Advances in Charge Carrier Mobility of Diketopyrrolopyrrole-Based Organic Semiconductors

Coatings, Journal Year: 2024, Volume and Issue: 14(9), P. 1080 - 1080

Published: Aug. 23, 2024

In recent years, the charge carrier mobility study of organic semiconductors has seen significant progress and surpassed that amorphous silicon thanks to development various molecular engineering, solution processing, external alignment methods. These advances have allowed implementation for fabricating high-performance electronic devices. particular, diketopyrrolopyrrole-based small-molecular polymeric garnered considerable research interest due their ambipolar charge-carrier properties. this article, we focus on conducting a comprehensive review previous studies are dedicated alignment, thermal annealing, engineering diketopyrrolopyrrole structures side-chain in order achieve oriented crystal orientation, optimized thin-film morphology, enhanced transport. By discussing these benchmark studies, work aims provide general insights into optimizing other high-mobility, solution-processed sheds lights realizing acceleration device applications.

Language: Английский

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Chemical Doping Reveals Band-like Charge Transport at Grain Boundaries in Organic Transistors

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: April 10, 2025

Organic semiconductors are highly promising as channel materials for energy-efficient, cost-effective, and flexible electronics. However, grain boundaries (GBs) can cause significant device performance variation, posing a major challenge the development of high-performance organic circuits. In this work, we effectively passivated GB-induced traps in monolayer thin-film transistors (OTFTs) via p-type doping with salt TrTPFB. The strategy broadens mobility edge, shielding energy barriers Coulomb scattering, promotes deeper nonlocalized hybridization states conduction. Consequently, charge transport mechanism transitions from multiple trapping release (MTR) to more band-like behavior, even when GBs present within channel. doped OTFTs demonstrate ultralow variation (1.4%) threshold voltage (4.9%), well record-low contact resistant RC = 0.6 Ω·cm, outperforming most single-crystal technologies. These metrics render polycrystalline films candidates industrial-scale

Language: Английский

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(F5PhO)2-F16-SiPc as an Air-Stable, High-Performance n-Type Semiconductor with Poor Cannabinoid Sensing Capabilities

RSC Applied Interfaces, Journal Year: 2024, Volume and Issue: unknown

Published: Jan. 1, 2024

(F 5 PhO) 2 -F 16 -SiPc is an air stable, n-type semiconductor for organic thin-film transistors (OTFTs), however the structural changes that enhance its stability likely cause lack of response to cannabinoids in a sensor.

Language: Английский

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Additive engineering for high-performance polythiophene gas sensors incorporating functional amine additive with strong binding energy for NO₂

Journal of Materials Chemistry C, Journal Year: 2024, Volume and Issue: 12(27), P. 9986 - 9992

Published: Jan. 1, 2024

The performance of a gas sensor was improved by incorporating organic additives with various amine functional groups into the P3HT active layer due to strong binding energy between and target gas.

Language: Английский

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Surmounting Erase-Operation Limit in Organic Charge-Trap Memories by Fine Tuning Electron Injection at Semiconductor/Heterobimetallic Electrode Contacts

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(51), P. 70746 - 70753

Published: Dec. 12, 2024

Heterobimetallic systems (HBS), known for their ability to facilitate the versatile design of surface workfunctions, offer significant potential as an electron-injection electrode layer organic semiconductors. In this paper, we propose a universal and effective strategy overcome limitations erase operation in charge-trap memory with small-bandgap semiconductor or diketopyrrolopyrrole-quaterthiophene-conjugated polymer (PDPP4T) by utilizing HBS-based source/drain (SD) electrodes. Conventional gold SD electrodes restrict electron injection into PDPP4T during electrical impose lower limit on erasing voltage required full threshold-voltage recovery. The HBS upshifted Fermi level toward lowest unoccupied molecular orbital enhanced operation, reducing achieving balance between programming voltages. addition, asymmetric structure was employed preventing decrease on-state drain current while maintaining optimal operation.

Language: Английский

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Effects of High Capacitance of Solution-Processed Polymer Heterojunction Gate Dielectrics on the Contact Resistance of Low-Voltage n-Channel Organic Transistors

Organic Electronics, Journal Year: 2024, Volume and Issue: unknown, P. 107191 - 107191

Published: Dec. 1, 2024

Language: Английский

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