Sustainable Energy & Fuels,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Jan. 1, 2024
An
n/p/p
heterojunction
solar
cell
taps
the
synergy
between
photosensitizers:
CdS
(n-type)
and
CZTS
(p-type)
nanocrystals
Ag
3
SbS
quantum
dots
to
yield
an
efficiency
of
9.76%.
The
tunability
of
the
energy
bandgap
in
near-infrared
(NIR)
range
uniquely
positions
colloidal
lead
sulfide
(PbS)
quantum
dots
(QDs)
as
a
versatile
material
to
enhance
performance
existing
perovskite
and
silicon
solar
cells
tandem
architectures.
desired
narrow
(NBG)
PbS
QDs
exhibit
polar
(111)
nonpolar
(100)
terminal
facets,
making
effective
surface
passivation
through
ligand
engineering
highly
challenging.
Despite
recent
breakthroughs
engineering,
NBG
suffer
from
uncontrolled
agglomeration
solid
films,
leading
increased
disorder
trap
formation.
limited
NIR
transparency
commonly
used
indium-doped
tin
oxide
(ITO)
electrodes
inadequate
radiation
commercially
available
simulators
further
compromise
true
cells.
Here,
we
employ
hybrid
strategy
based
on
inorganic
cadmium
halide
organic
thiol
molecules,
partial
substitution
Pb
atoms
with
Cd
heteroatoms.
This
substantially
reduces
undesired
QD
fusion
improving
photophysical
electronic
properties.
By
modulating
thickness
ITO
layer
managing
refraction
loss
ZnO
coating,
improved
above
80%.
We
combine
an
light
source
simulator
achieve
near-ideal
spectral
matching
for
broader
standard
AM1.5G
illumination.
Enhancements
QDs,
improvements
electrodes,
matched
setup
help
us
cell
power
conversion
efficiencies
12.4%,
4.48%,
1.37%
under
AM
1.5G,
filter,
filter
illuminations,
respectively.
A
record
open-circuit
voltage
(Voc)
0.54
V
short-circuit
current
density
(Jsc)
38.5
mA/cm2
are
achieved
1.5G
attribute
these
advancements
photovoltaic
parameters
reduction
Urbach
tail
states
intermediate
originating
superior
QDs.
Materials Horizons,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 1, 2025
Quantum
dots
have
garnered
significant
interest
in
perovskite
solar
cells
(PSCs)
due
to
their
stable
chemical
properties,
high
carrier
mobility,
and
unique
features
such
as
multiple
exciton
generation
excellent
optoelectronic
characteristics
resulting
from
quantum
confinement
effects.
This
review
explores
dot
properties
applications
photoelectronic
devices,
including
synthesis
deposition
processes.
sets
the
stage
for
discussing
diverse
roles
transport,
absorber,
interfacial
layers
of
PSCs.
We
thoroughly
examine
advances
defect
passivation,
energy
band
alignment,
crystallinity,
device
stability,
broader
light
absorption.
In
particular,
novel
approaches
enhance
photoelectric
conversion
efficiency
(PCE)
dot-enhanced
are
highlighted.
Lastly,
based
on
a
comprehensive
overview,
we
provide
forward-looking
outlook
advanced
fabrication
its
impact
enhancing
photovoltaic
performance
cells.
offers
insights
into
fundamental
mechanisms
that
endorse
improved
PSC
performance,
paving
way
further
development
dot-integrated
Theoretical and Natural Science,
Journal Year:
2025,
Volume and Issue:
79(1), P. 161 - 166
Published: Jan. 15, 2025
With
the
depletion
of
non-renewable
resources,
renewable
energy
sources
like
solar
and
hydrogen
will
play
an
important
role
in
future.
Efficient
stable
utilization
these
has
become
a
primary
focus
research.
Low-dimensional
semiconductor
nanomaterials,
including
quantum
dots,
nanowires,
thin
films,
exhibit
unique
properties
due
to
their
size
being
close
or
smaller
than
certain
characteristic
lengths
material.
As
dimensionality
decreases,
effects
more
pronounced,
leading
significant
changes
material's
electronic,
optical,
thermal
properties.
This
paper
focuses
on
improvement
performance
various
types
cells
through
low-dimensional
nanomaterials
while
discussing
challenges
application.
study
shows
that
nanostructured
materials
can
enhance
conversion
efficiency,
stability
lifespan,
providing
new
directions
methods
for
future
technology
development
Materials Chemistry Frontiers,
Journal Year:
2024,
Volume and Issue:
8(23), P. 3973 - 3984
Published: Jan. 1, 2024
F/ZnO-QDs
of
R
∼
3
nm
and
relative
quantum
yield
22%
are
obtained
via
wet-precipitation
at
5
at%
nominal
F
content.
F/ZnO-NCs
30
nm,
high
surface
defects
photoactivity
the
solvothermal
route