Regulation of Intrinsic Defects of Self‐Activated MgGa2O4 Phosphors for Temperature Dynamic Anti‐Counterfeiting DOI
Guohao Wang,

Ting Wang,

Yang Yue

et al.

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 3, 2024

Abstract Photoluminescent (PL) anti‐counterfeiting plays a critical role in encrypted information and anti‐counterfeiting. Dynamic PL technology provides advanced security features compared with static counterparts. Yet, many current dynamic luminescent materials rely solely on an optical storage mechanism, leading to lack of diversification making them vulnerable replication. Here, emission triggered by ambient temperature variations is addressed. By modifying the sintering atmospheres non‐stoichiometric ratio MgGa 2 O 4 (MGO) samples, concentration intrinsic defects host are modified, resulting temperature‐sensitive output dynamically manipulated from blue green red. Density‐functional theory (DFT) analysis elucidates formation energies MGO revealing that self‐activated blue, green, red emissions stem lattice defects, [GaO 6 ], antisite , interstitial oxygen (), respectively. Additionally, monitoring luminescence lifetime, thermoluminescence (TL) curves it shown generated combination thermally assisted carrier migration thermal compensation trapping centers. Herein, dual‐channel dot matrix designed enhance transfer through interference between dual channels, showcasing practical application this technique.

Language: Английский

Near-infrared mechanoluminescence from Sr3Sn2O7:Nd3+ for potential bioimaging and non-destructive detection DOI Creative Commons

Yafen Wu,

Sheng Wu, Puxian Xiong

et al.

Journal of Rare Earths, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Language: Английский

Citations

2
Local electric field-induced mechanoluminescence caused by disordered occupation of Mg2+ and Ga3+: Tunable luminescence performance and its applications DOI
Mingxin Zhou, Panlai Li, Xue Meng

et al.

Chemical Engineering Journal, Journal Year: 2025, Volume and Issue: 505, P. 159500 - 159500

Published: Jan. 11, 2025

Language: Английский

Citations

1
Broadband near-infrared phosphor SrGe4O9:Cr3+ for NIR-pc-LED applications DOI

Haixia Zheng,

Zhongxiang Shao,

Faling Ling

et al.

Ceramics International, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 1, 2025

Language: Английский

Citations

0
Broadband Near-Infrared Long Persistent Luminescence in Cr3+-Doped CaY2Ga4GeO12 Phosphors for Advanced Light Source Applications DOI
Yan Zhang, Yue Ba, Jialu Wang

et al.

Ceramics International, Journal Year: 2025, Volume and Issue: unknown

Published: April 1, 2025

Language: Английский

Citations

0
Regulating the redshift of the charge transfer band edge and antithermal quenching by ion substitution strategy in YP1-xVxO4:Eu3+ phosphor DOI
R. Liu, Chunwei Yang, Jianxia Liu

et al.

Ceramics International, Journal Year: 2024, Volume and Issue: 50(21), P. 43171 - 43181

Published: Aug. 12, 2024

Language: Английский

Citations

3
Differential substitution of Ga3+ by Mn2+ and Cr3+ in LiGa5O8 to prepare multi-mode fluorescent materials as array elements for anti-counterfeiting DOI
Siyu Lu,

Jian Wang,

Qi Zhu

et al.

Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: 1003, P. 175567 - 175567

Published: July 15, 2024

Language: Английский

Citations

2
Photoluminescence study of MgGa2O4 spinel oxide films grown by molecular beam epitaxy DOI
Tianchen Yang, Chengyun Shou, Jason Tran

et al.

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 125(7)

Published: Aug. 12, 2024

As a promising ultrawide bandgap oxide semiconductor material in the spinel family, magnesium gallate (MgGa2O4) exhibits great potential applications power electronics, transparent and deep ultraviolet optoelectronics. However, few studies reveal its photoluminescence (PL) properties. In this work, MgGa2O4 films were grown by using oxygen plasma assisted molecular beam epitaxy. The of is determined to be around 5.4–5.5 eV, all samples have transmittance over 90% visible spectral range. X-ray diffraction patterns confirmed that highly along ⟨111⟩ oriented. Power temperature dependent PL investigated. Optical transitions involving self-trapped hole, vacancy donor, atom on gallium site acceptor levels revealed.

Language: Английский

Citations

1
An energy transfer strategy towards versatile sensing applications from Cr3+ and Yb3+ codoped near infrared phosphors DOI

Guocheng Pan,

Yiheng Yue,

Jianfeng Wang

et al.

Materials Today Chemistry, Journal Year: 2024, Volume and Issue: 40, P. 102216 - 102216

Published: July 24, 2024

Language: Английский

Citations

0
Regulation of Intrinsic Defects of Self‐Activated MgGa2O4 Phosphors for Temperature Dynamic Anti‐Counterfeiting DOI
Guohao Wang,

Ting Wang,

Yang Yue

et al.

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 3, 2024

Abstract Photoluminescent (PL) anti‐counterfeiting plays a critical role in encrypted information and anti‐counterfeiting. Dynamic PL technology provides advanced security features compared with static counterparts. Yet, many current dynamic luminescent materials rely solely on an optical storage mechanism, leading to lack of diversification making them vulnerable replication. Here, emission triggered by ambient temperature variations is addressed. By modifying the sintering atmospheres non‐stoichiometric ratio MgGa 2 O 4 (MGO) samples, concentration intrinsic defects host are modified, resulting temperature‐sensitive output dynamically manipulated from blue green red. Density‐functional theory (DFT) analysis elucidates formation energies MGO revealing that self‐activated blue, green, red emissions stem lattice defects, [GaO 6 ], antisite , interstitial oxygen (), respectively. Additionally, monitoring luminescence lifetime, thermoluminescence (TL) curves it shown generated combination thermally assisted carrier migration thermal compensation trapping centers. Herein, dual‐channel dot matrix designed enhance transfer through interference between dual channels, showcasing practical application this technique.

Language: Английский

Citations

0