched Van Der Waals Photodetectors

Advanced Materials, Journal Year: 2022, Volume and Issue: 34(39)

Published: Aug. 16, 2022

Room-temperature-operating highly sensitive mid-wavelength infrared (MWIR) photodetectors are utilized in a large number of important applications, including night vision, communications, and optical radar. Many previous studies have demonstrated uncooled MWIR using 2D narrow-bandgap semiconductors. To date, most these works atomically thin flakes, simple van der Waals (vdW) heterostructures, or p-n junctions as absorbers, which difficulty meeting the requirements for state-of-the-art with blackbody response. Here, fully depleted self-aligned MoS2 -BP-MoS2 vdW heterostructure sandwiched between two electrodes is reported. This new type photodetector exhibits competitive performance, high peak photoresponsivity up to 0.77 A W-1 low noise-equivalent power 2.0 × 10-14 W Hz-1/2 , region. specific detectivity 8.61 1010 cm Hz1/2 under radiation achieved at room temperature Importantly, effective detection range device twice that photodetectors. Furthermore, presents an ultrafast response ≈4 µs both visible short-wavelength bands. These results provide ideal platform realizing broadband room-temperature

Language: Английский

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