Nanostructured NiS 2 -based flexible smart sensors for human respiration monitoring DOI
Trishala R. Desai, Aashi Gupta, Chitra Gurnani

et al.

Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences, Journal Year: 2024, Volume and Issue: 382(2281)

Published: Sept. 9, 2024

The growing demand for wearable healthcare devices has led to an urgent need cost-effective, wireless and portable breath monitoring systems. However, it is essential explore novel nanomaterials that combine state-of-the-art flexible sensors with high performance sensing capabilities along scalability industrially acceptable processing. In this study, we demonstrate a highly efficient NiS 2 -based capacitive sensor fabricated via solution-processible route using single-source precursor [Ni{S P(OPr) } ]. developed could precisely detect the human respiration rate exhibit rapid responsiveness, exceptional sensitivity selectivity at ambient temperatures, ultra-fast response recovery. device effectively differentiates exhaled patterns including slow, fast, oral nasal breath, as well post-exercise rates. Moreover, shows outstanding bending stability, repeatability, reliable robust capable of contactless sensing. was further employed user-friendly interface facilitate smartphone-enabled real-time This work opens up numerous avenues sustainable versatile potential applications Internet Things-based electronics. article part theme issue ‘Celebrating 15th anniversary Royal Society Newton International Fellowship’.

Language: Английский

Facile Solution-Processed Deposition of Bi2S3 Nanostructures for a Highly Sensitive and Selective Room-Temperature NO2 Sensor DOI
Sayali Shrishail Harke,

Y. M. Jadhav,

V. B. Patil

et al.

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 31, 2025

In this work, we present an approach for utilizing pristine Bi2S3 as a sensing material the detection of NO2 gas at room temperature. Spanish oyster-like hierarchical nanostructures, with diameter 832 nm and Brunauer–Emmett–Teller (BET) surface area 20.56 m2/g, were grown using [Bi{S2P(O(Pr)2)3}] complex via optimized, one-step, low-temperature, in situ solvothermal process. contrast, spin-coating method resulted impurities even after annealing step. X-ray diffraction (XRD), Raman, selected (SAED), high-resolution transmission electron microscopy (HRTEM) analyses confirmed orthorhombic bismuthinite phase calculated band gap 2.82 eV. The Bi2S3-based sensor exhibited exceptional sensitivity selectivity toward NO2, surpassing other gases such CO2, NH3, H2S, C2H6O Specifically, demonstrated high response 39.4%, rapid response/recovery times (14/257 s), excellent repeatability, stability (30 days) under 100 ppm exposure. enhanced performance temperature is attributed to competitive adsorption on structure Bi2S3, facilitating increased charge transfer.

Language: Английский

Citations

0
Sustainable in-situ synthesis of BaS2:Cu8S5:LaS tri-metal chalcogenide via diethyldithiocarbamate precursors for high-performing energy storage systems DOI
Shaan Bibi Jaffri, Khuram Shahzad Ahmad, Lin Wang

et al.

Materials Science and Engineering B, Journal Year: 2024, Volume and Issue: 307, P. 117537 - 117537

Published: June 28, 2024

Language: Английский

Citations

2
Annealing effect on Sb2S3/c-Si structure for photovoltaic applications DOI
Adel Chihi

Applied Physics A, Journal Year: 2024, Volume and Issue: 130(8)

Published: July 2, 2024

Language: Английский

Citations

2
Fabrication of Sb2S3/Sb2Se3 heterostructure for potential resistive switching applications DOI Creative Commons
Pukhraj Prajapat, Pargam Vashishtha,

Preeti Goswami

et al.

Nano Express, Journal Year: 2023, Volume and Issue: 5(1), P. 015005 - 015005

Published: Dec. 18, 2023

Abstract The exponential growth of large data and the widespread adoption Internet Things (IoT) have created significant challenges for traditional Von Neumann computers. These include complex hardware, high energy consumption, slow memory access time. Researchers are investigating novel materials device architectures to address these issues by reducing improving performance, enabling compact designs. A new study has successfully engineered a heterostructure that integrates Sb 2 Se 3 S , resulting in improved electrical properties. This generated interest its potential applications resistive switching. In this study, we demonstrated fabrication based on /Sb exhibits switching behavior. different resistance states can be switched between low levels when exposed an external bias (−1 V 0 1 V). It also good non-volatile characteristics, including power ratio (∼10 ), reliable endurance ). enables faster processing, reduces streamlines hardware designs, contributing computing advancements amidst modern challenges. approach revolutionize devices, leading more efficient solutions big processing IoT technologies.

Language: Английский

Citations

4
Multistate nonpolar resistive switching in nickel embedded polyoxovanadate for high density data storage DOI

Nivedya Thathron,

Bhimaraya R. Biradar,

Sushil Pandey

et al.

Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: 1003, P. 175496 - 175496

Published: July 9, 2024

Language: Английский

Citations

1
Exploring the Conductive Dynamics of Sb2(S,Se)3-Based Memristors for Non-Volatile Memory and Neuromorphic Applications DOI
Yi Yang, Yang Yang, Lei Zheng

et al.

The Journal of Physical Chemistry Letters, Journal Year: 2024, Volume and Issue: unknown, P. 131 - 139

Published: Dec. 20, 2024

Advancing the development of novel materials or architectures for random access memories, coupled with an in-depth understanding their intrinsic conduction mechanisms, holds potential to transcend conventional von Neumann bottleneck. In this work, a memristor based on Sb2(S,Se)3 material alloy S and Se was fabricated. A systematic investigation correlation between Se/(S + Se) ratio memristive performance revealed that Ag/Sb2(S,Se)3/FTO behavior is uniquely associated formation disruption anion vacancies silver filaments. The resultant devices demonstrated good resistive switching, durability surpassing 3 × 104 cycles, showcasing multilevel conductivity states. Furthermore, these successfully emulated synaptic functionality. This research has established foundation mechanisms antimony chalcogenide artificial synapses.

Language: Английский

Citations

1
Annealing Effect on Sb2s3/C-Si Structure for Photovoltaic Applications DOI
Adel Chihi

Published: Jan. 1, 2024

Tandem solar cells present an efficient way to boost energy conversion, potentially advancing performance and widespread photovoltaic technology adoption. In this study, a novel approach was employed grow Sb2S3 thin films onto c-Si (100) substrate using sol-gel dip-coating technique. The as-deposited samples exhibited amorphous nature, indicating the necessity for thermal annealing step. impact of temperature on phase purity, structure, morphological, optical, properties synthesized hetero-structure Sb2S3/c-Si examined secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), Energy dispersive spectroscopy (EDS), UV-visible spectroscopy. SIMS analysis revealed uniformity consistent composition in deposited with thickness approximately 700 nm silicon substrate. XRD measurements polycrystalline structure all after argon atmosphere, except one. film annealed at 320°C highest crystallite size about 53 nm. optical parameters such as refractive index n(λ) extinction coefficient k(λ) were estimated Fresnel matrix method. heterojunction obvious rectification characteristics according current vs voltage (I-V) curve under dark conditions. illuminated density-voltage characteristic best hetero-junction Ag/ (100)/Al exhibits short-circuit density (Jsc) 13.16 mA cm−2, open circuit (Voc) 730 mV, fill factor (FF) 0.62 yielding power conversion efficiencies (PCE) 6.15%.under AM 1.5 sun.

Language: Английский

Citations

0
Reliable Low‐Current and Multilevel Memristive Electrochemical Neuromorphic Devices with Semi‐Metal Sb Filament DOI

Chenyu Zhuge,

Yukun Zhang,

Jiandong Jiang

et al.

Small, Journal Year: 2024, Volume and Issue: unknown

Published: June 11, 2024

Abstract Memristors are used in artificial neural networks owing to their exceptional integration capabilities and scalability. However, traditional memristors hampered by limited resistance states randomness, which curtails application. The migration of metal ions critically influences the number conductance linearity weight updates. Semi‐metal filaments can provide subquantum changes due smaller single‐atom conductance, such as Sb (≈0.01 G 0 = 7.69 × 10 −7 S). Here, a memristor featuring an active electrode composed semi‐metal is introduced for first time. This demonstrates precise control, large on/off ratio, consistent switching, prolonged retention exceeding 5 s. Density functional theory (DFT) calculations characterization methods reveal formation during set process. interaction between O within dielectric layer facilitates filaments' ability preserve morphology absence electric fields.

Language: Английский

Citations

0
Microreactor Assisted Soft Lithography of Nanostructured Antimony Sulfide Thin Film Patterns: Nucleation, Growth and Application in Solid State Batteries DOI Creative Commons

Bryan Chun,

V. Vinay K. Doddapaneni, Marcos Lucero

et al.

Energy Advances, Journal Year: 2024, Volume and Issue: 3(9), P. 2200 - 2211

Published: Jan. 1, 2024

This study explores the microreactor-assisted soft lithography (MASL) method for direct, one-step synthesis and patterning of additive-free antimony sulfide (Sb 2 S 3 ) nanostructured thin films.

Language: Английский

Citations

0
Nanostructured NiS 2 -based flexible smart sensors for human respiration monitoring DOI
Trishala R. Desai, Aashi Gupta, Chitra Gurnani

et al.

Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences, Journal Year: 2024, Volume and Issue: 382(2281)

Published: Sept. 9, 2024

The growing demand for wearable healthcare devices has led to an urgent need cost-effective, wireless and portable breath monitoring systems. However, it is essential explore novel nanomaterials that combine state-of-the-art flexible sensors with high performance sensing capabilities along scalability industrially acceptable processing. In this study, we demonstrate a highly efficient NiS 2 -based capacitive sensor fabricated via solution-processible route using single-source precursor [Ni{S P(OPr) } ]. developed could precisely detect the human respiration rate exhibit rapid responsiveness, exceptional sensitivity selectivity at ambient temperatures, ultra-fast response recovery. device effectively differentiates exhaled patterns including slow, fast, oral nasal breath, as well post-exercise rates. Moreover, shows outstanding bending stability, repeatability, reliable robust capable of contactless sensing. was further employed user-friendly interface facilitate smartphone-enabled real-time This work opens up numerous avenues sustainable versatile potential applications Internet Things-based electronics. article part theme issue ‘Celebrating 15th anniversary Royal Society Newton International Fellowship’.

Language: Английский

Citations

0