Fabrication of high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer DOI Creative Commons
Jiahui Li,

Wenhao Meng,

Zhanren Wang

et al.

Optics Express, Journal Year: 2024, Volume and Issue: 32(27), P. 48858 - 48858

Published: Dec. 8, 2024

We present a high-performance Ge/Si PIN photodetector that leverages the advanced hetero-bonding method. The sputtered microcrystalline Ge is utilized as interlayer, in conjunction with Smart-Cut technology, to fabricate high-quality Si-based films. exfoliated film exhibits surface roughness of 0.196 nm and full width at half maximum XRD peak merely 70 arcseconds, which much lower than epitaxial ones. photodetectors based on films are systematically optimized analyzed, particular emphasis effects crystal quality interlayer thickness device performance. 2 nm-thick demonstrates dark current density 32.8 mA/cm2 bias -1 V, accompanied by an ideality factor low 1.33. At wavelength 1310 nm, achieves responsivity 0.61 A/W, devices featuring 13 µm-diameter mesa exhibited high 3 dB bandwidth 24.3 GHz. technology effectively facilitates integration onto Si platforms, offering substantial potential for diverse array applications.

Language: Английский

In Situ Construction of Flexible Low‐Dimensional van der Waals Material Photodetectors DOI Creative Commons
Yu Chen,

Huanrong Liang,

Xinyi Guan

et al.

Advanced Physics Research, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 21, 2025

Abstract By virtue of the excellent flexibility, conformability, portability, and aesthetics, wearable photodetectors have attracted worldwide research enthusiasm over past decade. However, traditional bulk covalent semiconductors are difficult to be applied due their pronounced rigidity. Profiting from self‐passivated surface, carrier mobility, strong light‐harvesting ability, low‐dimensional van der Waals materials (LDvdWMs) shown immense potential for application in optoelectronic devices. Nevertheless, preparation flexible through exfoliation/transfer or solution methods has suffered severe drawbacks spanning low production yield, contamination, uncompetitive device properties. Therefore, researchers been committed exploring alternative strategies. In response this, current review systematically summarizes latest advancements directly constructing LDvdWM on substrates, including developing low‐melting‐point targeted materials, electron‐beam‐enabled crystallization, photonic modified chemical vapor deposition, pulsed‐laser with elaboration fundamental mechanisms enabling situ deposition LDvdWMs. Finally, tricky challenges standing way this field epitomized solutions addressing them proposed. On whole, underscores distinctive pathways development photodetectors, which probably usher next‐generation technologies.

Language: Английский

Citations

0
Coupling Strategies of Multi‐Physical Fields in 2D Materials‐Based Photodetectors DOI Open Access
Ruofei Xing, Xinglong Zhang,

Xueshuo Fan

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 9, 2025

2D materials possess exceptional carrier transport properties and mechanical stability despite their ultrathin nature. In this context, the coupling between polarization fields photoelectric has been proposed to modulate physical of materials, including energy band structure, mobility, as well dynamic processes photoinduced carriers. These strategies have led significant improvements in performance, functionality, integration density -based photodetectors. The present review introduces field with four fundamental fields, delivered from dielectric, piezoelectric, pyroelectric, ferroelectric effects, focusing on synergistic mechanisms, distinctive properties, technological merits advanced photodetection applications. More importantly, it sheds light new path material synthesis novel structure design improve efficiency Then, research advances synergy multi-polarization effects effect domain bionic photodetectors are highlighted. Finally, outlines future perspectives materials-based proposes potential solutions address challenges issues area. This comprehensive overview will guide futural applied that capitalizes for sensitive intelligent photodetection.

Language: Английский

Citations

0
Recent progress in ultraviolet photodetectors based on low-dimensional materials DOI
Vijay Laxmi, Yudi Tu, Deepika Tyagi

et al.

Nanoscale, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

UV photodetectors utilizing 0D, 1D, and 2D materials heterostructures, enable high responsivity fast response times. Their integration enhances charge transport, minimizes dark current, improves sensing for advanced optoelectronics.

Language: Английский

Citations

0
New paradigms of 2D layered material self-driven photodetectors DOI
Xinyi Guan, Yu Chen, Yuhang Ma

et al.

Nanoscale, Journal Year: 2024, Volume and Issue: unknown

Published: Jan. 1, 2024

The burgeoning initiatives implementing self-driven 2D layered material photodetectors have been presented, heralding new avenues for the next-generation integrated and miniaturized optoelectronic industry.

Language: Английский

Citations

3
Performance improvement of GaAsSb/InGaAs DQW heterostructure by uni- and bi-axial pressure and field for IR-photodetector application DOI
Wahid Ali, A.M. Quraishi, Mohammad Ehtisham Khan

et al.

Physica B Condensed Matter, Journal Year: 2024, Volume and Issue: unknown, P. 416853 - 416853

Published: Dec. 1, 2024

Language: Английский

Citations

1
Fabrication of high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer DOI Creative Commons
Jiahui Li,

Wenhao Meng,

Zhanren Wang

et al.

Optics Express, Journal Year: 2024, Volume and Issue: 32(27), P. 48858 - 48858

Published: Dec. 8, 2024

We present a high-performance Ge/Si PIN photodetector that leverages the advanced hetero-bonding method. The sputtered microcrystalline Ge is utilized as interlayer, in conjunction with Smart-Cut technology, to fabricate high-quality Si-based films. exfoliated film exhibits surface roughness of 0.196 nm and full width at half maximum XRD peak merely 70 arcseconds, which much lower than epitaxial ones. photodetectors based on films are systematically optimized analyzed, particular emphasis effects crystal quality interlayer thickness device performance. 2 nm-thick demonstrates dark current density 32.8 mA/cm2 bias -1 V, accompanied by an ideality factor low 1.33. At wavelength 1310 nm, achieves responsivity 0.61 A/W, devices featuring 13 µm-diameter mesa exhibited high 3 dB bandwidth 24.3 GHz. technology effectively facilitates integration onto Si platforms, offering substantial potential for diverse array applications.

Language: Английский

Citations

0