Journal of Solid State Chemistry, Journal Year: 2024, Volume and Issue: unknown, P. 125157 - 125157
Published: Dec. 1, 2024
Language: Английский
Journal of Solid State Chemistry, Journal Year: 2024, Volume and Issue: unknown, P. 125157 - 125157
Published: Dec. 1, 2024
Language: Английский
Materials Science in Semiconductor Processing, Journal Year: 2025, Volume and Issue: 189, P. 109299 - 109299
Published: Jan. 18, 2025
Language: Английский
Citations
4Coordination Chemistry Reviews, Journal Year: 2025, Volume and Issue: 529, P. 216433 - 216433
Published: Jan. 13, 2025
Language: Английский
Citations
3Journal of Materials Chemistry A, Journal Year: 2024, Volume and Issue: unknown
Published: Jan. 1, 2024
To promote the fast separation of photogenerated charge carriers and stability, we designed core–shell TiO 2 –SnS/SnS heterostructures with enriched oxygen-related defect states without compromising their morphology.
Language: Английский
Citations
8Journal of Catalysis, Journal Year: 2025, Volume and Issue: unknown, P. 116087 - 116087
Published: March 1, 2025
Language: Английский
Citations
1Environmental Nanotechnology Monitoring & Management, Journal Year: 2025, Volume and Issue: unknown, P. 101065 - 101065
Published: April 1, 2025
Language: Английский
Citations
1Optical Materials, Journal Year: 2025, Volume and Issue: unknown, P. 116732 - 116732
Published: Jan. 1, 2025
Language: Английский
Citations
0Materials Science in Semiconductor Processing, Journal Year: 2025, Volume and Issue: 190, P. 109338 - 109338
Published: Jan. 31, 2025
Language: Английский
Citations
0Journal of Sol-Gel Science and Technology, Journal Year: 2025, Volume and Issue: unknown
Published: Feb. 26, 2025
Language: Английский
Citations
0Next Materials, Journal Year: 2025, Volume and Issue: 8, P. 100579 - 100579
Published: March 8, 2025
Language: Английский
Citations
0ACS Nano, Journal Year: 2025, Volume and Issue: unknown
Published: March 15, 2025
Tin disulfide (SnS2), a layered material analogous to two-dimensional transition metal dichalcogenides (TMDs), demonstrates excellent photoresponse capabilities. However, the relatively large dark current in multilayer SnS2 photodetectors limits their potential high-performance photodetection. To address this issue, we introduce lead (Pb)-based halide perovskites as suppression layers for photodetector. Specifically, evaluate effects of short- and long-chain organic molecules outside perovskite octahedral structure [PbI6]4–, three-dimensional cesium-doped formamidinium trihalide (FA0.9Cs0.1PbI3) phenylethylammonium iodide ((PEA)2PbI4) were selected layers, significantly suppressing while enhancing device's light on/off ratio specific detectivity. Results show that, compared original photodetector, proposed device achieves 5-order magnitude reduction (down ∼ 10 pA level), 150-fold increase ratio, 20-fold improvement response speed, 4-fold enhancement Additionally, also exhibits notable self-powered photodetection capabilities (operating at 0 V bias). Evidently, innovative approach applying thin Pb-based layer onto TMD-like materials offers promising route develop with low current.
Language: Английский
Citations
0