Ultrafast Photonics of Ternary Re_xNb_(1–x)S₂ in Fiber Lasers

ACS Applied Materials & Interfaces, Journal Year: 2021, Volume and Issue: 13(24), P. 28721 - 28728

Published: June 9, 2021

Two-dimensional (2D) transition metal chalcogenides (TMCs) become more attractive upon addition of a third element owing to their unique structure and remarkable physical chemical properties, which endow these materials with considerable potential for applications in nanoscale devices. In this work, RexNb(1–x)S2-based saturable absorber (SA) device ultrafast photonics is studied. The assembled by placing RexNb(1–x)S2 nanosheets thickness 1–3 nm onto microfiber increase compatibility an all-fiber laser cavity. prepared exhibits modulation depth 24.3%, saturation intensity 10.1 MW/cm2, nonsaturable loss 28.5%. Furthermore, the used generate ultrashort pulses erbium-doped fiber (EDF) At pump power 260 mW, EDF operates conventional soliton mode-locked region. pulse width 285 fs, repetition frequency 61.993 MHz. particular, bound-state mode-locking operation successfully obtained range 300–900 mW. are formed doubling identical solitons temporal interval 0.8 ps. output as high 47.9 123.61 These results indicate that proposed SAs have comparable properties currently 2D provide basis application field photonics.

Language: Английский

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Evolution of low-dimensional material-based field-effect transistors

Nanoscale, Journal Year: 2021, Volume and Issue: 13(10), P. 5162 - 5186

Published: Jan. 1, 2021

The recent research progress on low-dimensional material-based FETs, including their classification and applications, has been reviewed.

Language: Английский

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Tuning Rashba effect, band inversion, and spin-charge conversion of Janus XSn2Y monolayers via an external field

Physical review. B./Physical review. B, Journal Year: 2021, Volume and Issue: 103(7)

Published: Feb. 12, 2021

We predict, through first-principles calculations, a different class of Janus two-dimensional (2D) materials $X{\mathrm{Sn}}_{2}Y$ ($X, Y=\mathrm{P}$, As, Sb, and Bi; $X\ensuremath{\ne}Y$). It has found that these 2D monolayers have intrinsic polarization effect owing to presence mirror-symmetry breaking. $\mathrm{Sb}{\mathrm{Sn}}_{2}\mathrm{Bi}, \mathrm{As}{\mathrm{Sn}}_{2}\mathrm{Sb}$, $\mathrm{P}{\mathrm{Sn}}_{2}\mathrm{As}$ semiconducting feature, however $\mathrm{As}{\mathrm{Sn}}_{2}\mathrm{Bi}, \mathrm{P}{\mathrm{Sn}}_{2}\mathrm{Bi}$, $\mathrm{P}{\mathrm{Sn}}_{2}\mathrm{Sb}$ metallic feature with inverted band structure. When the spin-orbit coupling (SOC) is considered, double Rashba effects are in $\mathrm{Sb}{\mathrm{Sn}}_{2}\mathrm{Bi}$. Band inversion SOC leads unexpected spin-valley splitting characteristics $\mathrm{P}{\mathrm{Sn}}_{2}\mathrm{Sb}$, showing circle-type Berry curvature. The electronic spin properties tunable via applying external strain electric field, resulting Rashba-type spin-splitting, ${p}_{z}/{p}_{xy}$ inversion, Dirac cone. In particular, sombrero dispersion Van Hove singularity revealed by exerting tensile strain. therefore investigate Lifshitz transition inverse Edelstein (also referred as spin-charge conversion) strained $\mathrm{P}{\mathrm{Sn}}_{2}\mathrm{As}$. On basis k\ifmmode\cdot\else\textperiodcentered\fi{}p model clean limit, Drude coefficient for conversion estimated be about 0.086 $e$/\AA{} +3%. Finally, synergic field considered manipulate conversion. Our results provide effect, transition,

Language: Английский

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Growth of two-dimensional Janus MoSSe by a single in situ process without initial or follow-up treatments

NPG Asia Materials, Journal Year: 2022, Volume and Issue: 14(1)

Published: Feb. 25, 2022

Abstract Two-dimensional (2D) Janus transition metal dichalcogenides (TMDCs) are highly attractive as an emerging class of 2D materials, but only a few methods available for fabricating them. These rely on the initial growth TMDCs in one process, followed by additional plasma or high-temperature (T) process. To overcome these drawbacks, we employ new approach NaCl-assisted single-process chemical vapor deposition, which consists three steps that proceed altering temperature situ. In first step, MoS 2 is deposited onto SiO /Si substrate with Mo and S atoms activated different zones. second vacancies formed upper layer grown annealing. third filled Se atoms. Throughout steps, NaCl lowers melting point constituent atoms, while T each zone properly controlled. The mechanism clarified separate annealing experiment does not involve supply results highlight simple cost-effective growing MoSSe, more useful fundamental studies device applications.

Language: Английский

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Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications

Chemical Science, Journal Year: 2022, Volume and Issue: 13(26), P. 7707 - 7738

Published: Jan. 1, 2022

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia industry because of unusual physical chemical properties. They offer numerous applications, such as electronic, optoelectronic, spintronic devices, addition to energy storage conversion. Atomic structural modifications van der Waals layered materials are required achieve unique versatile properties for advanced applications. This review presents a discussion on the atomic-scale 2D TMDs

Language: Английский

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