The Numerical Simulation of a Non-Fullerene Thin-Film Organic Solar Cell with Cu2FeSnS4 (CFTS) Kesterite as a Hole Transport Layer Using SCAPS-1D DOI Open Access
Edson L. Meyer,

Sindisiwe Jakalase,

Azile Nqombolo

et al.

Coatings, Journal Year: 2025, Volume and Issue: 15(3), P. 266 - 266

Published: Feb. 23, 2025

Global warming and environmental pollution due to the overuse exploitation of fossil fuels are main issues affecting humans’ well-being. Solar energy is considered be one most promising candidates for providing human society with a clean sustainable supply. Thin-film organic solar cells (TFOSCs) use semiconductors as light-absorbing layer materials. TFOSCs have attracted wide research interest several advantages, such easy fabrication, affordability, light weight, friendliness. Over years, been dominated by donor–acceptor blends based on polymer donors fullerene acceptors. However, new class non-fullerene acceptors (NFAs) has gained prominence in owing their significant improvement power conversion efficiency (PCE) non-fullerene-based devices. In this study, One-Dimensional Cell Capacitance Simulator (SCAPS-1D) numerical simulator was used study performance device configuration FTO/PDINO/PBDB-T/ITIC/CFTS/Al. Here, PBDB-T/ITIC blend represents poly[(2,6-(4,8-bis(5-(2 ethylhexyl)thiophen-2-yl)benzo [1,2-b:4,5-b]dithiophene)-co-(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl)benzo [1,2-c:4,5-c]dithiophene-4,8-dione)] (PBDB)/3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone)-5,5,11,11-tetraki(4-hexylphenyl)-dithieno[2,3-d:2,3-d]-s-indaceno [1,2-b:5,6-b]dithiophene) (ITIC) acceptor (NFA) serves absorber layer. The electron transport (ETL) 2,9-Bis[3-(dimethyloxidoamino)propyl]anthra[2,1,9-def:6,5,10-d’e’f’]diisoquinoline-1,3,8,10(2H,9H)-tetrone (PDINO), Cu2FeSnS4 (CFTS) hole (HTL). This article aims address global challenges caused exploring alternative solutions. Upon optimization, achieved 16.86%, fill factor (FF) 79.12%, short-circuit current density (JSC) 33.19 mA cm−2, an open-circuit voltage (VOC) 0.64 V. results obtained can guide fabrication NFA-based near future.

Language: Английский

Unlocking Stability and Efficiency in Double Inorganic Halide Perovskite Cs2KMoX6 (X = Cl, I) Materials Through First Principles Study DOI

Masoofa Akhtar,

Mubashir Nazar, Muhammad Sajid

et al.

Journal of Inorganic and Organometallic Polymers and Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 20, 2025

Language: Английский

Citations

0
The Numerical Simulation of a Non-Fullerene Thin-Film Organic Solar Cell with Cu2FeSnS4 (CFTS) Kesterite as a Hole Transport Layer Using SCAPS-1D DOI Open Access
Edson L. Meyer,

Sindisiwe Jakalase,

Azile Nqombolo

et al.

Coatings, Journal Year: 2025, Volume and Issue: 15(3), P. 266 - 266

Published: Feb. 23, 2025

Global warming and environmental pollution due to the overuse exploitation of fossil fuels are main issues affecting humans’ well-being. Solar energy is considered be one most promising candidates for providing human society with a clean sustainable supply. Thin-film organic solar cells (TFOSCs) use semiconductors as light-absorbing layer materials. TFOSCs have attracted wide research interest several advantages, such easy fabrication, affordability, light weight, friendliness. Over years, been dominated by donor–acceptor blends based on polymer donors fullerene acceptors. However, new class non-fullerene acceptors (NFAs) has gained prominence in owing their significant improvement power conversion efficiency (PCE) non-fullerene-based devices. In this study, One-Dimensional Cell Capacitance Simulator (SCAPS-1D) numerical simulator was used study performance device configuration FTO/PDINO/PBDB-T/ITIC/CFTS/Al. Here, PBDB-T/ITIC blend represents poly[(2,6-(4,8-bis(5-(2 ethylhexyl)thiophen-2-yl)benzo [1,2-b:4,5-b]dithiophene)-co-(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl)benzo [1,2-c:4,5-c]dithiophene-4,8-dione)] (PBDB)/3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone)-5,5,11,11-tetraki(4-hexylphenyl)-dithieno[2,3-d:2,3-d]-s-indaceno [1,2-b:5,6-b]dithiophene) (ITIC) acceptor (NFA) serves absorber layer. The electron transport (ETL) 2,9-Bis[3-(dimethyloxidoamino)propyl]anthra[2,1,9-def:6,5,10-d’e’f’]diisoquinoline-1,3,8,10(2H,9H)-tetrone (PDINO), Cu2FeSnS4 (CFTS) hole (HTL). This article aims address global challenges caused exploring alternative solutions. Upon optimization, achieved 16.86%, fill factor (FF) 79.12%, short-circuit current density (JSC) 33.19 mA cm−2, an open-circuit voltage (VOC) 0.64 V. results obtained can guide fabrication NFA-based near future.

Language: Английский

Citations

0