Advanced Functional Materials,
Journal Year:
2021,
Volume and Issue:
31(36)
Published: June 24, 2021
Abstract
The
discovery
of
highly
efficient
broadband
near
infrared
(NIR)
emission
material
is
urgent
and
crucial
for
constructing
NIR
lighting
sources
emerging
applications.
Herein,
a
series
hexafluorides
A
2
BMF
6
:Cr
3+
(A
=
Na,
K,
Rb,
Cs;
B
Li,
M
Al,
Ga,
Sc,
In)
peaking
at
≈733–801
nm
with
full
width
half
maximum
(FWHM)
≈98–115
are
synthesized
by
general
ammonium
salt
assisted
synthesis
strategy.
Benefiting
from
the
pre‐ammoniation
trivalent
metal
sources,
Cr
can
be
more
efficiently
doped
into
simultaneously
prevent
generation
competitive
phase.
Particularly,
Na
3
ScF
(λ
em
774
nm,
FWHM
≈
108
nm)
optimal
‐doping
concentration
35.96%
shows
high
internal
quantum
efficiency
91.5%
an
external
≈40.82%.
emitting
diode
(LED)
device
output
power
≈291.05
mW
100
mA
driven
current
photoelectric
conversion
20.94%
fabricated.
strategy
opens
up
new
avenues
exploration
‐doped
phosphors,
as‐obtained
record
demonstrates
LED
Advanced Optical Materials,
Journal Year:
2020,
Volume and Issue:
8(6)
Published: Jan. 17, 2020
Abstract
Super
broadband
near‐infrared
(NIR)
phosphor
converted
light‐emitting
diodes
(pc‐LEDs)
are
future
light
sources
in
NIR
spectroscopy
applications
such
as
food
testing.
At
present,
a
few
blue
LED
excitable
super
phosphors
(bandwidth
>
300
nm)
have
been
developed
producing
the
output
powers
below
26
mW
at
100
mA
input
current
after
packaging.
Here,
an
efficient
achieved
by
doping
Yb
3+
is
reported
Ca
2
LuZr
Al
3
O
12
:Cr
(CLZA:Cr
)
garnet
previously.
Benefited
from
superposition
of
Cr
emission
and
highly
excited
energy
transfer
,
codoped
CLZA:Cr
,Yb
shows
bandwidth
320
nm
internal
quantum
efficiency
77.2%
both
higher
than
that
(150
69.1%)
singly
doped
phosphor.
The
converts
produced
41.8
current.
pc‐LED
source
also
well
applied
to
transmission
spectra
measurement
water.
results
indicate
great
potential
applications.
Advanced Optical Materials,
Journal Year:
2020,
Volume and Issue:
8(8)
Published: Feb. 23, 2020
Abstract
High‐radiance
near‐infrared
(NIR)
phosphor‐converted
light‐emitting
diodes
(pc‐LEDs)
are
demanded
for
wearable
biosensing
devices
and
the
properties
of
these
pc‐LEDs
highly
dependent
on
performance
NIR
phosphor.
An
ultraviolet–visible
NIR‐responded
broadband
NaScGe
2
O
6
:Cr
3+
phosphor
is
reported.
Under
490
nm
excitation,
shows
broad
emission
band
from
700
to
1250
nm,
which
covers
first
second
windows.
pc‐LED
with
radiant
flux
12.07
mW@350
mA
realized
based
450
blue
LED
chip.
The
ability
high‐power
light
penetrate
human
tissues
observed
successfully.
Additionally,
in
,
luminescence
Cr
under
808
laser
excitation
achieved
time.
Angewandte Chemie International Edition,
Journal Year:
2021,
Volume and Issue:
60(26), P. 14644 - 14649
Published: April 6, 2021
Abstract
Near‐infrared
(NIR)‐emitting
phosphor
materials
have
been
extensively
developed
for
optoelectronic
and
biomedical
applications.
Although
Cr
3+
‐activated
phosphors
widely
reported,
it
is
challenging
to
achieve
ultra‐broad
tunable
NIR
emission.
Here,
a
new
ultra‐broadband
NIR‐emitting
LiIn
2
SbO
6
:Cr
with
emission
peak
at
965
nm
full‐width
half
maximum
of
217
reported.
Controllable
tuning
from
892
achieved
by
chemical
unit
cosubstitution
[Zn
2+
–Zn
]
[Li
+
–In
],
which
can
be
ascribed
the
upshift
4
T
2g
energy
level
due
strengthened
crystal
field.
Moreover,
greatly
enhanced,
FWHM
reaches
235
nm.
The
as‐prepared
luminescent
demonstrated
potential
in
night‐vision
spectroscopy
techniques.
This
work
proves
feasibility
strategy
‐doped
phosphors,
stimulate
further
studies
on
emission‐tunable
materials.
Advanced Optical Materials,
Journal Year:
2019,
Volume and Issue:
7(24)
Published: Sept. 23, 2019
Abstract
Photoluminescence
originated
from
doped
activators
in
the
solid
state
materials
usually
faces
challenge
of
concentration
quenching,
restricting
further
increase
photoluminescence
intensity.
Herein,
a
new
strategy
is
demonstrated
by
heavy
doping
Mn
2+
into
MgAl
2
O
4
,
leading
to
broad‐band
near‐infrared
(NIR)
emission
peaking
at
≈825
nm
with
full
width
half
maximum
≈125
nm,
as
well
high
internal
quantum
efficiency
≈53%
upon
450
laser
excitation.
Density
functional
theory
calculation
and
extend
X‐ray
absorption
fine
structure
provide
understanding
Al
3+
/Mn
disorder
–Mn
aggregation
spinel
Mg
1–x
:
x
content,
which
enables
formation
superexchange
coupled
IV
–
VI
pair.
The
NIR
light‐emitting
diodes
fabricated
blue
chip
0.50
:0.50Mn
phosphor
gives
output
power
≈78.41
mW
under
driven
current
120
mA,
night‐vision
application
light
source
dark
demonstrated.
This
work
opens
paths
for
rational
design
efficient
emitting
phosphor,
also
provides
insights
luminescence
applications.
Journal of Materials Chemistry C,
Journal Year:
2019,
Volume and Issue:
8(3), P. 1095 - 1103
Published: Nov. 29, 2019
Broadband
cyan-emitting
Ca2LuZr2(AlO4)3:Ce3+
garnet
phosphors
enabled
to
fill
the
cyan
gap
in
emission
spectra
of
near-ultraviolet-pumped
warm-white
LEDs,
thus
resulting
improved
color
rendering
index.
Inorganic Chemistry Frontiers,
Journal Year:
2020,
Volume and Issue:
7(6), P. 1467 - 1473
Published: Jan. 1, 2020
LaMgGa11O19:Cr3+
phosphor
was
synthesized
successfully,
showing
broadband
NIR
emission
centered
at
∼770
nm,
high
efficiency
and
excellent
thermal
quenching
resistance
for
pc-LEDs.
Abstract
The
development
of
highly
efficient
and
thermally
stable
broadband
near‐infrared
(NIR)
luminescence
materials
is
a
great
challenge
to
advance
the
next‐generation
smart
NIR
light
source.
Benefitting
from
low
phonon
energy
relatively
weak
electron
coupling
effect
fluoride,
K
2
NaScF
6
:Cr
3+
phosphor
designed
obtained,
which
demonstrates
full
width
at
half
maximum
100
nm
peaking
≈765
nm.
Upon
blue
excitation,
exhibits
high
quantum
efficiency
74%
its
emission
intensity
150
°C
can
keep
89.6%
initial
value
25
°C.
An
output
power
159.72
mW
(input
electric
power,
1094
mW)
with
photoelectric
conversion
≈14.60%,
light‐emitting
diode
(LED)
device
presented
based
on
this
phosphor.
Furthermore,
applying
high‐power
phosphor‐converted
LED
as
lighting
source,
clear
quick
veins
imaging
recognition
in
fingers,
palm,
wrist,
arm
human
hand
are
first
realized,
suggesting
has
promise
practical
applications.
ACS Applied Materials & Interfaces,
Journal Year:
2021,
Volume and Issue:
13(15), P. 18274 - 18282
Published: April 8, 2021
Recently,
trivalent
chromium
ion
doped
phosphors
have
exhibited
significant
application
potential
in
broadband
near-infrared
(NIR)
phosphor-converted
light-emitting
diodes
(pc-LEDs).
However,
developing
an
NIR
phosphor
with
both
broad
emission
bandwidth
and
excellent
luminescence
thermal
stability
is
still
a
great
challenge.
Here,
we
demonstrate
phosphor,
ScF3:Cr3+,
which
can
fulfill
conditions
simultaneously.
The
prepared
show
the
range
of
700
to
1100
nm,
full
width
at
half-maximum
(FWHM)
140
nm
peaking
853
nm.
These
also
(the
intensity
ScF3:Cr3+
keeps
85.5%
150
°C
compared
value
room
temperature).
An
pc-LED
based
on
blue
LED
chips
was
fabricated
tested.
results
that
yield
strong
emission.
This
work
not
only
provides
promising
for
pc-LEDs
but
has
important
guiding
significance
effect
synthesis
properties
Cr3+-doped
fluorides.