Study on the properties of MoS2 thin films and devices prepared under different annealing pressures DOI
Zhiping Huang,

Xiaoqian Yang,

Lukai Zhang

et al.

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal Year: 2025, Volume and Issue: 43(4)

Published: May 16, 2025

MoS2, characterized by its tunable bandgap, high optical absorption coefficient, and excellent carrier mobility, demonstrates outstanding performance in photoelectric semiconductor devices. This study addresses the high-density defect distribution typically found MoS2 thin films prepared employing a gate-assisted magnetron sputtering method combined with postannealing. The effects of various annealing pressures on microstructure electrical properties were systematically investigated. It was observed that an appropriate increase pressure enhances crystallinity while reducing interface recombination At 150 Pa, high-quality, compositionally pure optimal obtained, exhibiting resistivity 16.1 Ω cm Hall mobility 682.5 cm2/(V s). Furthermore, modulation to significantly improve MoS2/SnO2/p-Si heterojunction solar cells. Under device achieved notable enhancement metrics, including open-circuit voltage (Voc) 344 mV, short-circuit current density (Jsc) 33 mA/cm2, fill factor 57%, power conversion efficiency 6.02%. external quantum reached 90.7%. devices also exhibited rectification behavior, ratio 7.58 × 103 ideality (n) 1.062.

Language: Английский

Innovative Nb-Doped SnO2 Electron Transport Layers Prepared by Atomic Layer Deposition for Enhanced Perovskite Solar Cells DOI
Getaneh Diress Gesesse, Marion Provost,

Armelle Yaïche

et al.

ACS Applied Energy Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 11, 2025

Language: Английский

Citations

0
Study on the properties of MoS2 thin films and devices prepared under different annealing pressures DOI
Zhiping Huang,

Xiaoqian Yang,

Lukai Zhang

et al.

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal Year: 2025, Volume and Issue: 43(4)

Published: May 16, 2025

MoS2, characterized by its tunable bandgap, high optical absorption coefficient, and excellent carrier mobility, demonstrates outstanding performance in photoelectric semiconductor devices. This study addresses the high-density defect distribution typically found MoS2 thin films prepared employing a gate-assisted magnetron sputtering method combined with postannealing. The effects of various annealing pressures on microstructure electrical properties were systematically investigated. It was observed that an appropriate increase pressure enhances crystallinity while reducing interface recombination At 150 Pa, high-quality, compositionally pure optimal obtained, exhibiting resistivity 16.1 Ω cm Hall mobility 682.5 cm2/(V s). Furthermore, modulation to significantly improve MoS2/SnO2/p-Si heterojunction solar cells. Under device achieved notable enhancement metrics, including open-circuit voltage (Voc) 344 mV, short-circuit current density (Jsc) 33 mA/cm2, fill factor 57%, power conversion efficiency 6.02%. external quantum reached 90.7%. devices also exhibited rectification behavior, ratio 7.58 × 103 ideality (n) 1.062.

Language: Английский

Citations

0