From synthesis to application: a review of BaZrS₃ chalcogenide perovskites

Nanoscale, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Chalcogenide perovskites are gaining prominence as earth-abundant and non-toxic solar absorber materials, crystallizing in a distorted perovskite structure. Among these, BaZrS3 has attracted the most attention due to its optimal bandgap ability be synthesized at relatively low temperatures. exhibits high light absorption coefficient, excellent stability under exposure air, moisture, heat, is composed of elements. These properties collectively position promising candidate for wide range applications, although traditional high-temperature synthesis primarily been significant challenge. In this review, we provide critical discussion various methods employed fabricate BaZrS3, including solid-state synthesis, nanoparticle vacuum-based well solution-based approaches synthesize thin films. We also comprehensively examine experimentally measured theoretically calculated optical, optoelectronic, electronic, defect BaZrS3. Furthermore, review highlights functional devices based on showcasing applications spanning photovoltaics, photodetection, thermoelectrics, photoelectrochemical water splitting, piezoelectricity, spintronics. Lastly, propose future roadmap maximize potential material. Additionally, extends focus BaHfS3 BaTiS3, discussing their methods, properties, explored thereby offering comparative perspective emerging family chalcogenide perovskites.

Language: Английский

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Assessing Carrier Mobility, Dopability, and Defect Tolerance in the Chalcogenide Perovskite BaZrS3

PRX Energy, Journal Year: 2024, Volume and Issue: 3(3)

Published: Sept. 30, 2024

The chalcogenide perovskite BaZrS3 has attracted much attention as a promising solar absorber for thin-film photovoltaics. Here we use first-principles calculations to evaluate its carrier transport and defect properties. We find that BaZrS3 phonon-limited electron mobility of 37cm2/V s, which is comparable in halide perovskites, but lower hole 11cm2/V s. computations indicate BaZrS3 intrinsically n-type due shallow sulfur vacancies, strong compensation by vacancies will prevent attempts make it p-type. also establish BaZrS3 shows some degree tolerance, presenting only few low formation energy, deep intrinsic defects. Among the defects, interstitials are dominant nonradiative recombination centers exhibit moderate capture coefficient. Our work highlights material’s limitations p-type doping, suggests focusing on suppressing achieve longer lifetime. Published American Physical Society 2024

Language: Английский

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Engineering BaHfS3 with Zr alloying to improve solar cell performance: Insights from SCAPS-1D simulations

Materials Science and Engineering B, Journal Year: 2025, Volume and Issue: 315, P. 118126 - 118126

Published: Feb. 17, 2025

Language: Английский

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Emergence of Ruddlesden-Popper Phases and Other Pitfalls for Moderate Temperature Solution Deposited Chalcogenide Perovskites

Materials Chemistry Frontiers, Journal Year: 2024, Volume and Issue: 8(20), P. 3358 - 3372

Published: Jan. 1, 2024

This work highlights the challenges of weak photoluminescence, limited choice substrates, unwanted impurity phases, and Ruddlesden–Popper phases in moderate-temperature synthesized chalcogenide perovskites.

Language: Английский

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Quantitative Scales for Haliphilicity of Metals: Tailoring the Halide Affinity of Alkaline Earth Metals to Synthesize Chalcogenide Perovskite BaMS₃ (M = Zr, and Hf) and Cu₂BaSnS₄ Compounds

ACS Applied Energy Materials, Journal Year: 2024, Volume and Issue: 7(22), P. 10584 - 10595

Published: Nov. 7, 2024

Chalcogenide semiconductors, such as BaMS3 (M = Zr and Hf) Cu2BaSnS4, have attracted growing interest due to the constituent elements' abundance reported promising properties. However, synthesis of these alkaline earth-containing chalcogenides from commonly available metal halides has generally been unsuccessful traditionally relied on expensive organometallic precursors or vacuum processing techniques, which hinder widespread research materials. In this study, we conducted thermodynamic calculations developed chloriphilicity iodiphilicity scales for various metals, leveraging their relative affinities chlorine iodine, respectively, compared corresponding sulfides. Utilizing scales, introduced a K2S–H2S system address affinity earth metals iodine. This approach enables intriguing chalcogenide materials through solution-based methods using chloride iodide precursors. demonstrates remarkable efficacy both sulfide selenide semiconductors.

Language: Английский

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A Reliable, Colloidal Synthesis Method of the Orthorhombic Chalcogenide Perovskite, BaZrS₃, and Related ABS₃ Nanomaterials (A = Sr, Ba; B = Ti, Zr, Hf): A Step Forward for Earth-Abundant, Functional Materials

Chemical Science, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 11, 2024

Chalcogenide perovskites have become of interest for their increased stability, compared to halide counterparts, and potential optoelectronic properties. A reliable colloidal method is presented here BaZrS 3 related ABS nanomaterials.

Language: Английский

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