Chemistry of Inorganic Materials,
Journal Year:
2023,
Volume and Issue:
1, P. 100023 - 100023
Published: Nov. 13, 2023
Photodetector
is
an
essential
component
in
many
optoelectronic
devices
nowadays
that
converts
the
incoming
optical
signal
into
electrical
signal.
The
need
for
multi-spectral
photoelectric
detection
same
scene
promotes
application
of
wide
spectrum
detection.
Halide
hybrid
perovskites
can
be
excellent
candidates
wide-spectrum
photodetectors
which
cover
a
spectral
range
UV–visible–infrared.
However,
intrinsic
defects
perovskite
material
and
among
various
functional
layers
might
increase
dark
current
seriously
reduce
photodetector
device
performance.
Therefore,
reducing
improving
spectra-detection
performance
ultra-wideband
radiation
are
main
targets
investigation
high-efficient
photodetectors.
In
this
mini-review,
parameters
determine
their
effects
on
discussed
first
time.
Then
work
evaluated
promising
approaches
to
solve
defect-dependent
recombination
We
further
outlooked
effective
application.
Abstract
Filterless
perovskite
narrowband
photodetectors
(PNPDs)
are
highly
demanded
in
color
and
spectral
discrimination,
which
typically
demonstrated
by
charge
collection
narrowing
(CCN)
effect
of
single
crystals,
showing
a
limited
sensing
area
slow
response
speed.
Here,
fast‐response,
high‐sensitivity
PNPDs
using
spin‐deposited
polycrystalline
2D
(poly‐2D)
Ruddlesden–Popper
(RP)
films
with
thickness
≈3.6
µm.
The
strong
excitonic
light
absorption
diffusion
length
poly‐2D
RP
perovskites
enable
favored
long‐wavelength
significant
suppression
short‐wavelength
to
further
strengthen
the
CCN
effect.
In
particular,
photodetection
properties,
as
well
rejection
ratio
central
wavelength,
can
be
finely
tuned
an
alkyl
chain
spacer
cations.
optimized
devices
achieve
narrow
full‐width
at
half‐maximum
12.7
nm,
record
high
peak
specific
detectivity
1.09
×
10
12
Jones
ultrafast
speed
rise/fall
times
5.6/11.5
µs,
outperform
published
similar
PNPDs.
Moreover,
large‐area
array
6
is
fabricated
consistency,
for
efficient
shape
discrimination
demonstrations.
This
facile
versatile
approach
sheds
on
practical
applications
high‐performance
filterless
The Journal of Physical Chemistry Letters,
Journal Year:
2025,
Volume and Issue:
unknown, P. 4220 - 4226
Published: April 21, 2025
Halide
perovskite
memristors
are
rapidly
emerging
as
promising
candidates
in
the
fields
of
neural
network
construction,
logic
operation,
and
biological
synaptic
simulation.
Understanding
resistive
switching
mechanism,
yet,
is
crucial
for
ensuring
stability
reproducibility
device
performance.
Here,
we
prepare
quasi-2D
perovskites
with
enhanced
performance
through
optimization
molecular,
solvents,
dimensions.
Subsequently,
process
directly
observed
by
a
nondestructive
situ
photoluminescence
(PL)
imaging
microscope.
In
addition,
elemental
composition
conductive
filaments
(CFs)
analyzed,
showing
that
devices
active
metal
top
electrodes
allow
presence
both
CFs
halogen
vacancy
during
process.
This
work
provides
valuable
insights
into
mechanisms
enhances
prospects
their
applications.
ACS Applied Materials & Interfaces,
Journal Year:
2023,
Volume and Issue:
15(27), P. 32647 - 32655
Published: June 26, 2023
Organic-inorganic
lead
halide
perovskite
materials
have
received
great
attention
in
recent
years.
However,
the
poor
stability
of
these
severely
limits
commercial
application
devices.
Here,
we
used
thiophene-2-ethylammonium
iodide
(TEAI)
material
as
organic
spacer
NH4SCN
and
NH4Cl
dual
additives
to
realize
high-stability
two-dimensional
(2D)/three-dimensional
(3D)
thin
films
for
photodetectors.
Then,
investigated
different
effects
on
orientation
crystallinity
films.
At
room
temperature,
optimized
2D/3D
photodetectors
exhibit
good
performance
with
high
external
quantum
efficiency
(EQE)
(72%),
large
responsivity
(0.36
A/W),
detectivity
(2.46
×
1012
Jones
at
bias
0
V),
response
frequency
(1.7
MHz),
improved
(retains
90%
photocurrent
after
2000
h
storage
RT
10%
RH
conditions).
Based
devices,
a
dual-channel
optical
transport
system
light-intensity
adder
are
achieved.
The
results
this
study
indicate
that,
simple
process,
TEAI
dual-additives
based
promising
applications
communication
systems.
Nanotechnology,
Journal Year:
2023,
Volume and Issue:
34(31), P. 315202 - 315202
Published: April 28, 2023
Last
decades
have
witnessed
the
rapid
development
of
ultraviolet
(UV)
photodetectors
in
diversity
applications.
The
III-nitride
semiconductor
and
metal
halide
perovskite
both
performed
promising
UV-sensing
optoelectronic
properties.
However,
they
are
still
suffering
from
either
high
temperature
epitaxial-growth
or
low
photocurrent
generated
UV
range.
In
this
work,
we
demonstrate
an
innovative
MAPbCl3/GaN
particle
hybrid
device
with
all-solution-processed
deposition
methods.
Comparing
to
control
MAPbCl3photoconductors,
photo-sensing
ability
optimal
concentration
GaN
particles
is
more
than
one
order
magnitude
enhanced,
report
a
responsivity
86
mA
W-1,
detectivity
3.1
×
1011Jones
rise/fall
time
1.1/10.7
ms
at
360
nm.
increment
could
be
attributed
enhanced
absorption
facilitated
charge
separation
photoconductive
gain
heterojunction.
This
work
paves
pathway
towards
large-scale
low-cost
versatile
Applied Physics Letters,
Journal Year:
2024,
Volume and Issue:
124(14)
Published: April 1, 2024
This
study
investigated
the
temperature-dependent
electroluminescent
(EL)
performance
of
InGaN-based
amber
micro-light-emitting
diodes
(μLEDs)
with
a
diameter
40
μm
using
an
epitaxial
tunnel
junction
(TJ)
contact
for
current
spreading.
The
TJ-μLEDs
could
achieve
high
electrical
efficiency
0.935
and
remarkable
wall-plug
4.3%
at
1
A/cm2
room
temperature,
indicating
excellent
injection
TJ
layers
regrown
by
molecular
beam
epitaxy.
Moreover,
forward
bias
be
further
improved
elevated
temperatures.
improvement
can
explained
enhanced
tunneling
probability
acceptor
ionization
in
p-GaN
based
on
theoretical
simulation.
redshift
coefficient,
which
describes
peak
wavelength
shift,
is
obtained
as
small
0.05
nm/K,
high-temperature-to-room-temperature
EL
intensity
ratio
calculated
>0.56
even
low
density
0.5
temperatures
up
to
80
°C.
thermal
droop
behavior
was
attributed
non-radiative
recombination,
confirmed
shorter
carrier
lifetime
measured
Advanced Functional Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Dec. 9, 2024
Abstract
The
nonradiative
recombination
presented
at
the
quasi‐2D
(Q‐2D)
Ruddlesden–Popper
perovskite
surface/interface
limits
overall
performance
of
photoelectric
devices.
Here,
a
dual‐sided
field
effect
passivation
(FEP)
strategy
to
reduce
is
reported.
By
inserting
high/low
work
function
dielectric
layers
between
layer
and
hole/electron
transport
layers,
trap
state
density
effectively
reduced,
resulting
in
longer
carrier
lifetime.
Besides,
dynamics
synergistic
mechanism
chemical
(CP)
FEP
are
clarified
detail.
interfacial
polarization
caused
by
difference
different
prevents
Shockley–Read–Hall
(SRH)
loss
photogenerated
electrons/holes
improves
charge
transport.
Benefiting
from
it,
passivated
photodetector
has
been
improved
effectively,
achieving
dark
current
9.62
×
10
−11
A,
linear
dynamic
range
(LDR)
width
171.4
dB,
an
ultra‐fast
response
time
low
430
ns,
which
currently
highest
reported
detection
indicators
Q‐2D
photodetectors.
In
addition,
intercalation
inhibits
decomposition
greatly
environmental
stability.
future,
exploring
CP
materials
for
films
one
development
directions
studying
efficient
stable
IntechOpen eBooks,
Journal Year:
2024,
Volume and Issue:
unknown
Published: July 23, 2024
Two-dimension
(2D)
hybrid
organic-inorganic
perovskites
(HOIPs)
are
formed
naturally
multiple-quantum-well
structures
with
a
much
larger
carrier
binding
energy,
which
possess
stable
excitons
even
at
room
temperature.
In
addition,
2D
HOIPs
allow
us
to
exfoliate
them
into
ultrathin
flakes
and
stack
various
heterostructures,
extending
their
photophysical
properties.
Therefore,
promising
candidates
for
optoelectronic
device
applications,
such
as
light-emitting
diodes,
lasing,
etc.
this
chapter,
summary
of
the
crystal
HOIP
crystals
excitonic
properties,
current
research
progress
heterostructures
revealed.
Next,
high-pressure
technology
will
be
studied
in
detail
on
effective
engineering
exciton
properties
toward
significantly
optimizing
functionalities.
Finally,
is
given,
strategy
manipulation
perovskite-based
rationalized
next-generation
high-performance
devices.
Chemistry of Inorganic Materials,
Journal Year:
2023,
Volume and Issue:
1, P. 100023 - 100023
Published: Nov. 13, 2023
Photodetector
is
an
essential
component
in
many
optoelectronic
devices
nowadays
that
converts
the
incoming
optical
signal
into
electrical
signal.
The
need
for
multi-spectral
photoelectric
detection
same
scene
promotes
application
of
wide
spectrum
detection.
Halide
hybrid
perovskites
can
be
excellent
candidates
wide-spectrum
photodetectors
which
cover
a
spectral
range
UV–visible–infrared.
However,
intrinsic
defects
perovskite
material
and
among
various
functional
layers
might
increase
dark
current
seriously
reduce
photodetector
device
performance.
Therefore,
reducing
improving
spectra-detection
performance
ultra-wideband
radiation
are
main
targets
investigation
high-efficient
photodetectors.
In
this
mini-review,
parameters
determine
their
effects
on
discussed
first
time.
Then
work
evaluated
promising
approaches
to
solve
defect-dependent
recombination
We
further
outlooked
effective
application.
