Electrically-driven control of nanoscale chemical changes in amorphous complex oxide memristive devices DOI

W. Román Acevedo,

Myriam H. Aguirre, D. Rubi

et al.

Nanotechnology, Journal Year: 2024, Volume and Issue: 36(10), P. 105201 - 105201

Published: Dec. 23, 2024

In this paper we investigate the electrical response of amorphous complex oxide memristors under different stimulation. With help transmission electron microscopy and energy dispersive x-ray spectroscopy, observed that those devices stimulated with voltage display strong cationic segregation at nanoscale together partial crystallization layer. On other hand, current maintain their character no significative chemical changes. Our analysis also shows stimulation leads to a more stable memristive smaller cycle-to-cycle variations. These findings could contribute design reliable oxide-based underscore crucial effect has type applied on integrity reliability.

Language: Английский

Memristive oscillator to memristive map, energy characteristic DOI
Yitong Guo, Jun Ma, Xiaofeng Zhang

et al.

Science China Technological Sciences, Journal Year: 2024, Volume and Issue: 67(5), P. 1567 - 1578

Published: April 22, 2024

Language: Английский

Citations

23
Control-Etched Ti3C2Tx MXene Nanosheets for a Low-Voltage-Operating Flexible Memristor for Efficient Neuromorphic Computation DOI
Jeny Gosai, Mansi Patel, Lingli Liu

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(14), P. 17821 - 17831

Published: March 27, 2024

Hardware neural networks with mechanical flexibility are promising next-generation computing systems for smart wearable electronics. Overcoming the challenge of developing a fully synaptic plastic network, we demonstrate low-operating-voltage PET/ITO/p-MXene/Ag flexible memristor device by controlling etching aluminum metal ions in Ti3C2Tx MXene. The presence small fraction Al partially etched MXene (p-Ti3C2Tx) significantly suppresses operating voltage to 1 V compared 7 from (f-Ti3C2Tx)-based devices. Former devices exhibit excellent non-volatile data storage properties, robust ∼103 ON/OFF ratio, high endurance ∼104 cycles, multilevel resistance states, and long retention measured up ∼106 s. High stability ∼73° bending angle environmental robustness confirmed consistent switching characteristics under increasing temperature humid conditions. Furthermore, p-Ti3C2Tx is employed mimic biological synapse measuring learning–forgetting pattern cycles as potentiation depression. Spike time-dependent plasticity (STDP) based on Hebb's Learning rules also successfully demonstrated. Moreover, remarkable accuracy ∼95% recognizing modified patterns National Institute Standards Technology (MNIST) set just 29 training epochs achieved simulation. Ultimately, our findings underscore potential MXene-based versatile components neuromorphic computing.

Language: Английский

Citations

21
MXene‐Based Flexible Memory and Neuromorphic Devices DOI Creative Commons
Yan Li,

Guanglong Ding,

Yongbiao Zhai

et al.

Small, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 31, 2025

As the age of Internet Things (IoTs) unfolds, along with rapid advancement artificial intelligence (AI), traditional von Neumann-based computing systems encounter significant challenges in handling vast amounts data storage and processing. Bioinspired neuromorphic strategies offer a promising solution, characterized by features in-memory computing, massively parallel processing, event-driven operations. Compared to rigid silicon-based devices, flexible devices are lightweight, thin, highly stretchable, garnering considerable attention. Among materials utilized these transition metal carbides/nitrides (MXenes) particularly noteworthy their excellent flexibility, exceptional conductivity, hydrophilicity, which confer remarkable properties upon devices. Herein, comprehensive discussion is provided on applications MXenes memory This review covers basic principles device structures common parameters emerging as well synthesis, functionalization methods, distinct MXenes. The remaining future opportunities relevant also presented. can serve valuable reference lay cornerstone for practical feasible implementation technologies.

Language: Английский

Citations

1
Resistive Switching Layer-Modulated Volatile and Nonvolatile Memristors with Flexible and Controlled Transient Properties DOI

Mohammad Tauquir Alam Shamim Shaikh,

Ho Jung Jeon,

You Seung Rim

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: March 28, 2025

A growing concern for sustainable electronics to support a more eco-friendly future has significantly increased the demand flexible and biodegradable electronics. This work explores effect of using entirely biocompatible materials in memristor device achieve volatile nonvolatile resistive switching operations by modulating layer (SL) materials. The physically transient memristors (PTMs), based on an Mg electrode, polytrimethylene carbonate (PTMC)/polyvinylpyrrolidone (PVP) layer, chitosan/PVP substrate, exhibited both memory characteristics, as well quantized conductance (G0) states. PTM low set/reset voltage (<1 V), large (ROFF/RON) window (>106), long-term HRS/LRS retention (>103 s) characteristics during its operation. I-V pulse response revealed that occurs due constriction metallic filament atomic scale, with resistance ≤ 12.9 kΩ. LRS HRS are controlled within range (G0 = 2e2/h) bulk (G) three different concentrations (1:0.5, 1:1, 1:1.5) blended film (PTMC:PVP) exhibit polymer films display unique dual-phase surface morphology, facilitating ionic transportation. was encapsulated ALD-deposited Al2O3 enable controllable biodegradation process, allowing control over lifespan. tunable volatile/nonvolatile electrical demonstrate potential this implantable biomedical memory, secure hardware systems, wearable

Language: Английский

Citations

1
Switching Response in Organic Electrochemical Transistors by Ionic Diffusion and Electronic Transport DOI Creative Commons
Juan Bisquert, B.R. Ilyassov, Nir Tessler

et al.

Advanced Science, Journal Year: 2024, Volume and Issue: unknown

Published: July 25, 2024

The switching response in organic electrochemical transistors (OECT) is a basic effect which transient current occurs to voltage perturbation. This phenomenon has an important impact on different aspects of the application OECT, such as equilibration times, hysteresis dependence scan rates, and synaptic properties for neuromorphic applications. Here we establish model that unites vertical ion diffusion horizontal electronic transport analysis time-dependent OECTs. We use combination tools consisting physical analytical model; advanced 2D drift-diffusion simulation; experimental measurement poly(3-hexylthiophene) (P3HT) OECT. show reduction general simple equations average ionic/hole concentration inside film, produces Bernards-Malliaras conservation equation coupled with equation. provide classification pulse, correspondent effects transfer curves. shape transients basically related main control phenomenon, either ions during doping dedoping, or along channel length.

Language: Английский

Citations

6
Flexible Memristors for Implantable Applications DOI
Wei Lin, Bai Sun, Shuangsuo Mao

et al.

ACS Applied Nano Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 27, 2025

Language: Английский

Citations

0
Memristor-Based Circuit Design of Interweaving Mechanism of Emotional Memory in a Hippocamp-Brain Emotion Learning Model DOI
Yunlai Zhu, Yongjie Zhao, Junjie Zhang

et al.

Neural Networks, Journal Year: 2025, Volume and Issue: 186, P. 107276 - 107276

Published: Feb. 13, 2025

Language: Английский

Citations

0
Advances in Protein-Based Resistive Switching Memory: Fundamentals, Challenges, and Applications DOI
Hritinava Banik, Surajit Sarkar, Rahul Deb

et al.

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 11, 2025

Language: Английский

Citations

0
BDAPbI4 Dion Jacobson hybrid perovskite-based artificial nociceptors on biodegradable substrate DOI

Manish Khemnani,

Parth Thakkar,

Aziz Lokhandvala

et al.

Sensors and Actuators A Physical, Journal Year: 2024, Volume and Issue: 373, P. 115382 - 115382

Published: April 16, 2024

Language: Английский

Citations

3
Nanocrystalization effects on the structural, electrical and thermoelectric properties of 10KNbO3-10Fe2O3-50B2O3-30V2O5 glass for non-volatile electronic-memory devices DOI Creative Commons
M. M. El‐Desoky, Amany E. Harby, Ahmed E. Hannora

et al.

Applied Physics A, Journal Year: 2024, Volume and Issue: 130(11)

Published: Oct. 8, 2024

Abstract The composition: 10KNbO 3 -10Fe 2 O -50B -30V 5 (in mol%) is produced using the conventional melt quenching method and their corresponding glass–ceramic nanocomposites were studied. structural properties of as-quenched sample its heat-treated samples investigated X-ray diffraction differential thermal analysis. Density (ρ) was found to decrease with increasing average nanocrystallite size as molar volume increases. Studies on thermoelectric power have been carried out. nanocomposite after h heating exhibits significant improvement electrical conductivity. activation energy (W), polaron radius (r p ) other parameters estimated in non-adiabatic region. current–voltage (I–V) curve each measured. A temporal analysis current & voltage nonlinear I–V curves show pinched hysteresis loop, which memristor’s fingerprint. a large switching window. results study enable us predict that they will be helpful for future applications non-volatile electronic-memory devices.

Language: Английский

Citations

3