Lévy flight for electrons in graphene in the presence of regions with enhanced spin-orbit coupling DOI
Diego B. Fonseca, A. L. R. Barbosa, Luiz Felipe C. Pereira

et al.

Physical review. B./Physical review. B, Journal Year: 2024, Volume and Issue: 110(7)

Published: Aug. 16, 2024

In this work, we propose an electronic L\'evy glass built from graphene nanoribbons in the presence of regions with enhanced spin-orbit coupling. Although electrons present a low coupling strength, it can be increased by proximity effect appropriate substrate. We consider different edge types, which contain circular tunable Rashba coupling, whose diameter follows power-law distribution. find that spin-orbital clusters induce transition superdiffusive to diffusive charge transport, similar what recently reported for electrostatic [Phys. Rev. B 107, 155432 (2023)]. also investigate spin polarization glasses, and show finite found only regime. contrast, vanishes regime, making useful device transmission controlled its Fermi energy. Finally, apply multifractal analysis polarization, time series regime are multifractal, while they tend monofractal both regimes, characterizing marked difference between mesoscopic fluctuations transport proposed glass.

Language: Английский

Tunable valley-spin splitting in a Janus XMSiN2 monolayer (X=S, Se; M DOI
Jun Zhao, Yunxi Qi,

Can Yao

et al.

Physical review. B./Physical review. B, Journal Year: 2024, Volume and Issue: 109(3)

Published: Jan. 9, 2024

Exploring spin-valley coupling in two-dimensional (2D) materials with strong spin-orbit (SOC) is of great significance for fundamental physics and practical applications. Using first-principles calculations, we investigate the valley-related properties Janus $XM{\mathrm{SiN}}_{2}$ $(X=\mathrm{S}, \mathrm{Se}; M=\mathrm{Mo}, \mathrm{Cr})$ monolayer. The monolayer forms a pair nonequivalent valleys, conduction valence bands are degenerated at valleys. inversion symmetry breaking SOC effect induce remarkable valley spin splitting Rashba splitting. Our calculations indicate that not only valley-contrasting transport but also optical selection rules result coexistence Hall effects Moreover, demonstrate valley-spin can be modulated by in-plane biaxial strains, allowing its extraordinary potential spintronics valleytronic We show V-doped ${\mathrm{SMoSiN}}_{2}$ exhibit giant polarization 89.51 meV $(\ensuremath{-}24.48 \mathrm{meV})$ (conduction) band. These findings could helpful applications

Language: Английский

Citations

22

Spintronics meets orbitronics: Emergence of orbital angular momentum in solids DOI Creative Commons
Daegeun Jo, Dongwook Go, Gyung‐Min Choi

et al.

npj Spintronics, Journal Year: 2024, Volume and Issue: 2(1)

Published: June 28, 2024

Abstract One of the ultimate goals spintronics is to realize an efficient electrical manipulation spin for high-speed and low-power nanodevices. A core ingredient achieving this goal relativistic interaction between electron’s orbital motion spin, but properties angular momentum itself have remained largely unexplored. However, recent theories experiments uncovered that electrons may acquire nonvanishing when external electric field applied, even without spin–orbit coupling. These findings spurred emergence a burgeoning known as orbitronics, which harnesses manipulate magnetic devices. In Review, we provide overview developments in orbitronics discuss their implications spintronics. We then outline future avenues research at intersection orbitronics.

Language: Английский

Citations

18

Electron interactions in Rashba materials DOI
Yasha Gindikin, Alex Kamenev

Physical review. B./Physical review. B, Journal Year: 2025, Volume and Issue: 111(3)

Published: Jan. 2, 2025

Language: Английский

Citations

2

Electric field induced second-order anomalous Hall transport in unconventional Rashba systems DOI Creative Commons
A. Bhattacharya, Annica M. Black‐Schaffer

Physical review. B./Physical review. B, Journal Year: 2025, Volume and Issue: 111(4)

Published: Jan. 23, 2025

Nonlinear responses in transport experiments may unveil information and generate new phenomena materials that are not accessible at linear order due to symmetry constraints. While the anomalous Hall response strictly requires absence of time-reversal symmetry, second-order, thus nonlinear, needs broken inversion symmetry. Recently, much effort has been made obtain a second-order voltage longitudinal ac driving current, both about band geometric quantities for its useful technological applications, including rectification frequency doubling. Typically, additional material engineering is required noncentrosymmetric systems since it obeys stringent crystallographic constraint. To circumvent this, an alternative route apply dc electric field. In this Letter, we uncover field induced effect inversion-broken possessing experimentally unconventional Rashba bands. We establish quantum metric, geometrical feature electronic wave functions providing on nontrivial structure Bloch bands, responsible nonlinear response. Published by American Physical Society 2025

Language: Английский

Citations

2

Sign reversal diode effect in superconducting Dayem nanobridges DOI Creative Commons
Daniel Margineda, Alessandro Crippa, Elia Strambini

et al.

Communications Physics, Journal Year: 2023, Volume and Issue: 6(1)

Published: Nov. 27, 2023

Language: Английский

Citations

23

Emergence of radial Rashba spin-orbit fields in twisted van der Waals heterostructures DOI
Tobias Frank, Paulo E. Faria, Klaus Zollner

et al.

Physical review. B./Physical review. B, Journal Year: 2024, Volume and Issue: 109(24)

Published: June 12, 2024

The Rashba effect is quintessential in condensed matter physics, appearing virtually any electronic heterostructure. Its well-known manifestation a tangential spin texture. Here, the authors theoretically demonstrate emergence and engineering of radial textures twisted van der Waals heterostructures using rigorous first-principles simulations phenomenological modeling. These predictions offer new opportunities for controlling manipulation, as well tuning correlated states superconductivity realm.

Language: Английский

Citations

12

Twist-angle-tunable spin texture in WSe2/graphene van der Waals heterostructures DOI
Haozhe Yang, Beatriz Martín‐García, Jozef Kimák

et al.

Nature Materials, Journal Year: 2024, Volume and Issue: 23(11), P. 1502 - 1508

Published: Aug. 27, 2024

Language: Английский

Citations

12

Spin-orbit interaction driven terahertz nonlinear dynamics in transition metals DOI Creative Commons
Ruslan Salikhov,

Markus Lysne,

Philipp Werner

et al.

npj Spintronics, Journal Year: 2025, Volume and Issue: 3(1)

Published: Jan. 27, 2025

The interplay of electronic charge, spin, and orbital currents, coherently driven by picosecond long oscillations light fields in spin-orbit coupled systems, is the foundation emerging terahertz lightwave spintronics orbitronics. essential rules for how interact with these systems a nonlinear way are still not understood. In this work, we demonstrate universally applicable nonlinearity originating from interactions conducting materials, wherein light-induced spin textures manifests. We utilized harmonic generation spectroscopy to investigate dynamics over timescales various transition metal films. found that efficiency scales Hall conductivity studied films, while phase takes two possible values (shifted π), depending on d-shell filling. These findings elucidate fundamental mechanisms governing non-equilibrium polarization at frequencies, which relevant potential applications spin- orbital-based devices.

Language: Английский

Citations

1

Ferroelectric Spin-Orbit Valve Effect DOI
Lingling Tao, Mingbo Dou, Xianjie Wang

et al.

Physical Review Letters, Journal Year: 2025, Volume and Issue: 134(7)

Published: Feb. 19, 2025

In ferroelectric (FE) semiconductors with strong spin-orbit coupling, the electron's spin direction is locked to its momentum by an intrinsic field (SOF) switchable polarization. This provides a promising platform for novel nonvolatile spintronic devices. Here, we propose exploiting SOF realize FE valve (FE-SOV), where two are separated thin barrier layer. Because of locking between and polarization direction, conductance FE-SOV strongly depends on relative orientation semiconductors. Using tight-binding model density functional theory calculations FE-SOVs based two-dimensional SnTe Bi, demonstrate giant effect that characterized change several orders in magnitude. Our work enriches physics ferroelectrics proposes new type all-electric control spin-orbitronic device, which holds promise future electronic memory applications.

Language: Английский

Citations

1

Spin texture tunability in Mn1xGexBi2Te4 through varying Ge concentration DOI
A. M. Shikin, D. A. Estyunin, Н. Л. Зайцев

et al.

Physical review. B./Physical review. B, Journal Year: 2025, Volume and Issue: 111(11)

Published: March 26, 2025

Citations

1