Triazatetrabenzocorroles
(Tbc)
consist
of
a
class
molecules
derived
from
the
phthalocyanine
and
porphyrin
families
that
are
less
commonly
synthesized
utilized
in
applications
for
organic
electronics.
In
this
work,
we
have
oxy
phosphorus
Tbc
(POTbc)
integrated
it
as
an
semiconductor
thin
film
transistors
(OTFTs).
Both
bottom-gate
bottom-contact
(BGBC)
top-contact
(BGTC)
OTFTs
fabricated
with
POTbc
resulted
clear
p-type
performance
both
air
under
inert
conditions.
A
series
solution-based
silanes
thermally
evaporated
p-sexiphenylene
were
dielectric
surface
treatments
means
to
modify
energy
prior
depositing
films.
Other
fabrication
conditions
also
explored,
such
deposition
rate
POTbc,
substrate
temperature
during
deposition,
post-deposition
annealing.
Of
these,
optimized
POTbc-based
obtained
n-octadecyltrichlorosilane
(ODTS)-coated
substrates,
heated
which
afforded
average
field
effect
mobility
8.18
×
10–3
cm2
V–1
s–1
threshold
voltage
−23.2
V.
X-ray
diffraction
polarized
Raman
microscopy
indicated
significant
increase
crystallinity
morphology
more
molecular
face-on
configuration
when
deposited
on
ODTS-treated
surfaces.
These
results
represent
first
report
using
including
structure–property
relationships
related
optimization
device
performance.
ACS Applied Electronic Materials,
Journal Year:
2024,
Volume and Issue:
6(11), P. 8059 - 8067
Published: Oct. 21, 2024
An
extremely
sensitive
ammonia
(NH3)
sensor
was
developed
by
using
an
aligned
nanowires/thin
film
hybrid
channel
of
organic
thin
transistor
(OTFT).
Conjugated
polymer
poly(2,5-bis(3-tetradecylthiophen-2yl)thieno(3,2-b)thiophene)
(PBTTT-C14)
has
been
used
as
semiconductor
that
fabricated
via
"floating
transfer
method"
(FTM).
The
crystalline
fibrillar
microstructure
within
the
liquid
phase
mixed
solvent,
which
self-assembled
on
air–liquid
interface
through
FTM
method.
This
structured
then
transferred
a
cleaned
Si/SiO2
substrate,
whereas
Au
source–drain
electrodes
this
OTFT.
To
investigate
sensing
behavior
designed
OTFT,
various
low
concentrations
NH3
have
exposed
ranging
from
0.2
to
5
ppm.
From
accumulation
mode
drain
current
variation,
it
observed
is
toward
gas
with
response
about
75%
at
ppm,
limit
detection
(LOD)
∼0.67
confirms
its
applicability
lower
concentrations.
More
interestingly,
depletion
OTFT
reduces
∼200
times
during
investigation,
∼40
larger
variation
than
current.
Additionally,
these
variations
excellent
linearity
concentration.
also
exhibits
selectivity
and
sensitivity
gas,
can
satisfy
requirements
for
real-world
applications.
Journal of Materials Chemistry C,
Journal Year:
2024,
Volume and Issue:
12(27), P. 9986 - 9992
Published: Jan. 1, 2024
The
performance
of
a
gas
sensor
was
improved
by
incorporating
organic
additives
with
various
amine
functional
groups
into
the
P3HT
active
layer
due
to
strong
binding
energy
between
and
target
gas.
Deleted Journal,
Journal Year:
2024,
Volume and Issue:
245(1)
Published: Nov. 6, 2024
The
photophysical
properties
of
molecular
dyes
within
the
restricted
environment
'ultra-thin
films'
differ
from
those
observed
in
solution
and/or
solid
states.
In
ultra-thin
films,
various
types
aggregations
form,
leading
to
a
reduction
fluorescence
intensity
dye
molecules,
which
posses
significant
challenge
for
device
applications.
This
review
article
studies
impact
nano-clay
platelets
and
micellar
surfactants
aggregation
control
molecules
produced
by
'Langmuir–Blodgett
technique'.
is
aimimg
enhancing
efficiency
organic
dyes.
Advanced Electronic Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Nov. 18, 2024
Abstract
Understanding
the
complex
relationships
underlying
performance
of
organic
electronic
devices,
such
as
field‐effect
transistors
(OFETs),
requires
researchers
to
navigate
a
multi‐dimensional
parameter
space
that
includes
material
design,
solution
formulation,
fabrication
parameters,
and
device
geometry.
Herein,
recently
developed
materials
acceleration
platform
is
demonstrated,
named
RoboMapper,
perform
direct
on‐chip
OFETs
by
ultrasonic
meniscus
printing
using
silicon
phthalocyanine
(SiPc)
derivatives
semiconductor.
bis(tri‐
n
‐butylsilyl
oxide)
SiPc
((3BS)
2
‐SiPc)
exhibited
best
characterized
highest
electron
mobility
(
µ
e
).
Through
optical
microscopy
grazing‐incidence
wide‐angle
X‐ray
scattering
(GIWAXS),
favorable
(3BS)
‐SiPc
attributed
specific
film
morphology
molecular
packing
achieved
with
optimal
print
conditions.
Investigating
impact
deposition
parameters
reveals
crucial
role
solvent
evaporation
rate
speed
in
achieving
high‐quality
formation.
Overall,
conditions
for
devices
include
slow
speeds
fast
evaporating
solutions
mixture
co‐solvents
an
elevated
substrate
temperature.
The
results
this
work
reveal
distinct
between
conditions,
properties,
each
derivative
emphasize
necessity
high
throughput
experimentation
comprehensively
understand
process‐performance
semiconductors.
Triazatetrabenzocorroles
(Tbc)
consist
of
a
class
molecules
derived
from
the
phthalocyanine
and
porphyrin
families
that
are
less
commonly
synthesized
utilized
in
applications
for
organic
electronics.
In
this
work,
we
have
oxy
phosphorus
Tbc
(POTbc)
integrated
it
as
an
semiconductor
thin
film
transistors
(OTFTs).
Both
bottom-gate
bottom-contact
(BGBC)
top-contact
(BGTC)
OTFTs
fabricated
with
POTbc
resulted
clear
p-type
performance
both
air
under
inert
conditions.
A
series
solution-based
silanes
thermally
evaporated
p-sexiphenylene
were
dielectric
surface
treatments
means
to
modify
energy
prior
depositing
films.
Other
fabrication
conditions
also
explored,
such
deposition
rate
POTbc,
substrate
temperature
during
deposition,
post-deposition
annealing.
Of
these,
optimized
POTbc-based
obtained
n-octadecyltrichlorosilane
(ODTS)-coated
substrates,
heated
which
afforded
average
field
effect
mobility
8.18
×
10–3
cm2
V–1
s–1
threshold
voltage
−23.2
V.
X-ray
diffraction
polarized
Raman
microscopy
indicated
significant
increase
crystallinity
morphology
more
molecular
face-on
configuration
when
deposited
on
ODTS-treated
surfaces.
These
results
represent
first
report
using
including
structure–property
relationships
related
optimization
device
performance.
